marking 702
Abstract: MTN7002N3 n-channel mosfet SOT-23
Text: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2007.12.12 Page No. : 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D G S G：Gate S：Source
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C325N3
MTN7002N3
MTN7002N3
OT-23
UL94V-0
marking 702
n-channel mosfet SOT-23
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Untitled
Abstract: No abstract text available
Text: TSM3401 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 60 @ VGS = 10V -3.0 90 @ VGS = 4.5V -2.0 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM3401
OT-23
TSM3401CX
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mosfet 23 Tsop-6
Abstract: IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET IRLMS6802TRPBF P-channel HEXFET Power MOSFET
Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: IRLMS6802TRPBF Description: -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 Micro 6 package Support Docs: Datasheet Spice File Saber File Reliability Report Cross Reference IR Part #
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IRLMS6802TRPBF
IRLTS2242TRPBF
IRLML2244TRPBF
OT-23
IRLMS6802TRPBF
IRLMS6802TR
mosfet 23 Tsop-6
IRLML2244TR
power MOSFET reliability report
TSOP-6 Marking
IRLML2244
marking 43A sot23
MOSFET reliability report
Cross Reference power MOSFET
P-channel HEXFET Power MOSFET
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Untitled
Abstract: No abstract text available
Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = +25°C • Low On-Resistance Low Gate Threshold Voltage 60V 3Ω @ VGS = 10V 300mA Low Input Capacitance Fast Switching Speed Description
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2N7002E
300mA
AEC-Q101
DS30376
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MTN7002N3
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 N-CHANNEL MOSFET MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline MTN7002N3 SOT-23
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C325N3
MTN7002N3
MTN7002N3
OT-23
UL94V-0
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Untitled
Abstract: No abstract text available
Text: DMN30H4D0L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low Gate Threshold Voltage Low Input Capacitance 4Ω @ VGS = 10V 0.25A Fast Switching Speed 0.25A Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMN30H4D0L
AEC-Q101
DS36313
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Untitled
Abstract: No abstract text available
Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A Fast Switching Speed 4.3A Low Input/Output Leakage ESD Protected Up To 3kV Description
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DMP1045U
AEC-Q101
DS35051
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Untitled
Abstract: No abstract text available
Text: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance Low Gate Threshold Voltage 38mΩ @ VGS = -10V 5.8A Low Input Capacitance 4.5A Fast Switching Speed V(BR)DSS 64mΩ @ VGS = -4.5V Low Input/Output Leakage
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DMN3051L
AEC-Q101
DS31347
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Untitled
Abstract: No abstract text available
Text: DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) max -30V 77mΩ@ VGS = -10V 95mΩ@ VGS = -4.5V 150mΩ@ VGS = -2.5V • ID TA = 25°C -3.5A -3.0A -2.4A Description and Applications
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DMP3130L
AEC-Q101
DS31524
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P-CHANNEL -30V -4A
Abstract: IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF
Text: PD - 96029A IRF5800PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free A D D 1 6 D 2 5 D G 3 4 S Description VDSS = -30V RDS on = 0.085Ω Top View
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6029A
IRF5800PbF
OT-23.
IRF5800TRPBF
IRF5800TR
12-Jul-2012
P-CHANNEL -30V -4A
IRFTS9342TRPBF
mosfet 23 Tsop-6
IRLML9301TR
IRFTS9342
IRF5800TRPBF
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8853-DS-26
FS8853
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dc dc step down sot23-5
Abstract: marking B3 sot23-5 CM3018 CM3018-15ST CM3018-18ST CM3018-25ST CM3018-28ST CM3018-29ST CM3018-30ST CM3018-31ST
Text: CM3018 Micropower, 150mA Low Noise CMOS Regulator with Fast Response Features Product Description • The CM3018 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. Available with 1.5V, 1.8V, 2.5V, 2.6V, 2.8V, 2.85V,
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CM3018
150mA
CM3018
150mV
150mA)
178mm
dc dc step down sot23-5
marking B3 sot23-5
CM3018-15ST
CM3018-18ST
CM3018-25ST
CM3018-28ST
CM3018-29ST
CM3018-30ST
CM3018-31ST
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FS8853-33PL
Abstract: FS8853 Transistor PNP 40V 0.6A SOT-23 333C exfs8853 FS8853-xxxL p-channel mosfet sot-89 p-channel mosfet sot89 5V FORTUNE SEMICONDUCTOR
Text: FS8853 300 mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an
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FS8853
FS8853-xx
FS8853
300mA
100mV
FS8853-29Cx
OT-23
OT-89
FS8853-33PL
Transistor PNP 40V 0.6A SOT-23
333C
exfs8853
FS8853-xxxL
p-channel mosfet sot-89
p-channel mosfet sot89 5V
FORTUNE SEMICONDUCTOR
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Untitled
Abstract: No abstract text available
Text: REV. 2.1 FS8853-DS-21_EN Datasheet FS8853 300 mA LDO Linear Regulator SEP 2006 FS8853 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874
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FS8853-DS-21
FS8853
FS8853
OT-23
OT-89
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FS8853
Abstract: XXXW
Text: FS8853 300mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an
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FS8853
300mA
FS8853-xx
FS8853
100mV
FS8853-29Cx
OT-23
XXXW
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Untitled
Abstract: No abstract text available
Text: FS8854 350mA LDO Linear Regulator General Description Ordering Information The FS8854 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 350mA output current. FS8854-xx x x Package A : SOT-23 B : SOT-23
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FS8854
350mA
FS8854
FS8854-xx
OT-23
OT-89
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LINEAR REGULATOR sot-89
Abstract: FS8853 FS8853-33PL LDO MARKING
Text: FS8853 300mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an
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FS8853
300mA
FS8853-xx
FS8853
100mV
FS8853-29Cx
OT-23
LINEAR REGULATOR sot-89
FS8853-33PL
LDO MARKING
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8853-DS-24
FS8853
FS8853
OT-23
OT-89
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Untitled
Abstract: No abstract text available
Text: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,
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FS8853-DS-23
FS8853
FS8853
OT-23
OT-89
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hf5710-01-b-a12 pinout
Abstract: BA12 BB12 CM3102 CM3102-12SO CM3102-12ST MIC5258 MO-178
Text: CM3102 Micropower 1.2V/150mA CMOS LDO Regulator with Power Good Features Product Description • • • • • • • • • • • The CM3102 is a low quiescent current 90uA regulator that delivers up to 150mA of load current at a fixed 1.2V output. In addition, the CM3102 features a Power
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CM3102
V/150mA
CM3102
150mA
OT23-5
MIC5258"
OT23-5.
hf5710-01-b-a12 pinout
BA12
BB12
CM3102-12SO
CM3102-12ST
MIC5258
MO-178
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.
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LND250
OT-23:
O-236AB*
LND250K1
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marking A07
Abstract: TSM2323
Text: TAIWAN E SEMICONDUCTOR TSM2323 20V P-Channei MOSFET pb RoHS C O M P L IA N C E PRODUCT SUMMARY SOT-23 V DS (V) P in D e fin itio n : 1. Gate 1 2. Source 3. Drain 2 -20 RDS(on>(mO) Id (A) 39 @ Vgs - -4.5V -4.7 52 @ Vqs = -2.5V -4.1 63 @ VCS = -1.8V -2.0 Features
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TSM2323
OT-23
TSM2323CX
OT-23
marking A07
TSM2323
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mosfet marking code AL sot-23
Abstract: p-channel sot-23 .5A TSM3401CX 41YML ABV MARKING
Text: TAIWAN S SEMICONDUCTOR pb RoHS TSM3401 30V P-Channei MOSFET CO M PLIAN C E SOT-23 PRODUCT SUMMARY Pin Definition: 1. G a te -30 Features Advance Trench Proce s s Tech no logy • High Density Cell Design for Ultra Low On-resistance • PA Switch 60 @ VGS = 10V
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M3401
OT-23
TSM3401CX
OT-23
mosfet marking code AL sot-23
p-channel sot-23 .5A
41YML
ABV MARKING
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 1.7 A, 60 V. to improve the overall efficiency of DC/DC converters using Rds on = 0.100 £1 @ V GS = 10 V
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FDN5630
effi91
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