Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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JS SOT23-3
Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
JS SOT23-3
sot23 marking JR
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS19
BAS19LT1
BAS20
MARKING JS sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
BAS21/A/C/SLT1
BAS21LT1
BAS21ALT1
BAS21CLT1
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
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LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
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LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
236AB)
OT-23
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Untitled
Abstract: No abstract text available
Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing
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PJSLC05
IEC61000-4-2
IEC61000-4-5
OT-23,
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Diode SOT-23 marking Js
Abstract: DIODE JS4 Js SMD MARKING CODE SOT23 smd diode JS
Text: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E Fast switching speed Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant
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BAS21
225mW
OT-23
OT-23
MIL-STD-202,
Diode SOT-23 marking Js
DIODE JS4
Js SMD MARKING CODE SOT23
smd diode JS
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Js SMD MARKING CODE SOT23
Abstract: DIODE JS4 smd code marking js Js MARKING CODE SOT23 smd diode JS smd JS marking code js "MARKING CODE JS" JS3 SOT23 Diode marking CODE JS
Text: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E Fast switching speed Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant
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BAS21
225mW
OT-23
OT-23
MIL-STD-202,
Js SMD MARKING CODE SOT23
DIODE JS4
smd code marking js
Js MARKING CODE SOT23
smd diode JS
smd JS
marking code js
"MARKING CODE JS"
JS3 SOT23
Diode marking CODE JS
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Diode SOT-23 marking Js
Abstract: No abstract text available
Text: BAS19/BAS20 BAS21 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications
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BAS19/BAS20
BAS21
200mAMPERS
120-250VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
100mA
Diode SOT-23 marking Js
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BAS20
Abstract: sot23 marking JR bas21 js Diode SOT-23 marking J BAS19 BAS21 MARKING JS sot-23
Text: BAS19/BAS20 BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:
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BAS19/BAS20
BAS21
200mAMPERS
120-250VOLTS
OT-23
MIL-STD-202,
008grams
OT-23
00eristic
BAS20
sot23 marking JR
bas21 js
Diode SOT-23 marking J
BAS19
BAS21
MARKING JS sot-23
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LBAS21LT1G
Abstract: LBAS21LT1
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1 FETURE 3 • Pb-Free Package is available. 1 2 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value VR IF 250 Vdc 200 625 mAdc mAdc Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current
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LBAS21LT1
236AB)
LBAS21LT1-2/3
OT-23
LBAS21LT1-3/3
LBAS21LT1G
LBAS21LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G S-LBAS21LT1G FEATURE • We declare that the material of product compliance with 3 RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
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LBAS21LT1G
S-LBAS21LT1G
AEC-Q101
3000/Tape
LBAS21LT3G
S-LBAS21LT3G
10000/Tape
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BAP70-05
Abstract: No abstract text available
Text: BAP70-05 Silicon PIN diode Rev. 01 — 5 April 2004 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic package. 1.2 Features • High voltage; current controlled
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BAP70-05
sym027
BAP70-05
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13404
Abstract: PMBT3640
Text: PMBT3640 PNP 1 GHz switching transistor Rev. 03 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description PNP general purpose switching transistor in a SOT23 package. 1.2 Features • Volume delivery ■ Short lead times ■ Smallest packages.
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PMBT3640
sym013
13404
PMBT3640
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MARKING JS
Abstract: DIODE JS4 BAS21SLT1 BAS21CLT1 sot23 js marking DIODE JS DIODE JS 4 BAS21ALT1 BAS21LT1 Diode SOT-23 marking Js
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT-23 SWITCHING DIODE FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 250 V VR: Operating and storage junction temperature range
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OT-23
BAS21/A/C/SLT1
OT-23
BAS21LT1
BAS21ALT1
BAS21CLT1
BAS21SLT1
MARKING JS
DIODE JS4
BAS21SLT1
BAS21CLT1
sot23 js marking
DIODE JS
DIODE JS 4
BAS21ALT1
BAS21LT1
Diode SOT-23 marking Js
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marking code CM
Abstract: No abstract text available
Text: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.
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CMPS5061
CMPS5062
CMPS5063
CMPS5064
marking code CM
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DIODE MARKING code SM05
Abstract: marking code js 3 pin diode SURFACE MOUNT DIODE JS 8 TVS RS232 DIODE MARKING code M05 diode M15 TVS m05 Diode SOT-23 marking Js
Text: SM05 ¡OMnnMmi=D thru SM36 300 Watt Surface Mount TVS Diode TEL805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SM series of transient voltage suppressors are designed to protect components which are connected to data and transmission lines from over voltages caused
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TEL805-498-2111
DIODE MARKING code SM05
marking code js 3 pin diode
SURFACE MOUNT DIODE JS 8
TVS RS232
DIODE MARKING code M05
diode M15
TVS m05
Diode SOT-23 marking Js
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BAS40
Abstract: No abstract text available
Text: BAS40/ -04/ -05/ -06 VISHAY SURFACE MOUNT SCHO TTKY BARRIER DIODES /Li T E M I ri / POWERSEMICONDUCTOR I Features Low Turn-on Voltage Fast switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50
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BAS40/
OT-23,
MIL-STD-202,
OT-23
300ns,
DS11006
BAS40
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Js MARKING CODE SOT23
Abstract: sot23 marking JS v
Text: Central CMPP6027 CMPP6028 Sem iconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILI CON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur face mount SOT-23 package, designed for
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CMPP6027
CMPP6028
CMPP6027,
OT-23
05-September
Js MARKING CODE SOT23
sot23 marking JS v
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transistor p27
Abstract: 359 sot23 marking code 359 sot-23 transistor marking code p28 SOT-23 marking CC SOT-23 MARKING TR SOT23 sot23 js marking P27 pnp transistor t20 MARKING V0 sot23
Text: Central" CMPP6027 CMPP6028 Semiconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur face mount SOT-23 package, designed for
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CMPP6027
CMPP6028
CMPP6027,
OT-23
CP622
CP624
transistor p27
359 sot23
marking code 359 sot-23
transistor marking code p28 SOT-23
marking CC SOT-23
MARKING TR SOT23
sot23 js marking
P27 pnp
transistor t20
MARKING V0 sot23
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Untitled
Abstract: No abstract text available
Text: SL05 ¡OMnnMmi=D Low Capacitance 300 Watt Surface Mount TVS Diode thru SL24 TEL805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over
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TEL805-498-2111
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GL24
Abstract: marking code L05 SOT 23
Text: v G en e r a l S e m ic o n d u c t o r % GL05 thru GL24 Low Capacitance TVS Diode For High-Speed Data Interfaces TO-236AB SOT-23 Stand-off Voltage 5 to 24V Peak Pulse Power (8/20[js) 300W i •1 22 (3 .1) .110 2.8 Mounting Pad Layout .016(0.4) _ Ë Top View
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O-236AB
OT-23)
OT-23
E8-10K
8/20ns
8/20ps
GL24
marking code L05 SOT 23
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sot-23 Transistor MARKING CODE ZG
Abstract: ZG SOT23 transistor marking zg
Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-23
Q62702-F1298
sot-23 Transistor MARKING CODE ZG
ZG SOT23
transistor marking zg
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1207A
Abstract: No abstract text available
Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2339
OT-23
BE35b05
S35b05
fi235bD5
1207A
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