marking KD SOT23
Abstract: KTK5134S
Text: SEMICONDUCTOR KTK5134S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KD 1 2 Item Marking Description Device Mark KD KTK5134S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTK5134S
OT-23
marking KD SOT23
KTK5134S
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marking KD SOT23
Abstract: No abstract text available
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation Chopper Stabilized • Superior temperature stability
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AH1803
DFN2020-6
DFN2020-6:
AH1803
marking KD SOT23
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Untitled
Abstract: No abstract text available
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation Chopper Stabilized • Superior temperature stability
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AH1803
DFN2020-6
DFN2020-6
DFN2020-6:
AH1803
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4 pin hall marking code 6
Abstract: marking KD SOT23 AH1803 AH1803-SN AH1803-W DFN2020-6 SC59 circuit diagram of hall effect
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • AH1803 is with two Hall effect plates and a CMOS output driver, mainly designed for battery–operation, hand-held equipment such as Cellular and Cordless Phone, PDA . The total operation
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AH1803
AH1803
4 pin hall marking code 6
marking KD SOT23
AH1803-SN
AH1803-W
DFN2020-6
SC59
circuit diagram of hall effect
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marking KD SOT23
Abstract: DFN2020-6
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • AH1803 is with two Hall effect plates and a CMOS output driver, mainly designed for battery–operation, hand-held equipment such as Cellular and Cordless Phone, PDA . The total operation
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AH1803
DFN2020-6
DFN2020-6:
AH1803
marking KD SOT23
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DFN2020-6
Abstract: marking KD SOT23
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation Chopper Stabilized • Superior temperature stability
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AH1803
DFN2020-6
DFN2020-6:
AH1803
marking KD SOT23
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marking SA sot-23-5
Abstract: FP6811 marking D3G sot-23-5 FP6812-26CC8G FP6812-C 550 SOT143 FP6812 FP6811-31CSAG FP6811-29CS5G FP6809
Text: FP6811/6812 fitipower integrated technology lnc. Microprocessor Voltage Monitors with Manual Reset Description Features The FP6811 and FP6812 are cost-effective system supervisory circuits which are designed to monitor the power supply status in micro-processor P and
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FP6811/6812
FP6811
FP6812
140ms
FP6811-N
FP6811-C
FP6812-C
FP6811/6812-1
marking SA sot-23-5
marking D3G sot-23-5
FP6812-26CC8G
550 SOT143
FP6811-31CSAG
FP6811-29CS5G
FP6809
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Untitled
Abstract: No abstract text available
Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
-100mA
BC846/BC847/BC848/BC849
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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Untitled
Abstract: No abstract text available
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation Chopper Stabilized • Superior temperature stability
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AH1803
DFN2020-6
DFN2020-6:
AH1803
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k72 sot-23
Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS
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2N7002DW
OT-363
2N7002T
2SK3019
OT-523
2N7002KW
2N7002W
2SK3018
O-251
k72 sot-23
sot-23 Marking KN
72k SOT23
k72 r4
UM6K1
SI2302
SI2303
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Untitled
Abstract: No abstract text available
Text: OPA313 OPA2313 OPA4313 www.ti.com SBOS649C – SEPTEMBER 2012 – REVISED MARCH 2013 1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series Check for Samples: OPA313, OPA2313, OPA4313 FEATURES DESCRIPTION • • •
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OPA313
OPA2313
OPA4313
SBOS649C
OPA313,
OPA2313,
OPA313
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KTK5134S
Abstract: marking KD SOT23
Text: SEMICONDUCTOR KTK5134S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. E B L L D 1.5V.
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KTK5134S
KTK5134S
marking KD SOT23
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DFN2020-6
Abstract: marking code 10 sot23 AH1803 AH1803-SNG-7 SC59
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation Chopper Stabilized • Superior temperature stability
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AH1803
DFN2020-6
DFN2020-6
DFN2020-6:
AH1803
DS31193
marking code 10 sot23
AH1803-SNG-7
SC59
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AH1803
Abstract: AH1803-SNG-7 DFN2020-6 SC59
Text: AH1803 MICROPOWER, ULTRA-SENSITIVE HALL EFFECT SWITCH Please click here to visit our online spice models database. General Description Features • • • • • • • • • • Micropower operation Operation with North or South Pole 2.4 to 5.5V battery operation
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AH1803
DFN2020-6
DFN2020-6
DFN2020-6:
AH1803
DS31193
AH1803-SNG-7
SC59
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP
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Q62702-F1024
OT-23
EHP00610
flE35b05
EHP00612
235b05
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BC807-40LT1
Abstract: marking KD SOT23
Text: MAXIMUM RATINGS Rating Collector-Em itter V oltage Symbol Value Unit v CEO -4 5 V C ollector-Base V oltage VCBO -5 0 V Em itter-Base V oltage v EBO -5 .0 V 'c - 500 m Adc Collector Current — C o n tin u o u s BC807-16LT1 BC807-25LT1 BC807-40LT1 CASE 318-07, STYLE 6
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BC807-16LT1
BC807-25LT1
BC807-40LT1
OT-23
O-236AB)
BC807-25
BC807-40
BC807-40LT1
marking KD SOT23
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO -3 5 0 Vdc C o lle c to r-B a s e V o lta g e v CBO -3 5 0 Vdc E m itte r-B a se V o lta g e v EBO - 5 .0 Vdc B a se C urre n t >B -2 5 0 mA C o lle c to r C u rre n t — C o n tin u o u s
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OCR Scan
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PDF
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MMBT6520LT1*
OT-23
O-236AB)
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k2915
Abstract: SOT-23 marking l31 sot143 code marking l30 sot143 marking code 2c marking code 3h diode JW sot23 L30 SOT143 HSMS2850 hsms-285x JW SOT-23
Text: What HEWLETT* m L liM PACKARD Surface Mount Microwave Schottin Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|jW at 915 MHz up to 35 mV/|jW at 2.45 GHz
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HSMS-2850
HSMS-2860
OT-23/
OT-143
OT-23
5966-0928E,
k2915
SOT-23 marking l31
sot143 code marking l30
sot143 marking code 2c
marking code 3h diode
JW sot23
L30 SOT143
HSMS2850
hsms-285x
JW SOT-23
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BAT54c kl3 l43
Abstract: kl3 diode BAT54S KL4 marking KL sot-23 BAT54 BAT54A BAT54C BAT54S BAT54 kl3 kl4 diode
Text: BAT54 IA 1C IS VISHAY SURFACE MOUNT SCHOTTKY BARRIER DIODE LITEMZI y POWER SEMICONDUCTOR Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 \* -A -H u Mechanical Data_ Case: SO T-23, Molded Plastic
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PDF
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BAT54
OT-23,
MIL-STD-202,
OT-23
BAT54A
100nA
100mA
300ms,
DS11005
BAT54c kl3 l43
kl3 diode
BAT54S KL4
marking KL sot-23
BAT54C
BAT54S
BAT54 kl3
kl4 diode
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MMBTA92
Abstract: MMBTA93 MMBTA92.93 Korea Electronics TRANSISTOR
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA MMBTA92/93 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT MMBTA92 -300 Collector-Base V V CBO Voltage
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MMBTA92/93
MMBTA92
MMBTA93
-10mA,
100MHz
300juS,
MMBTA93
MMBTA92.93
Korea Electronics TRANSISTOR
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MMBD4148
Abstract: marking xa
Text: MMBD4148 SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 TB • • • Min Max A 0.37 0.51 C 1 Mechanical Data_
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MMBD4148
OT-23,
MIL-STD-202,
OT-23
150mA
DS12010
MMBD4148
marking xa
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marking kjd
Abstract: BAW56
Text: BAW56 r w \T ^ c c I N C O R P O R A T E DUAL SURFACE MOUNT SWITCHING DIODE D Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 •
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PDF
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BAW56
OT-23,
MIL-STD-202,
OT-23
BAW56
150mA
DS12008
marking kjd
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marking kje
Abstract: Diode SOT-23 marking JE Diode bav99 kje BAV99
Text: BAV99 r w \T ^ c c I N C O R P O R A T E DUAL SURFACE M OUNT SW ITCHING DIODE D Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance M echanical Data_
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OCR Scan
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PDF
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BAV99
OT-23,
MIL-STD-202,
OT-23
BAV99
150mA
DS12007
marking kje
Diode SOT-23 marking JE
Diode bav99 kje
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bd914lt
Abstract: bd914
Text: MMBD914LT1* M A XIM U M RATINGS Rating Symbol Unit V alue R everse V oltage Vr 70 Vdc Forw ard Current if 200 m Adc iFM surae 500 m Adc Symbol Max Unit Pd 225 mW 1.8 mW/°C R « JA 556 °C/W Pd 300 mW 2.4 mW/°C r öJ A 417 x/w TJ. T Stfl - 55 to + 1 5 0
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MMBD914LT1*
OT-23
O-236AB)
BD914LT1
bd914lt
bd914
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