KN3905S
Abstract: No abstract text available
Text: SEMICONDUCTOR KN3905S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZSA 1 2 Item Marking Description Device Mark ZSA KN3905S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KN3905S
OT-23
KN3905S
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ZCA SOT-23
Abstract: ZCA KN3904S ZCA SOT23 ZCA be KN3904S KN3904 zca sot 23
Text: SEMICONDUCTOR KN3904S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZCA 1 2 Item Marking Description Device Mark ZCA KN3904S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KN3904S
OT-23
ZCA SOT-23
ZCA KN3904S
ZCA SOT23
ZCA be
KN3904S
KN3904
zca sot 23
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ZAA SOT-23
Abstract: ZAA MARK KN3906S KN3906 ZAA SOT23
Text: SEMICONDUCTOR KN3906S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZAA 1 2 Item Marking Description Device Mark ZAA KN3906S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KN3906S
OT-23
ZAA SOT-23
ZAA MARK
KN3906S
KN3906
ZAA SOT23
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3906
Abstract: transistor 3906 KN3906 semiconductor 3906 marking KN
Text: SEMICONDUCTOR KN3906 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 3906 2 816 No. Item 3 Marking Description KN Series Name 3906 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week
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KN3906
3906
transistor 3906
KN3906
semiconductor 3906
marking KN
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3904
Abstract: KN3904 transistor 3904 3904 transistor Transistor 3904 Datasheet
Text: SEMICONDUCTOR KN3904 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 3904 2 816 No. Item 3 Marking Description KN Series Name 3904 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week
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KN3904
3904
KN3904
transistor 3904
3904 transistor
Transistor 3904 Datasheet
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Vitrohm
Abstract: 0R015 KN350-0 KN352-010 C6550 KN353-010 vitrohm resistors 0R068 KK351-0 KN350-009
Text: Series KN Low Ohmic Power Resistors, low inductance, ceramic case Specifications KN350-8 Type Styles Power rating P70 Resistance range W Ω E-Series Tolerances KN351-8 KN352-8 7725 7738 9925 9938 4 0R003 . 0R051 5 0R004 . 0R068 7 0R005 . 0R1 7 0R004 .
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KN350-8
KN351-8
KN352-8
KN353-8
KN354-8
0R003
0R051
0R004
0R068
0R005
Vitrohm
0R015
KN350-0
KN352-010
C6550
KN353-010
vitrohm resistors
KK351-0
KN350-009
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KN350-8
Abstract: KN352-011 KN351-010 KN350-0 kn352-0 7725 0R004 kn352-8 KN353-8 104M KN354-8
Text: Series KN Low Ohmic Power Resistors, low inductance, ceramic case Specifications KN350-8 Type Styles Power rating P70 Resistance range W Ω E-Series Tolerances KN351-8 KN352-8 7725 7738 9925 9938 4 0R003 . 0R051 5 0R004 . 0R068 7 0R005 . 0R1 7 0R004 .
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KN350-8
KN352-8
KN353-8
KN354-8
0R003
0R051
0R004
0R068
0R005
KN350-8
KN352-011
KN351-010
KN350-0
kn352-0
7725 0R004
kn352-8
KN353-8
104M
KN354-8
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KN351-009
Abstract: KN352-010 KN350-009 KN352 0R068 350-8 R010 KN352-009 1H165
Text: DATA SHEET LEADED POWER RESISTORS KN – PRECISION current sensors Product Specification - Jun. 18, 2003 V.0 UP TO 9.0 W Series KN Low Ohmic Power Resistors , axial, low inductance Specification Type KN350-0 KN351-0 KN352-0 Style 3313 3321 3332 Power rating P70
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1000h,
KN350-0
KN351-0
KN352-0
0R003
0R051
0R004
0R068
D-25337
KN350-8
KN351-009
KN352-010
KN350-009
KN352
350-8 R010
KN352-009
1H165
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KN350-8
Abstract: KN351-8 r010 KN350 350-8 R010 0R015 KN354-8 25337 KN351 marking L2
Text: Series KN Low Ohmic Power Resistors low inductance, Ceramic Case Specification Type KN350-8 KN351-8 KN352-8 KN353-8 KN354-8 Style 7718 7725 7738 9925 9938 Power rating P70 W 4 5 7 7 9 Resistance range Ω 0R003 . 0R051 0R004 . 0R068 0R006 . 0R1 0R004 .
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KN350-8
KN351-8
KN352-8
KN353-8
KN354-8
0R003
0R051
0R004
0R068
0R006
KN350-8
KN351-8
r010
KN350
350-8 R010
0R015
KN354-8
25337
KN351
marking L2
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KN3903S
Abstract: KN3905S
Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.
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KN3905S
-50mA,
-50nA
KN3903S.
Width300
100kHz
KN3903S
KN3905S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage D : ICEX=-50nA Max. ; @VCE=-30V, VEB=-3V. 3 H G A 2 : VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA.
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KN3905S
-50nA
-50mA,
KN3903S.
100kHz
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KN3903S
Abstract: KN3905S
Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.
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KN3905S
-50mA,
-50nA
KN3903S.
100kHz
KN3903S
KN3905S
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PDF
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KN3904S
Abstract: KN3906S
Text: SEMICONDUCTOR KN3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.
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KN3906S
-50mA,
-50nA
KN3904S.
100kHz
KN3904S
KN3906S
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PDF
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KN3903S
Abstract: KN3905S
Text: SEMICONDUCTOR KN3903S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =0.3V(Max.) ; IC=50mA, IB=5mA. 3 G A 2 D : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V.
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KN3903S
KN3905S.
KN3903S
KN3905S
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SOT89 MARKING CODE
Abstract: J-STD-020D rce marking 4A SOT89 MARKING CODE
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
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2DD2098R
2DB1386)
OT89-3L
J-STD-020D
DS31299
SOT89 MARKING CODE
J-STD-020D
rce marking
4A SOT89 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A Complementary PNP Type Available (2DB1386) Ideally Suited for Automated Assembly Processes
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2DD2098R
2DB1386)
OT89-3L
J-STD-020D
DS31299
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rce marking
Abstract: 2dd2098r 4A SOT89 MARKING CODE
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
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2DD2098R
2DB1386)
OT89-3L
OT89-3L
J-STD-020D
DS31299
621-2DD2098R-13
2DD2098R-13
rce marking
2dd2098r
4A SOT89 MARKING CODE
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KN3904S
Abstract: KN3906S
Text: SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current : IcE x=-50nA M ax. @ VCe =-30V , V eb = -3V . • Low Saturation Voltage
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KN3906S
-50nA
-50mA,
KN3904S.
KN3904S
KN3906S
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PDF
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KN3903S
Abstract: KN3905S
Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @ VCe =30V, V eb =3V. • Low Saturation Voltage
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KN3903S
KN3905S.
KN3903S
KN3905S
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PDF
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KN3904S
Abstract: KN3906S kec marking SOT
Text: SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V .
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KN3904S
KN3906S.
10x8x0
KN3904S
KN3906S
kec marking SOT
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PDF
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KN3903S
Abstract: KN3905S
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD KN3905S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM MILLIMETERS 2.93+0.20 A B • Low Leakage Current • Icex=-50nA Max. , @Vce- _30V, Veb- _3V.
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OCR Scan
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KN3905S
-50nA
-50mA,
KN3903S.
100KHz
KN3903S
KN3905S
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PDF
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KN3904S
Abstract: KN3906S
Text: KEC KOREA ELECTR ON ICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, Veb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.
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OCR Scan
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KN3904S
KN3906S.
10x8x0
KN3904S
KN3906S
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PDF
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KN3903S
Abstract: KN3905S
Text: SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V . • Low Saturation Voltage : V cE (sat)=0.3V (M ax.)
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OCR Scan
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KN3903S
KN3905S.
KN3903S
KN3905S
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PDF
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ZAA SOT-23
Abstract: KN3904S KN3906S zaa 04 ZAA SOT23
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current A B C D E G H J K L M N P : IcEx=-50nA Max. @ VCe =-30V , V eb =-3V .
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OCR Scan
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KN3906S
-50mA,
KN3904S.
ZAA SOT-23
KN3904S
KN3906S
zaa 04
ZAA SOT23
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