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    MARKING KN3 Search Results

    MARKING KN3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING KN3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KN3905S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN3905S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZSA 1 2 Item Marking Description Device Mark ZSA KN3905S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KN3905S OT-23 KN3905S

    ZCA SOT-23

    Abstract: ZCA KN3904S ZCA SOT23 ZCA be KN3904S KN3904 zca sot 23
    Text: SEMICONDUCTOR KN3904S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZCA 1 2 Item Marking Description Device Mark ZCA KN3904S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KN3904S OT-23 ZCA SOT-23 ZCA KN3904S ZCA SOT23 ZCA be KN3904S KN3904 zca sot 23

    ZAA SOT-23

    Abstract: ZAA MARK KN3906S KN3906 ZAA SOT23
    Text: SEMICONDUCTOR KN3906S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZAA 1 2 Item Marking Description Device Mark ZAA KN3906S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KN3906S OT-23 ZAA SOT-23 ZAA MARK KN3906S KN3906 ZAA SOT23

    3906

    Abstract: transistor 3906 KN3906 semiconductor 3906 marking KN
    Text: SEMICONDUCTOR KN3906 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 3906 2 816 No. Item 3 Marking Description KN Series Name 3906 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week


    Original     		PDF KN3906 3906 transistor 3906 KN3906 semiconductor 3906 marking KN

    3904

    Abstract: KN3904 transistor 3904 3904 transistor Transistor 3904 Datasheet
    Text: SEMICONDUCTOR KN3904 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KN 1 3904 2 816 No. Item 3 Marking Description KN Series Name 3904 Device Name Device Name Lot No. 1998. 6. 23 Revision No : 0 8 Year 0~9 : 1900~1999 16 Week


    Original     		PDF KN3904 3904 KN3904 transistor 3904 3904 transistor Transistor 3904 Datasheet

    Vitrohm

    Abstract: 0R015 KN350-0 KN352-010 C6550 KN353-010 vitrohm resistors 0R068 KK351-0 KN350-009
    Text: Series KN Low Ohmic Power Resistors, low inductance, ceramic case Specifications KN350-8 Type Styles Power rating P70 Resistance range W Ω E-Series Tolerances KN351-8 KN352-8 7725 7738 9925 9938 4 0R003 . 0R051 5 0R004 . 0R068 7 0R005 . 0R1 7 0R004 .


    Original     		PDF KN350-8 KN351-8 KN352-8 KN353-8 KN354-8 0R003 0R051 0R004 0R068 0R005 Vitrohm 0R015 KN350-0 KN352-010 C6550 KN353-010 vitrohm resistors KK351-0 KN350-009

    KN350-8

    Abstract: KN352-011 KN351-010 KN350-0 kn352-0 7725 0R004 kn352-8 KN353-8 104M KN354-8
    Text: Series KN Low Ohmic Power Resistors, low inductance, ceramic case Specifications KN350-8 Type Styles Power rating P70 Resistance range W Ω E-Series Tolerances KN351-8 KN352-8 7725 7738 9925 9938 4 0R003 . 0R051 5 0R004 . 0R068 7 0R005 . 0R1 7 0R004 .


    Original     		PDF KN350-8 KN352-8 KN353-8 KN354-8 0R003 0R051 0R004 0R068 0R005 KN350-8 KN352-011 KN351-010 KN350-0 kn352-0 7725 0R004 kn352-8 KN353-8 104M KN354-8

    KN351-009

    Abstract: KN352-010 KN350-009 KN352 0R068 350-8 R010 KN352-009 1H165
    Text: DATA SHEET LEADED POWER RESISTORS KN – PRECISION current sensors Product Specification - Jun. 18, 2003 V.0 UP TO 9.0 W Series KN Low Ohmic Power Resistors , axial, low inductance Specification Type KN350-0 KN351-0 KN352-0 Style 3313 3321 3332 Power rating P70


    Original     		PDF 1000h, KN350-0 KN351-0 KN352-0 0R003 0R051 0R004 0R068 D-25337 KN350-8 KN351-009 KN352-010 KN350-009 KN352 350-8 R010 KN352-009 1H165

    KN350-8

    Abstract: KN351-8 r010 KN350 350-8 R010 0R015 KN354-8 25337 KN351 marking L2
    Text: Series KN Low Ohmic Power Resistors low inductance, Ceramic Case Specification Type KN350-8 KN351-8 KN352-8 KN353-8 KN354-8 Style 7718 7725 7738 9925 9938 Power rating P70 W 4 5 7 7 9 Resistance range Ω 0R003 . 0R051 0R004 . 0R068 0R006 . 0R1 0R004 .


    Original     		PDF KN350-8 KN351-8 KN352-8 KN353-8 KN354-8 0R003 0R051 0R004 0R068 0R006 KN350-8 KN351-8 r010 KN350 350-8 R010 0R015 KN354-8 25337 KN351 marking L2

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.


    Original     		PDF KN3905S -50mA, -50nA KN3903S. Width300 100kHz KN3903S KN3905S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage D : ICEX=-50nA Max. ; @VCE=-30V, VEB=-3V. 3 H G A 2 : VCE(sat)=-0.4V(Max.) ; IC=-50mA, IB=-5mA.


    Original     		PDF KN3905S -50nA -50mA, KN3903S. 100kHz

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.


    Original     		PDF KN3905S -50mA, -50nA KN3903S. 100kHz KN3903S KN3905S

    KN3904S

    Abstract: KN3906S
    Text: SEMICONDUCTOR KN3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.


    Original     		PDF KN3906S -50mA, -50nA KN3904S. 100kHz KN3904S KN3906S

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR KN3903S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage H : VCE sat =0.3V(Max.) ; IC=50mA, IB=5mA. 3 G A 2 D : ICEX=50nA(Max.) ; @VCE=30V, VEB=3V.


    Original     		PDF KN3903S KN3905S. KN3903S KN3905S

    SOT89 MARKING CODE

    Abstract: J-STD-020D rce marking 4A SOT89 MARKING CODE
    Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A


    Original     		PDF 2DD2098R 2DB1386) OT89-3L J-STD-020D DS31299 SOT89 MARKING CODE J-STD-020D rce marking 4A SOT89 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A Complementary PNP Type Available (2DB1386) Ideally Suited for Automated Assembly Processes


    Original     		PDF 2DD2098R 2DB1386) OT89-3L J-STD-020D DS31299

    rce marking

    Abstract: 2dd2098r 4A SOT89 MARKING CODE
    Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A


    Original     		PDF 2DD2098R 2DB1386) OT89-3L OT89-3L J-STD-020D DS31299 621-2DD2098R-13 2DD2098R-13 rce marking 2dd2098r 4A SOT89 MARKING CODE

    KN3904S

    Abstract: KN3906S
    Text: SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J K L M N P • Low Leakage Current : IcE x=-50nA M ax. @ VCe =-30V , V eb = -3V . • Low Saturation Voltage


    OCR Scan     		PDF KN3906S -50nA -50mA, KN3904S. KN3904S KN3906S

    KN3903S

    Abstract: KN3905S
    Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @ VCe =30V, V eb =3V. • Low Saturation Voltage


    OCR Scan     		PDF KN3903S KN3905S. KN3903S KN3905S

    KN3904S

    Abstract: KN3906S kec marking SOT
    Text: SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V .


    OCR Scan     		PDF KN3904S KN3906S. 10x8x0 KN3904S KN3906S kec marking SOT

    KN3903S

    Abstract: KN3905S
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD KN3905S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM MILLIMETERS 2.93+0.20 A B • Low Leakage Current • Icex=-50nA Max. , @Vce- _30V, Veb- _3V.


    OCR Scan     		PDF KN3905S -50nA -50mA, KN3903S. 100KHz KN3903S KN3905S

    KN3904S

    Abstract: KN3906S
    Text: KEC KOREA ELECTR ON ICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, Veb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.


    OCR Scan     		PDF KN3904S KN3906S. 10x8x0 KN3904S KN3906S

    KN3903S

    Abstract: KN3905S
    Text: SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V . • Low Saturation Voltage : V cE (sat)=0.3V (M ax.)


    OCR Scan     		PDF KN3903S KN3905S. KN3903S KN3905S

    ZAA SOT-23

    Abstract: KN3904S KN3906S zaa 04 ZAA SOT23
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current A B C D E G H J K L M N P : IcEx=-50nA Max. @ VCe =-30V , V eb =-3V .


    OCR Scan     		PDF KN3906S -50mA, KN3904S. ZAA SOT-23 KN3904S KN3906S zaa 04 ZAA SOT23