Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING L TOSHIBA Search Results

    MARKING L TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    MARKING L TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA4000F

    Abstract: No abstract text available
    Text: TA4000F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4000F VHF~UHF Wide Band Amplifier Applications Features l Band width : 700 MHz min @3dB down l Low noise: 4dB (typ.) @f = 400 MHz l Small package Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


    Original     		PDF TA4000F 000707EBA1 TA4000F

    TG2205F

    Abstract: RF SPDT
    Text: TG2205F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2205F RF SPDT Switch Application: PHS Features l Low insertion loss: LOSS = 0.5dB (typ.) l Hight isolation: ISL = 25dB (typ.) l Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.)


    Original     		PDF TG2205F TG2205F RF SPDT

    TA4100F

    Abstract: No abstract text available
    Text: TA4100F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4100F UHF VHF RF, MIX Application Features l High fT. fT = 5 GHz l Differential circuit is composed of 3 transistors. Pin Assignment (top view) Marking Weight: 0.013 g (typ.) 000707EBA1


    Original     		PDF TA4100F 000707EBA1 TA4100F

    TA4101F

    Abstract: No abstract text available
    Text: TA4101F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4101F UHF VHF MIX Application Features l Double balance circuit Pin Assignment top view 1. IF OUT 2. VCC 3. OSC IN 4. Base Marking Weight: 0.02 g (typ.) 5. Base 6. Base 7. GND 8. Collector


    Original     		PDF TA4101F 000707EBA1 TA4101F

    Untitled

    Abstract: No abstract text available
    Text: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC(MAX) = −800mA) l With built-in bias resistors


    Original     		PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 800mA)

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


    Original     		PDF HN1C01F 150mA HN1C01F

    HN1C01FU

    Abstract: No abstract text available
    Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


    Original     		PDF HN1C01FU 150mA HN1C01FU

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO =−50V, IC =−150mA (max) l High hFE: hFE = 120~400


    Original     		PDF HN1A01FU -150mA HN1A01FU

    HN1A01F

    Abstract: No abstract text available
    Text: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (dual type) l High voltage and high current : VCEO = −50V, IC = −150mA (max) l High hFE: hFE = 120~400


    Original     		PDF HN1A01F -150mA HN1A01F

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications Unit: mm l Small package (dual type) l High voltage and high current : VCEO = −50V, IC = −150mA (max) l High hFE : hFE = 120~400


    Original     		PDF HN2A01FU -150mA HN2A01FU

    HN1B01FU

    Abstract: No abstract text available
    Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original     		PDF HN1B01FU -150mA 150mA 100mA, HN1B01FU

    HN2C01FU

    Abstract: No abstract text available
    Text: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm l Small package (dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


    Original     		PDF HN2C01FU 150mA HN2C01FU

    HN1B01F

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original     		PDF HN1B01F -150mA 150mA 000707EAA2 HN1B01F

    TA4008F

    Abstract: s22p
    Text: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x =9mA (Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND E VCC = 2.7~3.3V MARKING


    OCR Scan     		PDF TA4008F 1000pF TA4008F s22p

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TOSHIBA PHOTOCOUPLER TLP620 D4 SERIES, TLP621(D4)SERIES, TLP750(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP620, TLP620-2, TLP620-3, TLP620-4, TLP621, TLP621-2, TLP621-3, TLP621-4, TLP750,


    OCR Scan     		PDF TLP620 TLP621 TLP750 VDE0884 TLP620, TLP620-2, TLP620-3,

    TLP181

    Abstract: 1012 TOSHIBA VDE0884 IEC68 VDE0110 1060V UPR 800 TLP181 mark
    Text: TOSHIBA TLP18HV4 T O S H IB A P H O T O C O U P L E R T L P 1 8 1 V4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION Types : TLP181 Type designations for ‘ Option : (V4) ’ , which are tested under VDE0884 requirements. Ex. : TLP181 (V4-GR-TPR) V4 : VDE0884 option


    OCR Scan     		PDF TLP181 VDE0884 TLP181 1012 TOSHIBA IEC68 VDE0110 1060V UPR 800 TLP181 mark

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TLP762J D4 SERIES,TLP763J(D4)SERIES TOSHIBA PHOTOCOUPLER TLP762J(D4), TLP762JF(D4), TLP763J(D4), TLP763JF(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP762J, TLP762JF, TLP763J, TLP763JF Type designations for ‘Option : (D4)’, which are tested u n d er VDE0884 requirem ents.


    OCR Scan     		PDF TLP762J TLP763J TLP762JF TLP763JF VDE0884 TLP762J, TLP762JF, TLP763J,

    SIP-10P

    Abstract: No abstract text available
    Text: TOSHIBA TPD2006S TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC MODULE TPD2006S 4in1 LOW-SIDE SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE TPD2006S is a monolithic power IC for 4in 1 low-side switch. The IC has a vertical MOSFET output which can be


    OCR Scan     		PDF TPD2006S TPD2006S SIP10-P-2 SIP-10P

    TLP759

    Abstract: 1335V TLF759
    Text: TO SHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP7 59(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)’, which are tested under VDE0884 requirements. Ex. ; TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.


    OCR Scan     		PDF TLP759 VDE0884 TLP759, TLP759F TLP759 1335V TLF759

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPD2006S TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC MODULE TPD2006S 4in1 LOW-SIDE SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE TPD2006S is a monolithic power IC for 4in1 low-side switch. The IC has a vertical MOSFET output which can be


    OCR Scan     		PDF TPD2006S TPD2006S SIP10-P-2 TPD2006SJAPAN

    A1587

    Abstract: marking IAY 2SA1587 2SC4117
    Text: TOSHIBA 2SA1587 2 S A 1 587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • Unit in mm High Voltage : Vç;E o = —120V • 2.1 ± 0.1 L 25±0.1 Excellent hFE Linearity OO + I : hFE dC = - 0.1mA) / hFE (IC = - 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SA1587 --120V 2SC4117 A1587 marking IAY 2SA1587

    A1587

    Abstract: 2SA1587 MARKING J1A 2SC4117
    Text: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity


    OCR Scan     		PDF 2SA1587 A1587 -120V 2SC4117 A1587 2SA1587 MARKING J1A 2SC4117

    2SC4738

    Abstract: 2SA1832
    Text: TOSHIBA 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V ç;E q = 50V, I q = 150mA (Max.) Excellent hEE Linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC4738 2SA1832 961001EAA2' 2SC4738 2SA1832

    Untitled

    Abstract: No abstract text available
    Text: T E N T A T I YE T O S H I B A TPC6101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC6101 INDUSTRIAL APPLICATIONS UNIT: nun NOTE BOOK PC PORTABLE EQUIPMENTS APPLICATIONS •Low Drain - Source ON Resistance : R DS(0N)= 48mQ(Typ.) • High Forward Transfer Admittance : |Y f s |=8.2S (Typ.)


    OCR Scan     		PDF TPC6101 -200jxA)