KDR728
Abstract: MARKING L USC diode
Text: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL
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KDR728
KDR728
MARKING L USC diode
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KDR784
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR784 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K A ᴌLow Forward Voltage : VF 3 =0.42(Typ.) 1 E FEATURES G B H F ᴌSmall Package : USC. 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC DIM
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KDR784
100mA
KDR784
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KDR729
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR729 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A ᴌIO=200mA rectification possible. H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 4 =0.43(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ)
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KDR729
200mA
100mA
200mA
KDR729
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KDV175
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHFᴕUHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ᴌLow Series resistance : rS=7[ή] Typ. . A ᴌLow Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G
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KDV175
100MHz
KDV175
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AM/FM
Abstract: KDV175
Text: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ・Low Series resistance : rS=7[Ω] Typ. . A ・Low Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G
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KDV175
100MHz
AM/FM
KDV175
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KDR377
Abstract: diode schottky 40v 30ma
Text: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC I
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KDR377
KDR377
diode schottky 40v 30ma
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zener diode numbering system
Abstract: KDZ110VW bidirectional zener diode "bidirectional zener diode"
Text: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E ・Small Package : USC A L K 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J
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KDZ110VW
20x20mm
zener diode numbering system
KDZ110VW
bidirectional zener diode
"bidirectional zener diode"
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ZENER DIODE with Iz max Iz min
Abstract: KDZ100VW TJ B C
Text: SEMICONDUCTOR TECHNICAL DATA KDZ100VW Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E Small Package : USC A L K 1 FEATURES H Normal Voltage Tolerance About F Sharp breakdown characteristic. 5.0% 2 J D C I MAXIMUM RATING Ta=25
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KDZ100VW
20x20mm
ZENER DIODE with Iz max Iz min
KDZ100VW
TJ B C
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KDR377
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. K L A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC I
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KDR377
KDR377
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KDZ100VW
Abstract: No abstract text available
Text: SEMICONDUCTOR KDZ100VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E ・Small Package : USC A L 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J
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KDZ100VW
20x20mm
KDZ100VW
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KDR377
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F Small Package : USC. 1 E Low Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D MAXIMUM RATING (Ta=25 CHARACTERISTIC C ) I SYMBOL
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KDR377
KDR377
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KDR412
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. CATHODE MARK L K H F Low Forward Voltage : VF max=0.5V A Small Surface Mounting Type. USC 1 E FEATURES G B High Reliability 2 J D C I CONSTRUCTION
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KDR412
KDR412
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KDV358
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV358 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K H F ・Small Package : USC. A ・Low Series Resistance. : rS=0.4Ω Max. 1 E ・Good C-V Linearity. G B CATHODE MARK FEATURES 2 J D C
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KDV358
470MHz
KDV358
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BAV21W
Abstract: VR104
Text: SEMICONDUCTOR BAV21W TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. L K A H F ・Small surface mounting type USC . 1 E ・High Reliability. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage
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BAV21W
BAV21W
VR104
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KDR728
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL
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KDR728
KDR728
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. L A H F ・Low Forward Voltage : VF max=0.5V 1 E ・Small Surface Mounting Type. USC K CATHODE MARK FEATURES G B ・High Reliability 2 J D
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KDR412
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KDR728
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F Small Package : USC. 1 E Low Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D MAXIMUM RATING (Ta=25 CHARACTERISTIC C I ) SYMBOL RATING
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KDR728
KDR728
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MARKING L USC diode
Abstract: bidirectional zener diode
Text: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E ・Small Package : USC A L 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J
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KDZ110VW
20x20mm
MARKING L USC diode
bidirectional zener diode
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KDV175
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K A ・Low Capacitance : CT=0.25[pF] Typ. 1 E FEATURES G B H F ・Low Series resistance : rS=7[Ω] (Typ.).
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KDV175
100MHz
KDV175
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diode schottky 40v 30ma
Abstract: KDR377
Text: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC I
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KDR377
diode schottky 40v 30ma
KDR377
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diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
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160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
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1117 S 3,3 Transistor
Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .
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TA75W
1117 S 3,3 Transistor
Hall Sensor 4-lead
S-Mini
1117 S Transistor
transistor 1345
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diode yz zener
Abstract: 2A 5v ZENER DIODE Z6 marking 6 marking Z6
Text: KDZ2.0V-33V SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES B • Small Package : USC • Nominal Voltage Tolerance About ±6% . MAXIMUM RATING Ta=25°C
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V-33V
KDZ20V
KDZ22V
KDZ24V
KDZ33V
KDZ18V
DZ24V
KDZ10V
diode yz zener
2A 5v ZENER DIODE
Z6 marking 6
marking Z6
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Untitled
Abstract: No abstract text available
Text: SE M IC O N D U C T O R BAV21W TECHN ICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES [I • High Reliability. • Small surface mounting type USC . 1 MAXIMUM RATING (Ta=25°C) SYMBOL RATING UNIT Vrm 300 V B 2.50 ¿0.1 1.25¿0.05
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BAV21W
150mA
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