Si1303DL
Abstract: Si1303EDL
Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code
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Original
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Si1303EDL
OT-323
SC-70
08-Apr-05
Si1303DL
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PDF
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Si1303DL
Abstract: Si1303EDL
Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code
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Original
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Si1303EDL
OT-323
SC-70
18-Jul-08
Si1303DL
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PDF
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Si1303DL
Abstract: Si1303EDL
Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code
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Original
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Si1303EDL
OT-323
SC-70
09-Nov-99
Si1303DL
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PDF
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ptc 96209
Abstract: ptc degaussing PTC 96724 PTC THERMISTOR FOR DEGAUSSING PTC 96726 96724 PTC 96706 ptc degaussing 96724 PTC 96702 PTC 96624
Text: 2322 662 96. Vishay BCcomponents PTC Thermistors For Degaussing, Dual, Mono And Double Mono Cased FEATURES • Residual currents as low as 2 mA p-p , ideal for high-resolution displays a. Dual or double mono PTC degaussing. • Long decay time • Stable performance over a long time (>20000 operations)
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Original
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MBB633
10-Oct-03
ptc 96209
ptc degaussing
PTC 96724
PTC THERMISTOR FOR DEGAUSSING
PTC 96726
96724
PTC 96706
ptc degaussing 96724
PTC 96702
PTC 96624
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PDF
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vishay siliconix code marking
Abstract: No abstract text available
Text: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code
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OCR Scan
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S-01830--
21-Aug-00
S-01830--Rev.
vishay siliconix code marking
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PDF
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diode marking L5 sot363
Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
Text: _ SM906DL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS<on) (Œ ) lD (mA) 2.0 9 V q s = 4.5 V 250 2.5 V GS = 2.5 V 150 V DS(V) 20 SOT-363 S C-70 (6*Leads) Marking Code XX £ Lot Traceability
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OCR Scan
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SM906DL
OT-363
S-01885--
28-Aug-00
S11906DL
diode marking L5 sot363
VISHAY diode MARKING er
VISHAY SOT LOT CODE
marking L5 sot363
sot363 ON Marking DS
vishay siliconix code marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )
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OCR Scan
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Si2308DS
O-236
OT-23)
S-58492â
15-June-98
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PDF
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7130-1 transistor
Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200
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OCR Scan
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SM035X_
S-02367--Rev.
23-Oct-OO
7130-1 transistor
TRANSISTOR mosfet SD 1074
marking code LG
Si1301
RU4 diode
SM035X
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PDF
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Siliconix TO-92S
Abstract: No abstract text available
Text: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V
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OCR Scan
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TN2410L,
VN2406D/L,
VN241
TN2410L
VN2406D
VN2406L
VN2410L
VN2410LS
S-04279--
16-Jul-01
Siliconix TO-92S
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PDF
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p-channel mosfet bss92
Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5
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OCR Scan
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VP2020L,
BSS92
VP2020L
O-226AA
2410L
S-04279--
16-Jun-01
p-channel mosfet bss92
vishay siliconix code marking to-92
bss92
70210
VP2410
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PDF
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MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
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OCR Scan
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1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
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PDF
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VN2010L
Abstract: S0427 siliconix marking code BS107
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2
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OCR Scan
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
S-04279--
16-Jul-01
O-226AA)
S-0427
S0427
siliconix marking code
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PDF
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VP0610T
Abstract: 0610L BS250 TP0610T
Text: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4
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OCR Scan
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TP0610
VP061OL/T,
BS250
TP0610L
TP0610T
VP0610L
VP0610T
BS250
S-04623--
03-Sep-01
0610L
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PDF
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2N6660
Abstract: s0437 2N6660 siliconix VQ1004J
Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5
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OCR Scan
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2N6660,
VQ1004J/P
2N6660
VQ1004J/P
S-04379--
16-Jul-01
s0437
2N6660 siliconix
VQ1004J
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PDF
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VN66AFD
Abstract: vn66a
Text: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v
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OCR Scan
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TN0601L,
VN0606L,
VN66AFD
TN0601L
VN0606L
VN66AFD
S-04279--
16-Jul-01
vn66a
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PDF
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7130-1
Abstract: vishay siliconix code marking
Text: _ SÌ1300PL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY rDS<on) (Q) Iq (mA) 2.0 9 VGS = 4.5 V 250 2.5 @ VGS = 2 5 V 150 VDS(V) 20 Marking Code KC XXI Lot Traceability and Date Code ABSOLUTE MAXIMUM RATINGS (Ta = 2S C UNLESS OTHERWISE NOTED)
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OCR Scan
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1300PL
S-01883--
28-Aug-00
1300DL
S-01883--Rev.
7130-1
vishay siliconix code marking
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PDF
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03840
Abstract: MARKING CODE AA S0384-0
Text: Sii 501 DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel Vd s (V) N-Channe! 20 r D S (o n) lo(mA) (Q) 2.0 @ V GS = 4.5 V P-Channel 250 2.5 @ V GS = 2.5 V 150 3.8 @ VGS - -4 .5 V -1 8 0 5.0 @ VGS « -2 .5 V -1 0 0 -2 0
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OCR Scan
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OT-363
SC-70
S-03840--
21-May-01
SM501DL
03840
MARKING CODE AA
S0384-0
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PDF
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Untitled
Abstract: No abstract text available
Text: S Ì1024X Vishay Siliconix VISHAY New Product Dual N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY rDS(on) (&) lD (mA) 0.70 @ V GS = 4.5 V 600 0.85 @ V GS = 2.5 500 V d s (V) 20 M OSFETs V 1.8-V Rated (£) 350 1.25 @ VqS = 1 8 V ESD Protected 2000 V
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OCR Scan
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1024X
S-03104--
08-Feb-01
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PDF
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"MARKING CODE T2"
Abstract: marking BSs sot23 n-channel A7520 vishay siliconix code marking marking code, t2 marking marking code T2
Text: TN2460UTN2460T Vishay Siliconix N-Channel 240-V D-S MOSFET PRODUCT SUMMARY Part Number V (BR)DSS M ,n (V ) TN2460L Id Min (mA) *DS(on) M a x (£2) V GS(th)(V) 6 0 V GS= 1 0 V 0.5 to 1.8 75 6 0 ® VG S= 1 0 V 0.5 to 1.8 51 240 TN2460T FEATURES BENEFITS
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OCR Scan
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TN2460UTN2460T
TN2460L
TN2460T
S-04279--
16-Jul-01
O-226AA)
"MARKING CODE T2"
marking BSs sot23 n-channel
A7520
vishay siliconix code marking
marking code, t2
marking
marking code T2
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PDF
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71427
Abstract: Q5025
Text: SÌ1034X_ Vishay Siliconix New Product N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY V d s (V ) 20 MOSFETs »•DS(on) (& ) lD(mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS= 1.5 V 50 1.5-V Rated
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OCR Scan
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1034X_
S-03201--
12-Mar-01
1034X
S-03201--Rev.
71427
Q5025
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PDF
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2N7002W
Abstract: transistor marking 1p
Text: 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir powefsehconwjctor/ I Features Low On-Res¡stance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package
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OCR Scan
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2N7002W
OT-323
OT-323,
MIL-STD-202,
300ns,
DS30099
2N7002W
transistor marking 1p
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PDF
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Untitled
Abstract: No abstract text available
Text: SÌ1025X Vishay Siliconix New Product P-Channel 60-V D-S MOSFET TrenchFE T MOSFETs PRODUCT SUMMARY v (BR)DSS<mln) 00 -6 0 rDS<on) (Œ ) v GS(«h) 4 @ V q s = -1 0 V (V) lD ( m A ) -1 t o -3 .0 (Ê * ) -5 0 0 ESD Protected 2000 V FEATURES BENEFITS APPLICATIONS
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OCR Scan
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1025X
S-03518--
23-Apr-01
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PDF
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Untitled
Abstract: No abstract text available
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V {B R )D S S (V ) rD S (on) Max (Q) I d (A) V GS ( t h ) ( V ) VP0808L -8 0 5 @ V Gs = - 1 0 V - 2 t o -4 .5 -0 .2 8 VP1Q08L -1 0 0 5 @ V qs = - 1 0 V - 2 to -4 .5
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OCR Scan
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VP0808L,
VP1008L
VP0808L
VP1Q08L
S-04279--
16-Jui-01
O-226AA)
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PDF
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2222l
Abstract: 10kls SILICONIX MARKING VN 10K VN0610L siliconix VN10KLS
Text: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part N u m b e r V (B R )D SS M in (V ) rDS(on) M ax (£2) VN0610L VN10KLS I d (A ) (V) 0.8 to 2.5 0.27 5 @ V GS = 1 0 V 0.8 to 2.5 0.31 7.5 @ V GS = 10 V
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OCR Scan
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VN0610L,
VN10KLS,
VN2222L
VN0610L
VN10KLS
VN2222L
S-04279--
16-Jul-01
2222l
10kls
SILICONIX MARKING
VN 10K
VN0610L siliconix
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PDF
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