Untitled
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIO O X Yes Yes r 7 f — P"°n) fc O w E -M ID C O M MARKING DETAIL ON TOP SU R F A C E OF SH IELD ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise n o ted : INDUCTANCE: 350uH m in., 100kHz, lOOmV, 8mADC,
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350uH
100kHz,
1500Vrm
-18dB
-15dB
-12dB
100MHz.
60MHz.
80MHz.
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2SA1163
Abstract: No abstract text available
Text: 2SA1163 SILICON PNP EPITAXIAL TYPE Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = —120V Excellent hjrg Linearity : hpE Ic= —0.1mA /hFE (IC = —2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.)
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2SA1163
--120V
2SC2713
O-236MOD
SC-59
--10V,
2SA1163
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1223N
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC2712 U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0 .5 8.5 - a i • High Voltage and High Current • Excellent hpE Linearity • High hj"E : hj'E = 70~700 • Low Noise : NF = ldB Typ. , lOdB (Max.)
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2SC2712
150mA
2SA1162
1223N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SC5320
16GHz
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2SC5320
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SC5320
16GHz
SC-59
2SC5320
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v w f VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : jS2i ep= lOdB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5322F
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2SC5258
Abstract: No abstract text available
Text: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5258
2SC5258
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2SC5321
Abstract: bh marking
Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SC5321
16GHz
SC-70
2SC5321
bh marking
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2SC5321
Abstract: No abstract text available
Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)
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2SC5321
16GHz
2SC5321
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2SC5258
Abstract: No abstract text available
Text: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5258
2SC5258
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2SC5322F
Abstract: No abstract text available
Text: TOSHIBA 2SC5322F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= lOdB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC5322F
2SC5322F
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2SC5257
Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 2.9-0.3 • • : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain -e MAXIMUM RATINGS (Ta = 25°C)
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2SC5257
2SC5257
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2SC5257
Abstract: No abstract text available
Text: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • 2.9-0.3 : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain -e MAXIMUM RATINGS (Ta = 25°C)
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2SC5257
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2 .1 ± 0 . 1 • Low Noise Figure : NF = 1.5dB f=2GHz • High Gain : Gain = lOdB (f = 2GHz) . 1.25 ± 0-1 ri 2 MAXIMUM RATINGS (Ta = 25°C)
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2SC5258
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2SC5320
Abstract: MARKING LODB 2SC532
Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz)
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2SC5320
16GHz
SC-59
2SC5320
MARKING LODB
2SC532
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2SC5257
Abstract: No abstract text available
Text: TO SH IBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain m a v ì m i im RATiM r;« ; SYMBOL VCBO v CEO
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2SC5257
2SC5257
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2SC5257
Abstract: No abstract text available
Text: TO SH IBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f = 2GHz • High Gain : Gain = lOdB (f = 2GHz) m a v ì m i im RATiM r;« ; SYMBOL CHARACTERISTIC
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2SC5257
2SC5257
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2SC5258
Abstract: No abstract text available
Text: TO SH IBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f = 2GHz • High Gain : Gain = lOdB (f = 2GHz) m a v ì m i im RATiMr;«; SYMBOL CHARACTERISTIC
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2SC5258
2SC5258
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f = 2GHz • High Gain : Gain = lOdB (f = 2GHz) m a v ì m i im RATiM r;« ; SYMBOL CHARACTERISTIC
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2SC5257
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5541a
Abstract: 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484
Text: Ordering number: EN5541À 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications F eatu re s •High gain : I S21e I 2= lOdB typ f= 1GHz . • High cutoff frequency : fr = 5.2GHz typ. A bsolute M axim um E atin g s at Ta = 25°C
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EN5541Ã
2SC5375
10VfIE
5541a
2SC537
Transistor 4733
TA-0824
EN5541
2SC5375
IC 7484
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IC marking jw
Abstract: 2SC5097
Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le|2= lOdB f=2GHz -fr M A X IM U M RATINGS (Ta = 25°C)
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2SC5097
IC marking jw
2SC5097
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st zo 607
Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.
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EN5185
2SC5275
10dBtyp
st zo 607
ZO 607 MA
ZO 607 MA 135
zo 607
transistor zo 607
0124
Z0 607 MN
ZO 607 transistor
B/B/CQ 643
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2SC5098
Abstract: 7420 PC
Text: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= lOdB f=2G Hz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC5098
-j250
2SC5098
7420 PC
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC7104 100MHz Spread Spectrum Motherboard Clock Description • Employs Fairchild’s proprietary Spread Spectrum Technology • Reduces measured EM I by as much as lOdB • I2C programmable
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RC7104
100MHz
SEL100/66#
133MHz
48MHz
31818MHz
RC7104
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