m1l transistor
Abstract: m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor
Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G
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LMBT6428LT1G
LMBT6429LT1G
10000/Tape
LMBT6429LT3G
3000/Tape
LMBT6428LT3G
m1l transistor
m1l SOT-23
M1L marking
M1L3
LMBT6428LT1G
SOT-23 MARKING D
LMBT6429LT3G
marking m1l
marking M1L sot23
NPN/m1l transistor
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EWCAP 120-s-003-1-z02
Abstract: EWCAP 120-s-003-1-z01 EWCAP-001 120-S-003-1-Z02 EWCAP-001 TERMINAL 150-T001 15521522 064-S-003-1-Z01 connector EWCAP 120-S-003-1 USCAR-2 rev 5 EWCAP
Text: 33.30 #0.75 CAVITY OPENING MOLDED-OVER FOR P/N 54200381 ONLY FINAL ASSEMBLY MARKING TO BE LOCATED ON THIS SURFACE B 4 CPA-OPTIONAL PRE-ASSY POSITION MAT'L PA66 GF 35 1.50 (MOLD ( 1.40 ) A ( 0.30 ) WEDGE (TPA) 2 PRE-ASSY POSITION MAT'L PA66 GF 35 17.57
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F5434300
---D16
K29002
AM030093
EWCAP 120-s-003-1-z02
EWCAP 120-s-003-1-z01
EWCAP-001
120-S-003-1-Z02
EWCAP-001 TERMINAL 150-T001
15521522
064-S-003-1-Z01 connector
EWCAP 120-S-003-1
USCAR-2 rev 5
EWCAP
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2C66
Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
Text: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and
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-195CU/139B
-3-195C
JAN-2N1119
Re1iabi11t7
Aforceof80z.
4Ths-19500/139B
30nsec)
2C66
ML marking
t41l
1c51
MAXIM COUNTRY OF ORIGIN
3F61
19L4W
0532G
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Untitled
Abstract: No abstract text available
Text: i HI R DA N G L EP I l 2 _ J _ E CT~I ITEM CODE ECQE21030B3 1 1 21230B3 1 1 21530B3 1 1 21830B3 1 1 22230B3 1 1 22730B3 1 1 23330B3 1 1 23930B3 1 1 24730B3 1 1 25630B3 1 1 26830B3 1 1 28230 B3 1 1 21040B3 1 21240B3 1 1 21540B3 1 1 21840B3 1 1 22240B3 1 1 22740B3
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ECQE21030B3
21230B3
21530B3
21830B3
22230B3
22730B3
23330B3
23930B3
24730B3
25630B3
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T 3036
Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,
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2N2377
MIL-S-19SCW288
MIL-s-19500/288
T 3036
bel transistor 1041 B
SAQ marking
2N23
2N2377
S19C
T3036
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12085
Abstract: marking Hll
Text: THICK FILM TEMPERATURE COMPENSATION RESISTOR RGT Exclusive thick film process-results in a very linear, negative, 3000 ppm/°C resistance temperature characteristic Heat conducting ceramic substrate SERIES Digital marking High conductivity plate-on Negative temperature coefficient
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R25rC.
12085
marking Hll
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2N2015
Abstract: marking CF R/NPN/transistor cf 331 2N2016
Text: M1L-S-19500/248A EL 10 A di-II 1963 SUPERSEDING M IL-S -19500/248(S igC ) 21 June 1962 M ILITARY SPECIFICATION TRANSISTOR, N P N , S ILIC O N TYPES 2N2015, 2N2016 1. SCOPE 1.1 Scope. - This sp e cifica tio n cover* the d eta il requirements fo r si I icon, N P N , transistors
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M1L-S-19500/248A
95Q0/248
2N2015,
2N2016
95G0/248A(
2N2015
marking CF
R/NPN/transistor cf 331
2N2016
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Scans-0016000
Abstract: No abstract text available
Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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OCR Scan
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00D0125
MIL-S-19500/226B
MIL-S-19500/226A
1N3666U)
MIL-S-19500.
-55aC
HIL-S-19500/226B
S961-1161-1)
Scans-0016000
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PDF
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A720 transistor
Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.
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2N3906
MIL-S-19500/530
MIL-S-19500.
MIL-S-19500
5961-A720)
A720 transistor
transistor A720
4392 ic equivalent
2N3906
350MW
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PDF
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7802901JX
Abstract: HD1-15530-8 HD4-15530-8 78029
Text: D ESC FORM 193 MAY 86 Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN
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OCR Scan
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7802901JX
HD1-15530-8
78029013X
HD4-15530-8
M38510/50101
78029
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PDF
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7802901JX
Abstract: HD1-15530-8
Text: D ESC FORM 193 MAY 86 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ± 1. SCOPE 1.1 Scope. T h is drawing describes device requirements fo r c la s s B m ic ro c irc u its in accordance with 1 .2 .1 ot M1L-STD-883, “ Pro vision s fo r the use of MIL-STD-883 in conjunction with compliant non-JAN
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7802901JX
HD1-15530-8
78029013X
HD4-15530-8
M38510/50101
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PDF
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C4296
Abstract: RT1L AS4C4256 CAH-15 CSR1010
Text: AUSTIN SEMICONDUCTOR, INC. 256K DRAM AS4C4256 883C 256 X 4 ORAM 4 DRAM X FAST PAGE MODE AVAILABLE AS M ILITA RY S P E C IF IC A T IO N • S M D 5% 2-‘X 6I7 • M1L-STD-S83 PIN ASSIGNMENT TopView) 20-Pin DIP FEATURES • • • • • • • • Industry standard pinout an d tim ing
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AS4C4256
SMD5962-90617
MIL-STD-883
175mW
512-cycle
-55CC
125UC)
100ns
120ns
C4256
C4296
RT1L
CAH-15
CSR1010
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E1A-481
Abstract: No abstract text available
Text: % f 1 a, t V RT05, RT03, THIN FILM CHIP RESISTORS 1 m % s * \ i v * J i m * FEATURES • High stability «LowTCR • H'9h accuracy ±0.1%,±0.5% M ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70'C Temperature coefficient Delated to 0 load at
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OCR Scan
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100Q-100KQ
25ppm
-33Kiï
1/10W
--91Q
100S2--100Kß
100ppm/`
1/16W
E1A-481
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PDF
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e1a481
Abstract: E1A-481
Text: _% «5*^% * 1 i t a rr -M m ^4 * ^ » £ * % ¿s. e ^@6- 4^ ga»g # FEATURES . • High stability ^ pB| W • RT05, RT03, THIN FILM CHIP RESISTORS 4 % .H ig h accuracy ±0.1%,±0.5% ^ ELECTRICAL CHARACTERISTICS Size Code RT05 RT03 Power rating @70 °C
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OCR Scan
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M00KQ
25ppm/
100Q-33KQ
--25ppm/"
1/10W
--100ppm/
to--125
--91Q
50ppm/
--100KQ
e1a481
E1A-481
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PDF
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qml-38535
Abstract: GDFP1-F14 TLC2252 TLC2252A TLC2254 TLC2254A FKB* MARKING
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device class N and plastic small outlines X and Y. Make changes to 1.2.3,1.2.4,1.3, table I, figure 1, figure 2, and table II. 95-07-20 M. A. FRYE B Add device types 03 and 04. Technical and editoral changes
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TLC2254AMDQ
5962-9564004QCA
TLC2254AMJB
5962-9564004QDA
TLC2254AMWB
5962-9564004Q2A
TLC2254AMFKB
TDD47Dfl
3S47M
qml-38535
GDFP1-F14
TLC2252
TLC2252A
TLC2254
TLC2254A
FKB* MARKING
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PDF
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2272M
Abstract: qml-38535 CDFP2-F10 CQCC1-N20 GDFP1-F10 TLC2272AM TLC2272M
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED Changes IAW NOR 5962-R017-96 96-01-10 M. A. Frye Add device type 02. changes throughout. 96-02-06 M. A. Frye Editorial and technical REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STAND ARD M ICRO CIRC UIT
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OCR Scan
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5962-R017-96
QML-38535.
QML-38535
NIL-HDBK-103.
MIL-HDBIC-103
0G47DÃ
11b7S
2272M
CDFP2-F10
CQCC1-N20
GDFP1-F10
TLC2272AM
TLC2272M
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PDF
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diode IN457
Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September
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OCR Scan
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MIL-S-19500/193C
1N457,
1N458,
1N459
MIL-S-19500
5961-A371)
diode IN457
JYt marking
IC 4011 details
1N457
1N458
1N459
origin semiconductor rectifier
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PDF
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Crystal oscillator S1100
Abstract: S1100
Text: 5aRonix Crystal Clock Oscillator Trae TTL Technical Data SI 100 Series Frequency Range: 20 MHz to 110 MHz 14 size - 20 MHz to 70 MHz Frequency Stability: ±25, ±50 or ±100 ppm over all conditions: calibration tolerance, operating temperature range, input voltage range, load change,
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OCR Scan
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M1L-STD-883,
IL-STD-883,
IL-STD-202,
DS-117
Crystal oscillator S1100
S1100
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PDF
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CQCC1-N20
Abstract: UC1835 UC1836 M1L-HDBK-780
Text: REVISIONS LTR DESCRIPTION Add device type 02. changes th ro ug ho ut. DATE YR-MO-DA Editorial and technical 96-05-16 APPROVED M. A. Frye REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING REV SHEET PREPARED BY RICK C. OFFICER
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OCR Scan
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TGG47DÃ
QG22174
MIL-HDBK-103.
MIL-HDBK-103
TD0470A
CQCC1-N20
UC1835
UC1836
M1L-HDBK-780
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PDF
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13001 s 6B
Abstract: HA 13001 2 sc 13001 CS 13001 si 13001 54s570 1KTN1 82S130A 54s571 MARKING S1G f4
Text: M1L-M-38510/204D IM Ü g f f .t t ” — MIL-M-36510/204C 31 J a n u a r y 1984 MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, 2048-BIT S C H O T T K Y , BIPOLAR, P R O G R A M M A B L E R E A D - O N L Y M E M O R Y PRO M , M O N O L I T H I C S I L I C O N
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OCR Scan
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IL-M-38510/204D
MIL-M-36510/204c
2048-bit
MIL-M-38510.
CDW0/34371
CCXP/27014
CECO/50364
CDK6/18324
CFJ/07263
CRP/07933
13001 s 6B
HA 13001
2 sc 13001
CS 13001
si 13001
54s570
1KTN1
82S130A
54s571
MARKING S1G f4
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PDF
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T 4512 H diode
Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
Text: This documentation and process conversion measures necessary to comply with this revision shall be completed by 22 Oct 94, | INCH-POUND | I_ i MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-S-19500/420C 15 June 1992 MI L I T A R Y SP EC IF IC AT IO N
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MIL-S-19500/4200
MIL-S-19500/420C
1N5550
1N5554,
1N5550US
1N5554US
MIL-S-19500.
JANHCC1N5551
JANKCA1N5551
1N5552
T 4512 H diode
ps 4512 diode
diode T 4512 H
1N5551US
1N5551
1N5552
1N5554
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PDF
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DD345
Abstract: D0345 5962-8864601XA 5962-8864601NA 5962-8864601UA OM-1850-S-T-M OMNIREL 5962-8864601ua 5962-8864
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add vendor CAGE 69210. Add case outline U. Editorial chanqes throuqhout. 90-09-24 W. J. Johnson B Add case outline N. Editorial chanqes throughout. 96-01-16 M. A. Frye C Changes in accordance with NOR 5962-R104-96.
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5962-R104-96.
DD345
D0345
5962-8864601XA
5962-8864601NA
5962-8864601UA
OM-1850-S-T-M
OMNIREL 5962-8864601ua
5962-8864
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PDF
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qml-38535
Abstract: CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b
Text: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Make change to interim electricals as specified in TABLE In accordance with N.O.R. 5962-R042-96. 96-01-17 M. A. FRYE Add case outline H and device type 02. Make changes to 1.2.2, 1.3, 1.4, TABLE I, and FIGURE 1. ro
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OCR Scan
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5962-R042-96.
qml-38535
CDFP2-F10
CQCC1-N20
GDFP1-F10
003001b
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PDF
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5962-9689201VKA
Abstract: AD565AS AD565AT AD565ASN CDIP4-T24 qml38535 qml-38535
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 98-01-22 Raymond Monnin Add case outline “J”. Update boilerplate. - drw REV SHEET REV SHEET REV STATUS OF SHEETS REV A A A A A A A A A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 PREPARED BY Dan Wonnell PMIC N/A
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12-BIT
T0047Ã
5962-9689201VKA
AD565AS
AD565AT
AD565ASN
CDIP4-T24
qml38535
qml-38535
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