MA740
Abstract: Marking m3c
Text: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature
|
Original
|
2SK1606
MA740
200mA
100mA
MA740
Marking m3c
|
PDF
|
Marking m3c
Abstract: m3c 55 MA3X740 diode M3C 055
Text: Schottky Barrier Diodes SBD MA3X740 Silicon epitaxial planar type Unit : mm + 0.2 For super high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 1.45 1 + 0.1 3 2 Repetitive peak reverse voltage Average forward current Single Peak forward
|
Original
|
MA3X740
O-236
SC-59
Marking m3c
m3c 55
MA3X740
diode M3C 055
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
|
Original
|
MA3X740
MA740)
MA3X721
MA721)
|
PDF
|
IR 50
Abstract: JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
|
Original
|
MA3X740
MA740)
MA3X721
MA721)
IR 50
JIS C 1102
diodes ir
MARKING 103
MA3X721
MA3X740
MA721
MA740
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
|
Original
|
MA3X740
MA740)
MA3X721
MA721)
150nteed
|
PDF
|
MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
|
Original
|
2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
|
Original
|
2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
|
PDF
|
MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc
|
Original
|
2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
|
PDF
|
ETC 529 DIODE
Abstract: MA3X740 MA740 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Repetitive peak reverse voltage Average forward current Single Peak forward current Single VR 30 V VRRM 30 V IF(AV) 200 mA Double*1 Single Non-repetitive peak forward surge current*2 Double*1
|
Original
|
MA3X740
MA740)
O-236
SC-59
ETC 529 DIODE
MA3X740
MA740
panasonic ma diodes sc-59 Marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
|
Original
|
MA3X740
MA740)
MA3X721
MA721)
|
PDF
|
MA3X721
Abstract: MA3X740 MA721 MA740
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series
|
Original
|
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
|
PDF
|
MA3X721
Abstract: MA3X740 MA721 MA740
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
|
Original
|
2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
MA3X721
MA3X740
MA721
MA740
|
PDF
|
HS2065DC
Abstract: QHS25 QHS25-033 800uH
Text: QHS25 SERIES High Efficiency 25A Quarter-Brick Converters Features: 9 Very High Efficiency: to 88% 9 Very High Density: 25A in Quarter-brick 9 1.8V, 2.5V, 3.3V Models 9 Industry-Standard Pin-out Parameter Input Conditions Input Voltage Vin Input Ripple Current
|
Original
|
QHS25
QHS25-6200011259
HS2065DC
QHS25-033
800uH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
|
Original
|
2002/95/EC)
MA3X740
MA740)
MA3X721
MA721)
|
PDF
|
|
|
220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
|
Original
|
P390-ND
P465-ND
P466-ND
P467-ND
LNG901CF9
LNG992CFBW
LNG901CFBW
LNG91LCFBW
220v AC voltage stabilizer schematic diagram
BA 49182
RJh 3047
rjh 3047 equivalent
a1458 opto
philips ecg master replacement guide
MOSFET, rjh 3077
sc1097
philips ecg semiconductors master replacement guide
Electronic ballast 40W using 13005 transistor
|
PDF
|
PBD14
Abstract: PBD26 PBD24 PBD12 ALLAYER COMMUNICATIONS PBD30 ETD12 PBD18 PBD-28 ETD10
Text: AL15 Revision 1.0 5-PORT LOW COST 10/100 SWITCH WITH RMII • • • • • • • • Supports five 10/100 Mbit/s Ethernet ports with RMII interface Capable of trunking up to 500 Mbit/s link Full- and half-duplex mode operation Speed auto-negotiation through MDIO
|
Original
|
|
PDF
|
ALLAYER COMMUNICATIONS
Abstract: MG802C256q-10 AL102A PBD18 PBD10 PBD20
Text: AL102A Revision 1.0 8 PORT LOW COST 10/100 SWITCH • • • • • • • • • Supports eight 10/100 Mbit/s Ethernet ports with MII interface Capable of trunking up to 800 Mbit/s link Full- and half-duplex mode operation Speed auto-negotiation through MDIO
|
Original
|
AL102A
AL102A
ALLAYER COMMUNICATIONS
MG802C256q-10
PBD18
PBD10
PBD20
|
PDF
|
ALLAYER COMMUNICATIONS
Abstract: MG802C256q-10 AL102A AL103 PBD18 PBD20 SUPERMAC
Text: AL103 Revision 1.0 8 PORT LOW COST 10/100 SWITCH • • • • • • • • • • • Supports 8 10/100 Mbit/s MII ports Capable of trunking up to 800 Mbit/s link Trunk fail-over feature Full- and half-duplex mode operation Speed auto-negotiation through MDIO
|
Original
|
AL103
AL102A
AL103
ALLAYER COMMUNICATIONS
MG802C256q-10
PBD18
PBD20
SUPERMAC
|
PDF
|
PBD14
Abstract: MG802C256q-10 AL104 PBD10 PBD18 PBD20 ETA12 SFD 313 ETD5 PBD17
Text: AL104 Revision 1.0 8 PORT LOW COST 10/100 SWITCH WITH RMII • • • • • • • • • Supports 8 10/100 Mbit/s Ethernet ports with RMII interface Capable of trunking up to 800 Mbit/s link Trunk fail-over feature Full- and half-duplex mode operation
|
Original
|
AL104
AL104
PBD14
MG802C256q-10
PBD10
PBD18
PBD20
ETA12
SFD 313
ETD5
PBD17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742F – JUNE 2011 – REVISED APRIL 2013 Concerto Microcontrollers Check for Samples: F28M35H52C 1 F28M35x Concerto MCUs 1.1 Features • Master Subsystem — ARM Cortex™-M3
|
Original
|
F28M35H52C,
F28M35H22C
F28M35M52C,
F28M35M22C,
F28M35M20B
F28M35E20B
SPRS742F
F28M35H52C
F28M35x
512KB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: — Al SI I N S H M K O N D IJ C T O R . IN C MILITARY SRAM M T 5 C 1 0 0 9 883C 128K X 8 S R A M 128Kx 8 SRAM WITH SINGLE CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS • SM D 5962-89598, Class M • M IL-STD -883, Class B • Radiation tolerant consult factor ')
|
OCR Scan
|
128Kx
MIL-STD-883
MT5C1009
|
PDF
|
4c1024
Abstract: ofwe LTWE AS4C1024 C1024 CSR1010
Text: ASO AS4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE i AVAILABLE AS MILITARY SPECIFICATIONS -PIN ASSIGNMENT Top View • M il .-STD-883 18-Pin DIP • Industry standard pinout and tim ing • All inputs, outputs and clocks are fully TT1.
|
OCR Scan
|
-STD-883
175mW
512-cycle
100ns
120ns
AS4C1024
MIL-STD-883
CMM016
4c1024
ofwe
LTWE
C1024
CSR1010
|
PDF
|
smd m3c
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E » • blllSkT QQD5flSb Mlfi ■ fIRN M T52C9Ü20 883C 2K x 9 F IFO MICRON MILITARY FIFO 2K x 9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS P IN A S S IG N M E N T (Top View 28-Pin D IP (D15/D10) vfi 1 D8 I 2 D3I 3 D2I 4 01 15 DO I 6
|
OCR Scan
|
T52C9
MIL-STD-883,
28-Pin
D15/D10)
MT52C9Q20
MT5SC9020
smd m3c
|
PDF
|
B33A10
Abstract: R6095 Q031 THOMSON-CSF PRODUCTS A24C11
Text: 's i m m m ê m m m w m m TSPC860 ü b 32 BIT QUAD INTEGRATED POWER QUICC COMMUNICATION CONTROLLER D ESC RIPTIO N The TSPC860 PowerPC” QUad Integrated Communication Controller Power QUICC™ is a versatile one-chip Integrated microprocessor and peripheral combination that can be used
|
OCR Scan
|
TSPC860
TSPC860
TS68EN360
32-bit
TS68EN360
46-91401ORSA
B33A10
R6095
Q031
THOMSON-CSF PRODUCTS
A24C11
|
PDF
|
