A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: M5KP5.0A – M5KP110CA e3 Available 5,000 Watt Transient Voltage Suppressor (TVS) Protection Device Screening in reference to MIL-PRF-19500 available DESCRIPTION This Transient Voltage Suppressor series M5KP5.0A – M5KP110CA provides a range of standoff voltage options from 5.0 to 110 V in unidirectional, bidirectional, RoHS compliant, and
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M5KP110CA
MIL-PRF-19500
IEC61000-4-2
IEC61000-4-4,
RF01010,
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Untitled
Abstract: No abstract text available
Text: Product specification MA3XD17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High breakdown voltage VR = 100 V
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MA3XD17
OT-23
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MA3XD17
Abstract: MARKING M5K
Text: Diodes SMD Type Schottky Barrier Diodes MA3XD17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High breakdown voltage VR = 100 V
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MA3XD17
OT-23
MA3XD17
MARKING M5K
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Unit Reverse voltage (DC) VR 100 V Peak reverse voltage
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MA3XD17
SC-59
N-50BU
PG-10N)
SAS-8130)
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MA3XD17
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit : mm 2.8 + 0.25 1.45 0.95 0.65 ± 0.15 1.5 − 0.05 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Mini type 3-pin package • High breakdown voltage VR = 100 V 1.9 ± 0.2 0.65 ± 0.15 • Features
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MA3XD17
SAS-8130)
MA3XD17
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MA3XD17
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit : mm 2.8 + 0.25 1.45 0.95 0.65 ± 0.15 1.5 − 0.05 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Mini type 3-pin package • High breakdown voltage VR = 100 V 1.9 ± 0.2 0.65 ± 0.15 • Features
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MA3XD17
MA3XD17
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MA3XD17
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 100 V Peak reverse voltage VRM 100 V Non-repetitive peak forwardsurge-current *
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MA3XD17
SC-59
MA3XD17
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Unit Reverse voltage (DC) VR 100 V Peak reverse voltage
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MA3XD17
SC-59
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MA3XD17
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 0.4±0.2 5˚ 2.90+0.20 –0.05
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MA3XD17
SC-59
MA3XD17
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MA3XD17
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 100 V Peak reverse voltage VRM 100 10˚ V 1.1+0.3 –0.1 Rating VR 1.1+0.2 –0.1
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MA3XD17
MA3XD17
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 VRM Non-repetitive peak forwardsurge-current * IFSM Average forward current IF(AV) Junction temperature Tj Storage temperature
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MA3XD17
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2d6 transistor
Abstract: TRANSISTOR MARKING 1d8
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
2d6 transistor
TRANSISTOR MARKING 1d8
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Untitled
Abstract: No abstract text available
Text: MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0 – MSMLJ170CAe3 Available Surface Mount 3000 Watt Transient Voltage Suppressor Screening in reference to MIL-PRF-19500 available DESCRIPTION The MSMLG J 5.0A through MXLSMLG(J)170A series of high-reliability Transient Voltage
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MSMLG170CAe3,
MSMLJ170CAe3
MIL-PRF-19500
DO-215AB
DO-214AB
RF01003,
DO-215AB)
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C101
Abstract: CTU4411 SN74CBTU4411 SN74CBTU4411GSTR
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
SN74plifiers
C101
CTU4411
SN74CBTU4411
SN74CBTU4411GSTR
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2d6 transistor
Abstract: TRANSISTOR MARKING 1d6 TRANSISTOR MARKING 1d7
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
2d6 transistor
TRANSISTOR MARKING 1d6
TRANSISTOR MARKING 1d7
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Untitled
Abstract: No abstract text available
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
SCDS192
000-V
A114-B,
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400w audio fet
Abstract: C101 CTU4411 SN74CBTU4411 SN74CBTU4411GSTR fet Marking M3
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
SN74trollers
400w audio fet
C101
CTU4411
SN74CBTU4411
SN74CBTU4411GSTR
fet Marking M3
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TRANSISTOR MARKING 1d8
Abstract: No abstract text available
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
TRANSISTOR MARKING 1d8
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias
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SN74CBTU4411
11BIT
SCDS192
000-V
A114-B,
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3296 suntan
Abstract: Potentiometer 3296 H 101 i 3296X potentiometer 3296 3266P 3296P 3296Y 3296Z 6H MARKING s35m
Text: Suntan S q u a r e r i m m i n g & 3296 P o t e n t i o m e t e r 3 266 m TSR-3296 TSR-3266 Multiturn/Cermet/Industrial/Sealed (5 Terminal Styles) TSR-3296 TSR •3296 TSR - 3266 10Q - 2MQ io n - 2MQ ±5 % ,± 1 0 % ± 5 % ,± 1 0 % sl%RSfc2Q s l% R â l0 Q
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640Vae
500Vac
TSR-3296
TSR-3266
TSR-3296
3296Y
3296Z
3266P
3296 suntan
Potentiometer 3296 H 101 i
3296X
potentiometer 3296
3266P
3296P
3296Y
6H MARKING
s35m
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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