A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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marking M8Y
Abstract: marking n1y ILC5061 ILC5061AM23X ILC5061AM25X ILC5061AM26X ILC5061AM27X ILC5061AM28X ILC5061AM29X ILC5061AM31X
Text: www.fairchildsemi.com ILC5061 Power Supply reset Monitor with 1% Precision Features Description • • • • • • All-CMOS design in SOT-23 or SC70 package ±1% precision in Reset Detection Only 1µA of Iq 2mA of sink current capability Built-in hysteresis of 5% of detection voltage
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ILC5061
OT-23
ILC5061
marking M8Y
marking n1y
ILC5061AM23X
ILC5061AM25X
ILC5061AM26X
ILC5061AM27X
ILC5061AM28X
ILC5061AM29X
ILC5061AM31X
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marking M8Y
Abstract: ILC5061IC46
Text: www.fairchildsemi.com ILC5061 Power Supply reset Monitor with 1% Precision Features Description • • • • • • All-CMOS design in SOT-23 or SC70 package ±1% precision in Reset Detection Only 1µA of Iq 2mA of sink current capability Built-in hysteresis of 5% of detection voltage
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ILC5061
OT-23
ILC5061
ILC5061M34
ILC5061M34X
marking M8Y
ILC5061IC46
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M7 smd diode
Abstract: diode smd m7 smd diode M7 Diode marking m7 m7 smd diodes MAS70A smd m7 diode m7 diode smd m7a MAS70S
Text: SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS * Surface mount device * Extremely fast switching * Negligible switching losses * Low forward voltage drop * Very small conduction losses DESCRIPTION Schottky barrier diode encapsulated in a SOT-23 small SMD package
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OT-23
MAS70
OT-23
MAS70C
MAS70A
MAS70S
M7 smd diode
diode smd m7
smd diode M7
Diode marking m7
m7 smd diodes
MAS70A
smd m7 diode
m7 diode
smd m7a
MAS70S
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SOT23-3 marking 016
Abstract: marking n1y ILC5061 ILC5061AM23 ILC5061AM25 ILC5061AM26 ILC5061AM27 ILC5061AM28 ILC5061AM29 ILC5061AM31
Text: www.fairchildsemi.com ILC5061 Power Supply reset Monitor with 1% Precision Features Description • • • • • • All-CMOS design in SOT-23 or SC70 package ±1% precision in Reset Detection Only 1µA of Iq 2mA of sink current capability Built-in hysteresis of 5% of detection voltage
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ILC5061
OT-23
ILC5061
SOT23-3 marking 016
marking n1y
ILC5061AM23
ILC5061AM25
ILC5061AM26
ILC5061AM27
ILC5061AM28
ILC5061AM29
ILC5061AM31
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low voltage reset SC70-3
Abstract: ILC5061 ILC5061AM23 ILC5061AM25 ILC5061AM26 ILC5061AM27 ILC5061AM28 ILC5061AM29 ILC5061AM31 top marking sot23-3
Text: www.fairchildsemi.com ILC5061 Power Supply reset Monitor with 1% Precision Features Description • • • • • • All-CMOS design in SOT-23 or SC70 package ±1% precision in Reset Detection Only 1µA of Iq 2mA of sink current capability Built-in hysteresis of 5% of detection voltage
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ILC5061
OT-23
low voltage reset SC70-3
ILC5061
ILC5061AM23
ILC5061AM25
ILC5061AM26
ILC5061AM27
ILC5061AM28
ILC5061AM29
ILC5061AM31
top marking sot23-3
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA6XD16 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Peak forward current 1.1+0.3 –0.1 Reverse voltage (DC) 1.1+0.2 –0.1 Unit 0 to 0.1 Rating
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MA6XD16
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U12197E
Abstract: MARKING m7a IE-703102-MC uPD703100-40 V800 IE-70000-98-IF-B U12688E
Text: User’s Manual IE-703102-MC In-circuit Emulator Target device V850E/MS1TM Document No. U13875EJ1V0UM00 1st edition Date Published December 1998 N CP(K) 1991 1998 Printed in Japan [MEMO] 2 V850E/MS1 and V800 Series are trademarks of NEC Corporation. Windows is either a trademark or a registered trademark of Microsoft Corporation in the United States and/or
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IE-703102-MC
V850E/MS1TM
U13875EJ1V0UM00
V850E/MS1
document88-6130
U12197E
MARKING m7a
IE-703102-MC
uPD703100-40
V800
IE-70000-98-IF-B
U12688E
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M7A transistor
Abstract: transistor M7A MARKING m7a M7A MARKING SOT-23 10 M7A MMBT2907A
Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
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MMBT2907A
-600mA
2002/95/EC
OT-23
MIL-STD-750
10-Temperature
M7A transistor
transistor M7A
MARKING m7a
M7A MARKING SOT-23
10 M7A
MMBT2907A
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M7A transistor
Abstract: MARKING m7a transistor M7A MMBT2907AW
Text: Approve Sheet Part Number: MMBT2907AW MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) Collector current IC = -600mA In compliance with EU RoHS 2002/95/EC directives and with Halogen
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MMBT2907AW
OT-323
-600mA
2002/95/EC
MIL-STD-750
M7A transistor
MARKING m7a
transistor M7A
MMBT2907AW
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MARKING m7a
Abstract: transistor M7A M7A transistor
Text: Schottky Barrier Diodes SBD MA6XD16 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d VR 30 V Peak reverse voltage VRM 30 V IF 30 mA IFM Series 150 mA Tj 125 °C Storage temperature
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MA6XD16
MARKING m7a
transistor M7A
M7A transistor
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MMDT2907A
Abstract: No abstract text available
Text: MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mW POWER 60 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V • Collector current IC = -600mA • Pb free product : 99% Sn above can meet RoHS
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MMDT2907A
-600mA
OT-363
MIL-STD-750D
10-Temperature
MMDT2907A
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M7A transistor
Abstract: MARKING m7a transistor M7A 125OC MMDT2907A
Text: MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 150 mW 0.054 1.35 0.045(1.15) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) 0.056(1.40) 0.047(1.20)
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MMDT2907A
-600mA
2002/95/EC
OT-363
MIL-STD-750
10-Temperature
2010-REV
M7A transistor
MARKING m7a
transistor M7A
125OC
MMDT2907A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA6XD16 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 1.50+0.25 –0.05 4 Peak reverse voltage Forward current (DC) Single Series Peak forward current Single Series Junction temperature
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MA6XD16
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M7A transistor
Abstract: transistor M7A MARKING m7a MMBT2907A
Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) .103(2.60) Collector current IC = -600mA Pb free product are available : 99% Sn above can meet RoHS .047(1.20)
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MMBT2907A
-600mA
OT-23
MIL-STD-750
M7A transistor
transistor M7A
MARKING m7a
MMBT2907A
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M7A transistor
Abstract: MARKING m7a IE-703102-MC uPD703100-40 V800 logic probe
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d88-6130
M7A transistor
MARKING m7a
IE-703102-MC
uPD703100-40
V800
logic probe
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MMBT2907A
Abstract: M7A transistor transistor M7A M7A MARKING SOT-23
Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 225 mWDWWV PNP epitaxial silicon, planar design 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA /
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MMBT2907A
-600mA
OT-23
MIL-STD-750
MMBT2907A
M7A transistor
transistor M7A
M7A MARKING SOT-23
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M7A transistor
Abstract: transistor M7A
Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)
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MMBT2907AW
-600mA
2002/95/EC
IEC61249
OT-323
OT-323
MIL-STD-750
M7A transistor
transistor M7A
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Untitled
Abstract: No abstract text available
Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)
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MMBT2907AW
OT-323
-600mA
2002/95/EC
IEC61249
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 150 mW FEATURES 0.087 2.20 0.074(1.90) • PNP epitaxial silicon, planar design 0.010(0.25) • Collector-emitter voltage VCE = -60V • Collector current IC = -600mA •/
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MMDT2907A
-600mA
OT-363
MIL-STD-750
2010-REV
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NL27WZ07
Abstract: diode dc components m7 footprint A114 A115 C101 JESD22 NL27WZ07DFT2G
Text: NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 1.65 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level.
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NL27WZ07
NL27WZ07
NL27WZ07/D
diode dc components m7 footprint
A114
A115
C101
JESD22
NL27WZ07DFT2G
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MVME167
Abstract: MVME-162-522 MVME162 battery problem VMEbus MVME-166 MVME162-522A MVME162 mvme VME System Controller MVME167A
Text: q q q r r s s s q r q r q s s r s u s q r u u r s s u u q r q s s r u s s u r q q r u u s s r q q r u u s s r s s r s s s q q r r r r r q q q q q q q r r European Synchrotron Radiation Facility installation europeenne de rayonnement synchrotron E.S.R.F. MVME-167 162
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MVME-167
MVME167
MVME-162
MVME-162
Mbug-16x
Mbug-16x
MVME-162-522
MVME162 battery problem
VMEbus
MVME-166
MVME162-522A
MVME162
mvme
VME System Controller
MVME167A
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M7A transistor
Abstract: transistor M7A Q62702-C2340
Text: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings
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OCR Scan
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Q62702-C2340
OT-23
0235bD5
235b05
fl235b05
M7A transistor
transistor M7A
Q62702-C2340
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12.696
Abstract: No abstract text available
Text: MF Series Surface Mount Low Profile Horizontal Chip Solvent Proof +85°C Maximum Temperature The MFseries are the standard low profile, surface mount capacitors from United Chemi-Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be seen from
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OCR Scan
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MOUNT-85
MF35FC1R5MA6
MF4FC33RMC6
120Hz)
MF35FC10RMD8
MF25FC33RMD13
12.696
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