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    MARKING MACOM Search Results

    MARKING MACOM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING MACOM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-730

    Abstract: C1995 DP83265
    Text: National Semiconductor Application Note 730 Robert Macomber Mark Travaglio November 1990 Table of Contents corresponding bits in the CMP register will be actually stored in STAR With the BSI device in ‘‘Stop Mode’’ and no intervening accesses to the BSI device Control Bus it is


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    PDF 20-3A AN-730 C1995 DP83265

    C3 1.2AGHZ

    Abstract: No abstract text available
    Text: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package 26 24 23 22 21 GND 33 20 GND VDD 34 19 VDD VDD 35 GND 36 GND BIAS BIAS 18 VDD 17 GND 37 16 GND


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    PDF TAT8804D1H C3 1.2AGHZ

    Untitled

    Abstract: No abstract text available
    Text: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 ohm amplifier 40 Pin 5x7 mm QFN Package General Description GND N/C GND N/C GND GND Pin Configuration The TAT8804 is an ultra-linear, QFN GaAs amplifier


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    PDF TAT8804D1H TAT8804

    Untitled

    Abstract: No abstract text available
    Text: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package General Description GND N/C GND N/C GND GND ILIN GND GND • 50 to 1000 MHz Bandwidth  Excellent High Output Linearity at Reduced Supply


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    PDF TAT8804D1H

    macom marking

    Abstract: MAcom device marking diode marking v6 V6 marking varactor diode
    Text: MAVR-000200 Series Low-Voltage / High Q Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SOT-23, SC70 3LD, SOD-323, SC-79 • High Q at Low Voltages • High Capacitance Ratio at Low Voltages • SPC Process for Superior C-V Repeatability


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    PDF MAVR-000200 OT-23, OD-323, SC-79) OD-323 SC-79 OD-323 macom marking MAcom device marking diode marking v6 V6 marking varactor diode

    10ACPR

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010LR1 MRF21010LSR1 10ACPR

    SOIC-08

    Abstract: macom marking ETC1-1-13 CGA6618 CGA-6618 CGA-6618Z macom rf amp ESOP-8 ESOP-8 Land pattern marking code macom
    Text: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases


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    PDF CGA-6618 CGA-6618Z CGA-6618 CGA6618 EDS-101994 SOIC-08 macom marking ETC1-1-13 CGA6618 CGA-6618Z macom rf amp ESOP-8 ESOP-8 Land pattern marking code macom

    psp 1004

    Abstract: smt LDR AN-964 C1995 DP83256 DP83266 ODU cross connection HL6 marking
    Text: National Semiconductor Application Note 964 Robert Macomber August 1994 1 0 INTRODUCTION This document describes features and mechanisms of the System Interface portion of National’s DP83200 FDDI chipset that are important for software designers to know about


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    PDF DP83200 DP83256A DP83266 DP83256 20-3A psp 1004 smt LDR AN-964 C1995 ODU cross connection HL6 marking

    capacitor 2200 micro M

    Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
    Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LSR1 macom marking

    MRF21010

    Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking

    marking code macom

    Abstract: Macom marking code macom marking MARKING CODE CGA CGA6618 CGA-6618 CGA-6618Z ETC1-1-13 SOIC-08 marking code 2- sirenza
    Text: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases


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    PDF CGA-6618 CGA-6618Z CGA-6618 CGA6618 EDS-101994 marking code macom Macom marking code macom marking MARKING CODE CGA CGA6618 CGA-6618Z ETC1-1-13 SOIC-08 marking code 2- sirenza

    C-XM-99-001-01

    Abstract: pep cxm MRF21010
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm

    MRF21010

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010 MRF21010LR1 MRF21010LSR1

    LDB20C

    Abstract: balun LDB20C LDB20C.201a CAP 0402 BCC-16 HPMX-7123 HPMX-7123-BLK HPMX-7123-TR1 res 0402 macom marking
    Text: Agilent HPMX-7123 Single-Band Downconverter Optimized for 1900 MHz PCS Applications Data Sheet Features • Wide band operation RF input: 0.4 – 2.4 GHz IF output: 50 – 400 MHz • High conversion gain 14 dB • 2.7 – 5.0 V operation General Description


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    PDF HPMX-7123 HPMX-7123 HPMX-7123-BLK HPMX-7123-TR1 BCC-16 5988-2008EN LDB20C balun LDB20C LDB20C.201a CAP 0402 HPMX-7123-BLK HPMX-7123-TR1 res 0402 macom marking

    macom marking

    Abstract: LDB20C LDB20C.201a MAcom device marking BCC-16 HPMX-7113 HPMX-7113-BLK HPMX-7113-TR1 CAP 0402 IND0402
    Text: Agilent HPMX-7113 Single-Band Downconverter Optimized for W-CDMA and Wireless Data Terminal Applications Data Sheet Features • Wide band operation RF input: 0.4 – 2.4 GHz IF output: 50 – 400 MHz • High conversion gain 12 dB • 2.7 – 3.6 V operation


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    PDF HPMX-7113 HPMX-7113 HPMX-7113-BLK HPMX-7113-TR1 BCC-16 5988-2007EN macom marking LDB20C LDB20C.201a MAcom device marking HPMX-7113-BLK HPMX-7113-TR1 CAP 0402 IND0402

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. – gt 03-02-10 R. MONNIN B Modify drawing to current requirements. - rrp 10-04-27 C. SAFFLE 12-04-25 C. SAFFLE Add device type 02 and case outline X. Make changes to TJ, θJC, and θJA


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    PDF ILIM10,

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. – gt 03-02-10 R. MONNIN B Modify drawing to current requirements. - rrp 10-04-27 C. SAFFLE 12-04-25 C. SAFFLE 13-04-26 C. SAFFLE Add device type 02 and case outline X. Make changes to TJ, θJC, and θJA


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    PDF ILIM10, 12lead

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.


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    PDF CGA-3318 CGA-3318 CGA3318 EDS-101993

    MACOM DATE CODE MARKING

    Abstract: No abstract text available
    Text: Preliminary Preliminary CGA-6618 Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction


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    PDF CGA-6618 CGA-6618 EDS-101994 MACOM DATE CODE MARKING

    marking code sirenza

    Abstract: MARKING CODE CGA
    Text: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.


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    PDF CGA-3318 CGA-3318 CGA3318 EDS-101993 marking code sirenza MARKING CODE CGA

    macom marking

    Abstract: No abstract text available
    Text: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration


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    PDF CGA-6618 CGA--6618 CGA-6618 CGA6618 EDS-101994 macom marking

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration


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    PDF CGA-6618 CGA--6618 CGA-6618 CGA6618 EDS-101994

    M1502

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1502 In teg rated GPS D ow nconverter This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motorola’s low-cost high performance MOSAIC 3 silicon bipolar process and is packaged in a low-cost surface mount


    OCR Scan
    PDF TQFP-48 MRFIC1502R2 M1502 MRFIC1502 MRFIC1502 AN1610, M1502

    toko VARIABLE CAPACITORS

    Abstract: diode p036 macom marking
    Text: i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1502 In teg rated GPS D ow nconverter This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motorola’s low-cost high performance MOSAIC 3 silicon bipolar process and is packaged in a low-cost surface mount


    OCR Scan
    PDF TQFP-48 MRFIC1502R2 M1502 MRFIC1502 MRFIC1502 AN1610, toko VARIABLE CAPACITORS diode p036 macom marking