amplifier mmic marking code n6
Abstract: MMIC Amplifier Micro-X marking g NBB-310 MMIC marking code R NBB-31 HEMT marking P mmic amplifier marking code N6
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: Micro-X, 4-Pin, Ceramic Features Reliable, Low-Cost HBT Design 13dB Gain GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50 I/O Matched for High Freq.
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NBB-310
12GHz
NBB-310
2002/95/EC
DS120130
amplifier mmic marking code n6
MMIC Amplifier Micro-X marking g
MMIC marking code R
NBB-31
HEMT marking P
mmic amplifier marking code N6
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amplifier mmic marking code n6
Abstract: NBB-300 NBB-310 NBB-310-D NBB-310-T1 NBB-400 NLB-300 NLB-310 marking nt gain stage GaAs MMIC AMPLIFIER mmic amplifier marking code N6
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features Reliable, Low-Cost HBT Design 13dB Gain GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50Ω I/O Matched for High Freq.
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NBB-310
12GHz
NBB-310
2002/95/EC
DS070327
amplifier mmic marking code n6
NBB-300
NBB-310-D
NBB-310-T1
NBB-400
NLB-300
NLB-310
marking nt gain stage GaAs MMIC AMPLIFIER
mmic amplifier marking code N6
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Untitled
Abstract: No abstract text available
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features Reliable, Low-Cost HBT Design 13dB Gain GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50Ω I/O Matched for High Freq.
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NBB-310
12GHz
NBB-310
2002/95/EC
DS070123
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n7 transistor
Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
n7 transistor
marking n5 amplifier
N6 Amplifier
marking n6 transistor
amplifier marking code n6
transistor N6
marking N7
2SC1654
sot-23 Marking N5
Marking N5
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SC1654
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NGA-686
Abstract: N6 Amplifier marking N6 mmic amplifier marking n6 marking n6 transistor HBT marking P MMIC N6
Text: Preliminary Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-686
NGA-686
DC-6000
EDS-101106
N6 Amplifier
marking N6 mmic
amplifier marking n6
marking n6 transistor
HBT marking P
MMIC N6
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NGA-686
Abstract: No abstract text available
Text: Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-686
NGA-686
DC-6000
EDS-101106
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Untitled
Abstract: No abstract text available
Text: Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-686
NGA-686
DC-6000
AN-059
EDS-101106
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marking n6 amplifier
Abstract: SIRENZA MARKING
Text: Preliminary NGA-689 Product Description Sirenza Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-689
NGA-689
DC-5000
AN-059
EDS-101442
marking n6 amplifier
SIRENZA MARKING
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SIRENZA MARKING
Abstract: No abstract text available
Text: Preliminary NGA-689 Product Description Sirenza Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-689
NGA-689
DC-5000
AN-059
EDS-101442
SIRENZA MARKING
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NGA-689
Abstract: 4n63
Text: Preliminary Preliminary NGA-689 Product Description Sirenza Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-689
NGA-689
DC-5000
1950Mhz
GaAs522
EDS-101442
4n63
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N6 marking code
Abstract: marking 210 N6 Amplifier amplifier marking code n6 marking n6 amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 2 2 BASE 1 EMITTER 1 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MSD601
MSD601-RT1
MSD601-ST1
N6 marking code
marking 210
N6 Amplifier
amplifier marking code n6
marking n6 amplifier
N6 marking diode
MSD601-RT1
MSD601-ST1
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N6 marking code
Abstract: marking n6 transistor N6 Amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1 amplifier marking code n6 marking n6
Text: NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous
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MSD601
MSD601-RT1
MSD601-ST1
N6 marking code
marking n6 transistor
N6 Amplifier
N6 marking diode
MSD601-RT1
MSD601-ST1
amplifier marking code n6
marking n6
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2SC1654
Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Text: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application Power Switching Applications A L 3 3
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2SC1654
OT-23
2SC1654-N5
2SC1654-N6
2SC1654-N7
18-Feb-2011
2SC1654
N5 npn transistor
n7 transistor
2SC1654N5
marking n5 amplifier
sot-23 Marking N5
marking n6
2SC1654N7
amplifier marking code n6
marking n6 transistor
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MMIC Amplifier Micro-X marking 420
Abstract: MMIC Amplifier Micro-X marking d 12ghz marking N6 mmic
Text: NBB-310 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-310
NBB-310
MMIC Amplifier Micro-X marking 420
MMIC Amplifier Micro-X marking d 12ghz
marking N6 mmic
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micro-x 420
Abstract: No abstract text available
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-310
NBB-310
NBB-310-D)
micro-x 420
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Untitled
Abstract: No abstract text available
Text: NBB-310 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-310
12GHz
NBB-310
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Untitled
Abstract: No abstract text available
Text: NBB-310 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-310
12GHz
NBB-310
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MMIC Amplifier Micro-X marking 420
Abstract: MMIC Amplifier Micro-X marking d 12ghz
Text: NBB-310 RoHS & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-310
NBB-310
NBB-310-D
MMIC Amplifier Micro-X marking 420
MMIC Amplifier Micro-X marking d 12ghz
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Untitled
Abstract: No abstract text available
Text: NBB-310 &$6&$'$%/ %52$'%$1' *D$V 00,& $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ • Linear and Saturated Amplifiers
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NBB-310
NBB-310
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power one pmp 3.24
Abstract: MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT
Text: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm
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NLB-310Cascadable
10GHz
NLB-310
NLB-310
DS060412
power one pmp 3.24
MARKING N6 RFMD
MMIC N6
MARKING RFMD
amplifier marking n6
MMIC Amplifier marking D
MMIC Amplifier Micro-X marking D
10GHZ GAAS
10GHz mmic
100GHz BJT
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Untitled
Abstract: No abstract text available
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-310
12GHz
NBB-310
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity
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HN1C01F
150mA
100mA,
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