marking N91
Abstract: No abstract text available
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO692 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB
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SO642
SO692
OT-23
marking N91
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Untitled
Abstract: No abstract text available
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO692 APPLICATIONS
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SO642
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SO692
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marking N91
Abstract: PNP Epitaxial Silicon Transistor sot-23 SO642 SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS
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SO642
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SO692
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marking N91
PNP Epitaxial Silicon Transistor sot-23
SO642
SO692
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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Untitled
Abstract: No abstract text available
Text: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS
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SO642
OT-23
SO692
OT-23
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Untitled
Abstract: No abstract text available
Text: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS
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SO642
OT-23
SO692
OT-23
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multicolor led 2-pin
Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Text: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .
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diamond sx 600
Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Text: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13
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LCBT67S
Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
Text: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.
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RESISTOR NETWORK SMD 8 PIN array isolated 2512
Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011
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88EM8011
MV-S104861-00,
88EM8011
MV-S104861-00
RESISTOR NETWORK SMD 8 PIN array isolated 2512
MILMAX MACHINE
marking code EA SMD MOSFET
MOSFET marking smd NU
Zener diode smd marking code nu
prestera package marking
semiconductor smd marking codes
diode SMD MARKING CODE 606
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STR G 8654
Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
Text: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
2601NZ
2601N
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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FDW2601NZ
Abstract: N-Channel 2.5V 2601NZ
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
N-Channel 2.5V
2601NZ
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2601NZ
Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
2601NZ
47e3
Diode N7 S2
N9 S2 MARKING DIODE
096E-9
dual mosfet 337
Dual N-Channel 2.5V
17E-3
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3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
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S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
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diode t 4148
Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
FDLL4148
FDLL4448
diode t 4148
TI 4148
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BF520
Abstract: bf519 S0642 BF654 S0692 BFS18 BF517 BF599 BFR92A BFS17
Text: SURFACE-M O UNTED DEVICES R A D IO F R E Q U E N C Y T R A N S IS T O R S Types ★SO 91 8 'HI ★BFS17 <R>m ★BFR92A R + BFR93A IR) B FS18 <R) ★BFS19 IR) BF654 *B FS 2 0 IR) BF599 ♦S0642 ★S0692 Pola rity N N N N N N N N N N P Maxim um ratings Marking
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BFS17
BFR92A
BFH93A
BFS18
BFS19
BF654
BF520
bf519
S0642
BF654
S0692
BFS18
BF517
BF599
BFR92A
BFS17
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marking p32
Abstract: Marking P33 SO5400 So642 BFN22 NPN 2907 J33 IC
Text: rZ 7 SGS-THOMSON SURFACE MOUNT DEVICES Ä 7 # HDË @li[LI gra(Q (fi(lD(Si GENERAL PURPOSE & INDUSTRIAL PNP MEDIUM CURRENT SWITCHING AND LOW FREQUENCY APPLICATION TRANSISTORS Type VC BO VCEO *C ptot hFE @ lc ' v CE VCE (sat) @ 'C / Iß max BSR 15 BSR 16 SO 2906
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SO4403
Abstract: F5GL marking n20 So642 SO3903
Text: S G S— THOMSON 71C D 1 7 ^ E CÎR37 0 0 0 4 ^ 1 , 3 | THOÎÏÎSOM SEMICONDUCTORS_ ' T - J r - // y . 3A f & switching transistors Characteristics at 2 5 °C Maximum Type« ratings NPN PNP p »o» VCEO (mWJ (V) 200 12 h2lE@ le min BSV 52
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bcw 918
Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
bcw 918
SO3572R
transistor NB B4 marking
BSR16R
BCW General Purpose Transistor
2907A BF
BFr pnp transistor
2907A
ses 554
Switching transistor 50115
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1N914
Abstract: N914A N914B 1N914B 1N914-1
Text: 1N914 / 1N914A / 1N914B FAST SWITCHING DIODE Features Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications T D Mechanical Data_ • • • • DO-35 Case: D O -35, Glass Terminals: Solderable per M IL-STD-202,
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1N914
1N914A
1N914B
IL-STD-202,
DO-35
Current10mA
DS22001
N914A
N914B
N914B
1N914B
1N914-1
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