MGA-85563-BLK
Abstract: MGA-85563 rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • Lead-free Option Available Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
5968-6303E
5989-1799EN
MGA-85563-BLK
rfics marking 76
A004R
MGA-85563-TR1
NF50
marking CODE GA sot363
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5967-5769E
Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5965-8921E
5967-5769E
5967-5769E
class D power amplifier 6.78 MHz
a006
INA-32063-BLK
NF50
marking 320 SOT-363
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ina 333 amplifier
Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5967-5769E
ina 333 amplifier
a006
INA-32063-BLK
NF50
AN-A006
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Untitled
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
OT-363
OT-143
sin017)
MGA-85563-TR1
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marking code ga sot 363
Abstract: rfics marking 5 rfics marking 76 MGA-85563 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
5966-4894E
5968-6303E
marking code ga sot 363
rfics marking 5
rfics marking 76
MGA-85563-BLK
MGA-85563-TR1
NF50
marking 34 sot-363 rf
sot143 TOP marking
mga 017
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Low Noise Gaas
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
OT-363
OT-143
5966-4894E
5968-6303E
Low Noise Gaas
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Untitled
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for␣ 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
MGA-85563-TR1
MGA-85563-BLK
5966-3109E
5966-4894E
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Untitled
Abstract: No abstract text available
Text: BGB717L7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.4, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BGB717L7ESD
BGB717L7ESD:
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Untitled
Abstract: No abstract text available
Text: BGB719N7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BGB719N7ESD
BGB719N7ESD:
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BFR840L3RHESD
Abstract: Germanium Transistor LNA ku-band
Text: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFR840L3RHESD
BFR840L3RHESD:
BFR840L3RHESD
Germanium Transistor
LNA ku-band
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Untitled
Abstract: No abstract text available
Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFR840L3RHESD
BFR840L3RHESD:
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rf transistor frequency 10.0GHz gain 20 dB
Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFR840L3RHESD
BFR840L3RHESD:
rf transistor frequency 10.0GHz gain 20 dB
10.0GHZ TRANSISTOR AMPLIFIER
ku-band lnb
SiGe Microsystems
LNA ku-band
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Untitled
Abstract: No abstract text available
Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Target Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFR843EL3
BFR843EL3:
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Germanium Transistor
Abstract: 2.4GHz Power Amplifier transistor
Text: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFR720L3RH
Germanium Transistor
2.4GHz Power Amplifier transistor
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|
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Untitled
Abstract: No abstract text available
Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices Edition 2014-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.
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BFR843EL3
TSLP-3-10-PO
TSLP-3-10-FP
BFR843EL3:
TSLP-3-10-TP
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Untitled
Abstract: No abstract text available
Text: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFR720L3RH
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Untitled
Abstract: No abstract text available
Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-06-04 RF & Protection Devices Edition 2014-06-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.
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BFR843EL3
TSLP-3-10-PO
TSLP-3-10-FP
BFR843EL3:
TSLP-3-10-TP
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Untitled
Abstract: No abstract text available
Text: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFR740L3RH
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Untitled
Abstract: No abstract text available
Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-07-04 RF & Protection Devices Edition 2014-07-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.
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BFR843EL3
TSLP-3-10-PO
TSLP-3-10-FP
BFR843EL3:
TSLP-3-10-TP
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Untitled
Abstract: No abstract text available
Text: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFR740L3RH
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LNA ku-band
Abstract: No abstract text available
Text: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG
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BFR840L3RHESD
BFR840L3RHESD:
LNA ku-band
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Untitled
Abstract: No abstract text available
Text: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFR720L3RH
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BGA628L7
Abstract: No abstract text available
Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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BGA628L7
BGA628L7
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BGA628L7
Abstract: XPOSYS 628L C166 JESD22-A114 NF50
Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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BGA628L7
BGA628L7
XPOSYS
628L
C166
JESD22-A114
NF50
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