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    MARKING OF M7 DIODES Search Results

    MARKING OF M7 DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING OF M7 DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1414

    Abstract: IEC61000-4
    Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD6.2MF LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DUAL TYPE: COMMON ANODE 3-PIN MINI MOLD This product is a low capacitance type diode developed for E.S.D. (Electrostatic Discharge)


    Original     		PDF IEC61000-4-2 D1414 IEC61000-4

    diode SMD MARKING CODE K6

    Abstract: bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product specification Supersedes data of 2003 Apr 01 2004 Mar 22 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF BZX384 OD323 SC-76) MAM387 SCA76 R76/02/pp11 diode SMD MARKING CODE K6 bzx 79 6v2 BZX 6v8 part marking b36 smd diode smd diode marking code d7 SMD CODE M8 smd marking m4 DIODE smd marking N7 bzx 29 C18 BZX384-C5V1/D5

    m7 smd diodes NXP

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF BZX384 OD323 SC-76) MAM387 R76/02/pp11 m7 smd diodes NXP m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3

    marking of m7 diodes

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


    Original     		PDF M3D049 BZX384 OD323 SCA75 613514/01/pp12 marking of m7 diodes m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G


    Original     		PDF L2SA812 L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G

    zener Marking K7

    Abstract: MARKING H7 SOD-123
    Text: MMSZ5225-V-G to MMSZ5267-V-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance


    Original     		PDF MMSZ5225-V-G MMSZ5267-V-G MMSZ5225B-V-G) AEC-Q101 2002/95/EC 2002/96/EC MMBZ5267-V-G zener Marking K7 MARKING H7 SOD-123

    MMSZ5231-V

    Abstract: MMSZ5251-V zener Marking K7 MMSZ5226-V SOD-123 marking code H7 m7 sod123 MMSZ5243-V D8 marking, SOD123 marking code m7 f6 MMSZ5254-V
    Text: MMSZ5225-V-G to MMSZ5267-V-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance


    Original     		PDF MMSZ5225-V-G MMSZ5267-V-G MMSZ5225B-V-G) AEC-Q101 2002/95/EC 2002/96/EC MMBZ5267-V-G MMSZ5231-V MMSZ5251-V zener Marking K7 MMSZ5226-V SOD-123 marking code H7 m7 sod123 MMSZ5243-V D8 marking, SOD123 marking code m7 f6 MMSZ5254-V

    B2BB1

    Abstract: iz 220 RD10M RD11M RD12M RD13M RD15M RD16M RD47M 7M marking
    Text: DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0M to RD47M Series are planar type zener diodes Unit: mm processing an allowable power dissipation of 200 mW. 2.8 ± 0.2 Planar process 0.65 +0.1


    Original     		PDF RD47M RD47M B2BB1 iz 220 RD10M RD11M RD12M RD13M RD15M RD16M 7M marking

    PE9704

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION PE9704 3.0 GHz Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9704 is a high-performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The device is designed for superior phase noise performance


    Original     		PDF PE9704 PE9704 44-lead 44-pin

    RD10MW

    Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD39MW RD4.7MW
    Text: DATA SHEET ZENER DIODES RD2.0MW to RD39MW ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0MW to RD39MW Series are 3-PIN Mini Mold Package Unit: mm zener diodes possessing allowable power dissipation of 200 mW. 2.8 ± 0.2 +0.1


    Original     		PDF RD39MW RD39MW RD10MW RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD4.7MW

    RD10JS

    Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
    Text: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing


    Original     		PDF RD39JS DO-34 DO-34; RD39JS RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS 2JS marking NEC RD4.7JS RD5.1JS

    PJDLC05C

    Abstract: No abstract text available
    Text: PJDLC05C-02TB POWER 200 Watts This transient overvoltage suppressor is intended to protect sensitive equipment against electrostatic discharge events as well to offer a minimum insertion loss in data transmission lines in communications ports used in portable consumer, computing and networking applications. This


    Original     		PDF PJDLC05C-02TB OT-523, inDLC05C-02TB OT-523 2011-REV PJDLC05C

    CQFJ

    Abstract: PE9704 9704-01
    Text: Product Specification PE9704 3000 MHz UltraCMOS Integer-N PLL Rad Hard for Space Applications Product Description Peregrine’s PE9704 is a high-performance integer-N PLL capable of frequency synthesis up to 3000 MHz. The device is designed for superior phase noise performance


    Original     		PDF PE9704 PE9704 CQFJ 9704-01

    M7 DIODE POLARITY

    Abstract: DIODE M7 marking M7 DIODE MARKING
    Text: SGS-THOMSON IM O M iL iig ra fM O O S B Y W 9 9 P /P I/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . . . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY


    OCR Scan     		PDF BYW99PI-200 T0247 BYW99P-200 T024ns M7 DIODE POLARITY DIODE M7 marking M7 DIODE MARKING

    BSS66

    Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
    Text: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these


    OCR Scan     		PDF BSS66 BSS67 BSS69 BSS70. OT-23 BSS66& BSS67 FMMT2222 FMMT2369A cg 5763 BSS66R BSS67R FMMT2369 BFQ31 160i BC 5763

    hsmp-3800

    Abstract: marking 550 SOT143
    Text: warn HEWLETT mHEM PA CK A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and


    OCR Scan     		PDF HSMP-38XX HSMP-48XX OT-23 OT-143 HSMP-4810 RS-481, hsmp-3800 marking 550 SOT143

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23

    marking of m7 diodes

    Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
    Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan     		PDF BCX19 BCX20 BCX17 BCX18. OT-23 BCX20 FMMT-A13 FMMT-A14 marking of m7 diodes ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


    OCR Scan     		PDF BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    marking 31A sot-23

    Abstract: marking 31A BFQ31 marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH
    Text: FERRANTI * semiconductors BFQ31 BFQ31A NPN Silicon Planar V H F /U H F Transistors DESCRIPTION These devices are intended fo r lo w noise, high frequency am plifier and o scillator applications. Encapsulated in the popular SOT-23 package these devices are designed sp ecifically fo r use in thin and thick film


    OCR Scan     		PDF BFQ31 BFQ31A OT-23 BFQ31/BFQ31A FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B marking 31A sot-23 marking 31A marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH

    BCX17

    Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
    Text: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices


    OCR Scan     		PDF BCX17 BCX18 BCX19 BCX20. OT-23 BCX18 FMMT-A13 FMMT-A14 BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R

    sot-23 MARKING CODE ZA

    Abstract: marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A
    Text: i FERRANTI T II semiconductorsL BSS79B, C NPN Silicon Planar General P urpose S w itc h in g T ra n sistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n ap plication s fro m d.c. to radio frequencies. Encapsulated in the popular SOT-123 package the device is


    OCR Scan     		PDF BSS79B, OT-23 Curren00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B sot-23 MARKING CODE ZA marking code AD B557 BSS79C BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A

    TR MARKING 6t sot23

    Abstract: ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 BSS82B
    Text: semiconductors *FERRANTI BSS82B, C PNP Silicon Planar General Purpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in sm all and m edium signal a m p lifica tio n a p plication s fro m d.c. to radio frequencies. Encapsulated in th e po pu lar SOT-23 package th e device is


    OCR Scan     		PDF BSS82B, OT-23 Curren00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B TR MARKING 6t sot23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20