marking PB
Abstract: KRA302E
Text: SEMICONDUCTOR KRA302E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PB No. 2000. 12. 27 Item Marking Description Device Mark PB KRA302E hFE Grade - - Revision No : 0 1/1
|
Original
|
PDF
|
KRA302E
marking PB
KRA302E
|
KRA302
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA302 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PB 1 2 Item Marking Description Device Mark PB KRA302 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KRA302
KRA302
|
KRA102S
Abstract: kra102s equivalent KRA102 2ndyear
Text: SEMICONDUCTOR KRA102S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PB 1 2 Item Marking Description Device Mark PB KRA102S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KRA102S
OT-23
KRA102S
kra102s equivalent
KRA102
2ndyear
|
KRA552U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA552U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA552U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
|
Original
|
PDF
|
KRA552U
KRA552U
|
MARKING PB
Abstract: KRA752U
Text: SEMICONDUCTOR KRA752U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA752U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA752U
MARKING PB
KRA752U
|
KRA752E
Abstract: marking PB
Text: SEMICONDUCTOR KRA752E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA752E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA752E
KRA752E
marking PB
|
KRA552E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA552E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PB KRA552E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
KRA552E
KRA552E
|
kl4 diode
Abstract: kl3 diode kl2 diode kl2 marking kl4 transistor BAT54C KL3 DC marking 08 sot-23 BAT54 BAT54A BAT54C
Text: BAT54 SCHOTTKY DIODES SOT-23 PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Diodes FEATURES Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25 oC Parameter
|
Original
|
PDF
|
BAT54
OT-23
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100Aeliness
kl4 diode
kl3 diode
kl2 diode
kl2 marking
kl4 transistor
BAT54C KL3 DC
marking 08 sot-23
|
C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
|
Original
|
PDF
|
1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
|
marking code vishay label
Abstract: origin capacitor jedec code VISHAY MARKING CODE COUNTRY OF ORIGIN capacitor package Vishay capacitor code marking IEC 60068-1 marking code diode 04 transistor country code
Text: Package Marking Vishay BCcomponents Package Marking PACKAGE MARKING The Capacitor Package Marking is detailed as below: BARCODE LABEL MARKING LINE MARKING EXPLANATION 1 Manufacturer's name 2 3 Country of origin Sub-family 4 5 6 Type description Capacitance value in µF, tolerance, voltage and climatic
|
Original
|
PDF
|
19-Oct-04
marking code vishay label
origin
capacitor jedec code
VISHAY MARKING CODE
COUNTRY OF ORIGIN
capacitor package
Vishay capacitor code marking
IEC 60068-1
marking code diode 04
transistor country code
|
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
|
BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
|
Original
|
PDF
|
1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
PDF
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
Untitled
Abstract: No abstract text available
Text: precision 0.5%, 1% tolerance thick film chip resistor EU features • Marking: 1F, 1H: no marking, black body 1E: blue body, no marking 1J: three-digit black marking E-24 only on blue protective coat. 2A ~ 3A four-digit black marking on blue protective coat.
|
Original
|
PDF
|
AEC-Q200
C/-55Â
|
|
|
marking W2H
Abstract: MARKING 1F 1F marking
Text: resistors RK73H precision 0.5%, 1% tolerance thick film chip resistor EU features • Marking: 1F, 1H, no marking, black body. 1E: blue body, no marking 1J: three-digit black marking E-24 only on blue protective coat. 2A ~ 3A four-digit black marking on blue protective coat.
|
Original
|
PDF
|
RK73H
AEC-Q200
C/-55
marking W2H
MARKING 1F
1F marking
|
Untitled
Abstract: No abstract text available
Text: resistors RK73H precision 0.5%, 1% tolerance thick film chip resistor EU features • Marking: 1F, 1H, no marking, black body. 1E: blue body, no marking 1J: three-digit black marking E-24 only on blue protective coat. 2A ~ 3A four-digit black marking on blue protective coat.
|
Original
|
PDF
|
RK73H
AEC-Q200
C/-55Â
|
2xxxx-PCN-007-A
Abstract: M21121G-11 M27479G-12 mindspeed M27479G-12 M21111G-11 M21121 28236-12 M27479-12 m21111g 28236G-12
Text: July 10, 2008 CN071008 Customer Notification ASE PBGA Marking Change Dear Valued Customer: This notification is for the purpose of informing you that Mindspeed is changing from ink marking to laser marking for products manufactured by ASE in PBGA packages.
|
Original
|
PDF
|
CN071008
M21111-11
M21111G-11
M21121-11
M21121G-11
M27479-12
M27479G-12
M27480-12
M27480G-12
M2748ave
2xxxx-PCN-007-A
M21121G-11
M27479G-12
mindspeed M27479G-12
M21111G-11
M21121
28236-12
M27479-12
m21111g
28236G-12
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
|
Original
|
PDF
|
LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
|
sod-23
Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Text: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C
|
Original
|
PDF
|
BAV70
OT-23
OD-23
BAW56
BAV70
BAV99
sod-23
diode sod23
SOD 23
marking a7
SOD23
marking A4
marking A1
diode marking a4
MARKING A4 transistor
SILICON SWITCHING DIODE
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
|
PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
|
Original
|
PDF
|
BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
|
Original
|
PDF
|
LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
|
Untitled
Abstract: No abstract text available
Text: resistors SR73 lo-ohm 0.5%, 1%, 2%, 5% tolerance thick film current sense resistor EU features • Marking: 1H: no marking on black protective coating 1E, 1J: No marking on indigo protective coating. 2A~W3A: three or four digit marking on indigo protective coating.
|
Original
|
PDF
|
AEC-Q200
060our
C/-55Â
|
