marking PK
Abstract: KRA110S marking pk sot
Text: SEMICONDUCTOR KRA110S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PK 1 2 Item Marking Description Device Mark PK KRA110S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA110S
OT-23
marking PK
KRA110S
marking pk sot
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PDF
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BAT400D
Abstract: No abstract text available
Text: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 1 2 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)
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BAT400D
OT-23
BAT400D
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PDF
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BAT400D
Abstract: MARKING CODE PK pk sot-23 MARKING CODE PK sot-23
Text: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 2 1 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)
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Original
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BAT400D
OT-23
BAT400D
MARKING CODE PK
pk sot-23
MARKING CODE PK sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is
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Original
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BC856AWT1
BC857BWT1
BC858AWT1
323/SC
BC856AWT1
BC856BWT1
BC857BWT1
BC857CWT1
BC858AWT1
BC858BWT1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount
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Original
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LBC856AWT1G,
LBC857AWT1G,
LBC858AWT1G,
BC856
BC857
BC858
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PDF
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BC847 SOT363
Abstract: BC847 dual marking 1F BC557 BC557 bc556 marking pk sot
Text: BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
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Original
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BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
OT-363/SC-88
BC846BDW1T1
BC847BDW1T1
BC848CDW1T1
BC846
BC847
BC848
BC847 SOT363
BC847 dual marking 1F
BC557
BC557 bc556
marking pk sot
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PDF
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BC847 dual marking 1F
Abstract: No abstract text available
Text: BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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Original
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BC846BDW1T1,
BC847BDW1T1
BC848BDW1T1
363/SC
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
BC846
BC847 dual marking 1F
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PDF
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BC557 bc556
Abstract: bc557 BC556 BC858CDW1T1
Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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Original
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BC856BDW1T1,
BC857BDW1T1
BC858BDW1T1
363/SC
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
BC856
BC557 bc556
bc557
BC556
BC858CDW1T1
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PDF
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BC557
Abstract: BC557 bc556 bc857 sot363 marking code 04 sot-363 marking 3b sot363 PNP BC558 BC858CDW1T1
Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is
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Original
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BC856BDW1T1,
BC857BDW1T1
BC858BDW1T1
OT-363/SC-88
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
BC856
BC557
BC557 bc556
bc857 sot363
marking code 04 sot-363
marking 3b sot363
PNP BC558
BC858CDW1T1
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PDF
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SAT MARKING P
Abstract: LBC848BDW1T1G LBC847CDW1T1G LBC847BDW1T1G BC846 BC847 BC848 dual BC847 LBC847CDW1T1 bc846 SOT363
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC846BDW1T1G
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Original
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363/SC
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
OT-363
/SC-88
BC846
BC847
SAT MARKING P
LBC848BDW1T1G
LBC847CDW1T1G
LBC847BDW1T1G
BC846
BC847
BC848
dual BC847
LBC847CDW1T1
bc846 SOT363
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
363/SCâ
OT-363
/SC-88
BC846
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PDF
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LBC846ADW1T1G
Abstract: BC847 dual marking 1F BC848 BC846 BC847 BC847 dual 1G1K
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
363/SC
OT-363
/SC-88
BC846
LBC846ADW1T1G
BC847 dual marking 1F
BC848
BC846
BC847
BC847 dual
1G1K
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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LBC85*
S-LBC85*
363/SCâ
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
LBC858CDW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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LBC85*
S-LBC85*
363/SCâ
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
LBC858CDW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G
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363/SCâ
LBC85*
S-LBC85*
AEC-Q101
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is
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LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
363/SCâ
LBC848CDW1T1G
S-LBC846ADW1T1G
S-LBC846BDW1T1G
S-LBC847BDW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. S-LBC846ADW1T1G
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363/SCâ
S-LBC846ADW1T1G
S-LBC846BDW1T1G
S-LBC847BDW1T1G
S-LBC847CDW1T1G
S-LBC848BDW1T1G
S-LBC848CDW1T1G
LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
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PDF
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operation of BC557 TRANSISTOR
Abstract: bc557 LBC856BDW1T1 sot-36
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC856*DW1T1 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking:
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LBC856
363/SC
LBC856BDW1T1
LBC857BDW1T1
LBC857CDW1T1
LBC858BDW1T1
LBC858CDW1T1
OT-363
BC856
BC857
operation of BC557 TRANSISTOR
bc557
LBC856BDW1T1
sot-36
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with
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363/SCâ
AEC-Q101
LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
S-LBC846ADW1T1G
S-LBC846BDW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.
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363/SCâ
AEC-Q101
LBC85*
S-LBC85*
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.
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LBC85*
363/SCâ
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
LBC858CDW1T1G
BC856
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PDF
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LBC856BDW1T1G
Abstract: LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.
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LBC85*
363/SC
OT-363
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
LBC858CDW1T1G
BC856
BC857
LBC856BDW1T1G
LBC857CDW1T1G
LBC858BDW1T1G
BDW1T1G
BC856
BC857
BC858
BC858CDW1T1G
BDW1T1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G
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363/SCâ
LBC85*
S-LBC85*
AEC-Q101
OT-363
LBC856ADW1T1G=
LBC856BDW1T1G=
LBC857BDW1T1G=
LBC857CDW1T1G=
LBC858BDW1T1G=
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is
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Original
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LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
363/SCâ
AEC-Q101
S-LBC846ADW1T1G
S-LBC846BDW1T1G
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PDF
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