EIA-364-31
Abstract: EIA-364-27 EIA364-31 EIA-364-6 EIA-364-21 EIA-364-20 EIA J code marking SJS830270 EIA364-26 eia marking code
Text: SJS830250 I REV I ECN I APP'D~ 6431 HITE MARKING 0.040" HIGH CHARACTERS WHITE DOT 1 1/ r U; i |Jj{ J_ -QJ HITE MARKING ì n .il .322 .UNLOCK 1 WHITE MARKING ! - TES .077 i005 -.010 .242 TEST REQUIREMENT TEST METHOD MIL-STD-1344 SUPERSEDED BY EIA 364
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SJS830250
SJS830250
MIL-STD-1344
EIA-364-6)
EIA-364-20)
SJS830270
SIZE22
15-Jan-09
EIA-364-31
EIA-364-27
EIA364-31
EIA-364-6
EIA-364-21
EIA-364-20
EIA J code marking
EIA364-26
eia marking code
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10M1TR
Abstract: DTC143TKA
Text: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ
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DTC143TE
DTC143TUA
DTC143TKA
SC-70)
SC-59)
DTC143TE,
DTC143TUA,
DTC143TKA;
DTC143TE
10M1TR
DTC143TKA
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G S-LMBT6517LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information Device LMBT6 517LT1G S-LMBT6 517LT1G LMBT6517LT3G S-LMBT6517LT3G Marking
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LMBT6517LT1G
S-LMBT6517LT1G
517LT1G
LMBT6517LT3G
S-LMBT6517LT3G
3000/Tape
10000/Tape
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485G
Abstract: PRBS23
Text: NB7VPQ16M 1.8V/2.5V CML 12.5 Gbps Programmable Pre-Emphasis Copper/Cable Driver with Selectable Equalizer Receiver http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description 16 The NB7VPQ16M is a high performance single channel
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NB7VPQ16M
NB7VPQ16M
NB7VPQ16M/D
485G
PRBS23
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marking code V6 DIODE
Abstract: marking code v6 SOT23 SOt23-5 footprint wave soldering U1500 marking code V6 V6 marking code diode 3.GND SOT-23 On semiconductor date Code tsop-5 MC74VHC04 MC74VHC1G04
Text: MC74VHC1GU04 Single Unbuffered Inverter http://onsemi.com MARKING DIAGRAMS 5 M The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination
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MC74VHC1GU04
MC74VHC1GU04
MC74VHCU04
MC74VHC1G04
MC74VHC04
MC74VHC1GU04/D
marking code V6 DIODE
marking code v6 SOT23
SOt23-5 footprint wave soldering
U1500
marking code V6
V6 marking code diode
3.GND SOT-23
On semiconductor date Code tsop-5
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485G
Abstract: NB7V72MMNG NB7V72MMNHTBG PRBS23
Text: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential
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NB7V72M
NB7V72M
NB7V72M/D
485G
NB7V72MMNG
NB7V72MMNHTBG
PRBS23
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qfn16 thermal resistance
Abstract: 485G NB7V72MMNG PRBS23
Text: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential
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NB7V72M
NB7V72M
NB7V72M/D
qfn16 thermal resistance
485G
NB7V72MMNG
PRBS23
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Untitled
Abstract: No abstract text available
Text: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential
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NB7L72M
NB7L72M
NB7L72M/D
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Untitled
Abstract: No abstract text available
Text: NB7VPQ16M 1.8V/2.5V CML 12.5 Gbps Programmable Pre-Emphasis Copper/Cable Driver with Selectable Equalizer Receiver http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description 16 The NB7VPQ16M is a high performance single channel
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Original
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NB7VPQ16M
NB7VPQ16M
NB7VPQ16M/D
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M74VHC1GT125DF1G
Abstract: M74VHC1GT125DF2G M74VHC1GT125DT M74VHC1GT125
Text: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 M The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed
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MC74VHC1GT125
MC74VHC1GT125/D
M74VHC1GT125DF1G
M74VHC1GT125DF2G
M74VHC1GT125DT
M74VHC1GT125
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LMBT6520LT1G
Abstract: DATA56
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel
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LMBT6520LT1G
3000/Tape
LMBT6520LT3G
10000/Tape
OT-23
LMBT6520LT1G
DATA56
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485G
Abstract: NB7L72MMNG PRBS23
Text: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential
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Original
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NB7L72M
NB7L72M
NB7L72M/D
485G
NB7L72MMNG
PRBS23
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Untitled
Abstract: No abstract text available
Text: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential
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Original
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NB7L72M
QFN-16
NB7L72M/D
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Untitled
Abstract: No abstract text available
Text: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential
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Original
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NB7V72M
NB7V72M
NB7V72M/D
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marking 82 sot343
Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Text: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR
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BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
marking 82 sot343
zo 103 ma
DIN45004B
MS80
Ghz dB transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Q62702-F1776
OT-343
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MC14053
Abstract: MC14053 application 948F HC4053 MAX4053 MAX4053A MC74HC4053 NLAS4053
Text: NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS
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NLAS4053
NLAS4053
MC14053
MC74HC4053
SOIC-16
MC14053 application
948F
HC4053
MAX4053
MAX4053A
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Untitled
Abstract: No abstract text available
Text: NB7L1008 2.5V / 3.3V 1:8 LVPECL Fanout Buffer Multi−Level Inputs w/ Internal Termination http://onsemi.com Description MARKING The NB7L1008 is a high performance differential 1:8 Clock/Data fanout buffer. The NB7L1008 produces eight identical output copies
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NB7L1008
NB7L1008
NB7L1008/D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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62702-F1774
T-343
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PDF
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BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
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BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
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V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures
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BFG520W
BFG520W/X;
BFG520W/XR
OT343
OT343R
BFG520W/X
BFG520W/XR
7110fli
V 904 RL 805
N4 TAM
transistor fp 1016
DIN45004B
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PDF
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NLAS4053G
Abstract: No abstract text available
Text: NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS http://onsemi.com MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS
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NLAS4053
MC14053
MC74HC4053
NLAS4053/D
NLAS4053G
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marking code g1s
Abstract: marking g1s marking G2s
Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Q62702-F1774
OT-343
marking code g1s
marking g1s
marking G2s
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Untitled
Abstract: No abstract text available
Text: NB7L1008 2.5V / 3.3V 1:8 LVPECL Fanout Buffer Multi−Level Inputs w/ Internal Termination http://onsemi.com Description MARKING The NB7L1008 is a high performance differential 1:8 Clock/Data fanout buffer. The NB7L1008 produces eight identical output copies
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NB7L1008
NB7L1008
NB7L1008/D
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