marking JY sot-23
Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40
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SR520G-30
OD-723
SR651H-40
OD-323
SR521G-30
BAT54T
OT-416
SR751G-40
marking JY sot-23
sot-23 Marking 3D
BAT34
LV4, SMD
SOT-346
sot-23 Marking B1
SR715F
SMD23
bat54 sot-323
B4 SOD-123
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"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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KONY
Abstract: S2243
Text: STANDARD MARKING FORMAT * S2243 -55°C to +125°C 4 INPUT SUPPLY) VOLTAGE: Rated 3.3V ±10% 5) INPUT (SUPPLY) CURRENT: 25mA max FREQUENCY S2243 DATE CODE 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY) VOLTAGE, OPERATING TEMPERATURE RANGE AND LOADING):
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S2243
S2243
SAR456
QAP81)
KONY
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80ps
Abstract: Marking COde 99
Text: STANDARD MARKING FORMAT* 0°C to +85°C 3 STORAGE TEMPERATURE RANGE: S2236 X -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated 3.3VDC ±10% Operating +7V max 5) INPUT (SUPPLY) CURRENT: 35mA max DATE CODE 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY)
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S2236
S2236
120ps
SAR456
QAP81)
80ps
Marking COde 99
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Untitled
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT * S2245 PECL VCXO 2 OPERATING TEMPERATURE RANGE: 3) STORAGE TEMPERATURE RANGE: -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated +5VDC ±5% 5) INPUT (SUPPLY) CURRENT: 70 mA typ, 100 mA max 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY)
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S2245
S2245
SAR456
QAP81)
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KONY
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT * 3 STORAGE TEMPERATURE RANGE: DOT / SQUARE CORNER INDICATES PIN 1 S2246 CMOS CLOCK -20°C to +85°C -55°C to +125°C DATE CODE 4) INPUT SUPPLY) VOLTAGE: +5 VDC ±10% recommended operating, +7 VDC absolute max 5) INPUT (SUPPLY) CURRENT:
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S2246
S2246
MIL-STD-883,
SAR-456
QAP-81)
KONY
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QAP81
Abstract: CKT133
Text: STANDARD MARKING FORMAT * 4 6 S2220 155.5200 3 STORAGE TEMPERATURE RANGE: SARONIX DATE CODE 0°C to +70°C 155.5200 MHZ -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: +5VDC ±5% 5) INPUT (SUPPLY) CURRENT: 70mA typ, 100mA max DENOTES PIN 1 1 3 0.520 max 0.240
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S2220
100mA
CKT133
SAR456
QAP81)
QAP81
CKT133
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Untitled
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT* 3 4 S2239 44.7360 3 STORAGE TEMPERATURE RANGE: SARONIX DATE CODE 0°C to +70°C 44.7360 MHZ -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated 5VDC ±10%, Operating +4V min/+7V max 5) INPUT (SUPPLY) CURRENT: 20mA typ, 30mA max @ 25°C
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S2239
CKT136
S1228CGCB
S1228CGCB
SAR456
QAP81)
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s2242
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT* S2242 6.48000 MHz 3 STORAGE TEMPERATURE RANGE: DOT / SQUARE CORNER INDICATES PIN 1 -40°C to +85°C -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated +3.3V ±10% 5) INPUT (SUPPLY) CURRENT: 6 mA max 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY)
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S2242
S2242
SAR456
QAP81)
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qfn-12
Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
Text: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820
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MC13820/D
MC13820
QFN-12)
QFN-12
MC13820
qfn-12
cdm 12.1 laser
QFN12
IP3 BOOST
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Untitled
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT* 6 S2219 155.5200 3 STORAGE TEMPERATURE RANGE: SARONIX DATE CODE 0°C to +70°C 155.5200 MHZ -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: +5V 5) INPUT (SUPPLY) CURRENT: 70mA typ, 100mA max DENOTES PIN 1 1 3 0.520 max 0.240 max
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S2219
100mA
SAR456
QAP81)
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marking 99
Abstract: No abstract text available
Text: STANDARD MARKING FORMAT* S2238 Series 3 STORAGE TEMPERATURE RANGE: -40°C to +85°C S2238 X -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated 3.3VDC ±10% Operating +7V max 5) INPUT (SUPPLY) CURRENT: 35mA max DATE CODE 6) OUTPUT CHARACTERISTICS (ANY COMBINATION OF OPERATING (SUPPLY)
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S2238
S2238
150pnia
SAR456
QAP81)
marking 99
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MBC13720
Abstract: MBC13720T1 low noise amplifier 0947
Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking
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MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
MBC13720T1
low noise amplifier 0947
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S2247
Abstract: No abstract text available
Text: S2247 6.4800 MHZ 3 STORAGE TEMPERATURE RANGE: STANDARD MARKING FORMAT* -20 to +85°C -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated +5V ±10% 5) INPUT (SUPPLY) CURRENT: 15 mA typ, 20 mA max with 30 pF load SARONIX DATE CODE VCXO 6.4800 MHz S2247 DOT / SQUARE
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S2247
CKT-087A
SAR-456
QAP-81)
S2247
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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transistor marking c y um-1
Abstract: MU MARKING CODE siemens SD 222 M BSP 229 diode marking 226
Text: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type b -1.7 A BSP 171 VDS -60 V Type BSP 171 Ordering Code Q67000-S224 ^DS(on) Package Marking 0.35 n SOT-223
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OT-223
Q67000-S224
E6327
transistor marking c y um-1
MU MARKING CODE
siemens SD 222 M
BSP 229
diode marking 226
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type Vds BSP 171 -60 V Type BSP 171 Ordering Code Q67000-S224 -1.7 A f l DS(on) Package Marking 0.35 Q. SOT-223
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Q67000-S224
OT-223
E6327
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GaAs FET cfy 14
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration
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Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
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marking 82 sot343
Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Text: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR
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BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
marking 82 sot343
zo 103 ma
DIN45004B
MS80
Ghz dB transistor
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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TA4008F
Abstract: s22p
Text: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x =9mA (Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND E VCC = 2.7~3.3V MARKING
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TA4008F
1000pF
TA4008F
s22p
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OF IC 7909
Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Text: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE
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BFG25AW
BFG25AW/X;
BFG25AW/XR
OT343
OT343R
BFG25AW/X
BFG25AW/XR
BFG25AW
BFG25AW/X
OF IC 7909
xr 2230
UHF transistor GHz
marking 4S SOT343
4 pin dual-emitter
marking code C1E
marking c1e transistor
BFG25W
BFG25AWX
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BFG505W
Abstract: MLC040
Text: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures
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BFG505W
BFG505W/X;
BFG505W/XR
OT343
OT343R
BFG505W/X
BFG505W/XR
BFG505W
711DflZfc.
MLC040
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