toy motor Control IC
Abstract: S8082 toy motor 1.5 to 3 v
Text: 1CH Bi-Directional Motor Drive IC Semiconductor http:// www.auk.co.kr S8082 Description The S8082 is a monolithic integrated circuit designed for driving bi-directional DC motor with braking mode and speed control mode, and it is suitable for the loading motor driver of VCR,
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S8082
S8082
KSD-I7F014-003
toy motor Control IC
toy motor 1.5 to 3 v
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Untitled
Abstract: No abstract text available
Text: 1CH Bi-Directional Motor Drive IC Semiconductor http:// www.auk.co.kr S8082 Description The S8082 is a monolithic integrated circuit designed for driving bi-directional DC motor with braking mode and speed control mode, and it is suitable for the loading motor driver of VCR,
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S8082
S8082
KSD-I7F014-003
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toy motor Control IC
Abstract: No abstract text available
Text: 1CH Bi-Directional Motor Drive IC S8082 Description Semiconductor The S8082 is a monolithic integrated circuit designed for driving http:// www.auk.co.kr bi-directional DC motor with braking mode and speed control mode, and it is suitable for the loading motor driver of VCR, CDP, and TOY systems. The
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S8082
S8082
KSD-I7F014-000
toy motor Control IC
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Untitled
Abstract: No abstract text available
Text: DG2747/DG2748/DG2749 Vishay Siliconix 0.4-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2747, DG2748, and DG2749 are high performance, low on-resistance analog switches of dual SPST configuration. • Wide operation voltage range: 1.6 V to 4.3 V
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DG2747/DG2748/DG2749
DG2747,
DG2748,
DG2749
DG2747/2748/2749
08-Apr-05
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PDF
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DG2747
Abstract: vishay siliconix code marking DG2748 JESD78 marking 2748 DG2747DN
Text: DG2747/DG2748/DG2749 Vishay Siliconix 0.4-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2747, DG2748, and DG2749 are high performance, low on-resistance analog switches of dual SPST configuration. • Wide operation voltage range: 1.6 V to 4.3 V
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DG2747/DG2748/DG2749
DG2747,
DG2748,
DG2749
JESD78
DG2747/2748/2749
18-Jul-08
DG2747
vishay siliconix code marking
DG2748
JESD78
marking 2748
DG2747DN
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Si3483CDV
Abstract: Si3483CDV-T1-E3
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch
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Si3483CDV
Si3483CDV-T1-E3
08-Apr-05
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SI3483CDV
Abstract: Si3483CDV-T1-E3
Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 11.5 nC RoHS COMPLIANT • Load Switch
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Si3483CDV
Si3483CDV-T1-E3
18-Jul-08
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Si3457CDV
Abstract: Si3457CDV-T1-E3
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT
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Si3457CDV
Si3457CDV-T1-E3
08-Apr-05
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S-80894-Rev
Abstract: Si3457CDV Si3457CDV-T1-E3
Text: New Product Si3457CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.074 at VGS = - 10 V - 5.1 0.113 at VGS = - 4.5 V - 4.1 • TrenchFET Power MOSFET Qg (Typ.) APPLICATIONS 5.1 nC RoHS COMPLIANT
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Si3457CDV
Si3457CDV-T1-E3
18-Jul-08
S-80894-Rev
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transistor s808
Abstract: transistor c 5586 S-808 S-80808ANNP-E7Y-T2 S-80809ANNP-E7Z-T2 S-80810ANNP-E70-T2 S-80811ANNP-E71-T2 S-80812ANNP-E72-T2 marking s808 S-80814ANNP-EDB-T2
Text: Contents Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 2
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75kor
S-808
transistor s808
transistor c 5586
S-80808ANNP-E7Y-T2
S-80809ANNP-E7Z-T2
S-80810ANNP-E70-T2
S-80811ANNP-E71-T2
S-80812ANNP-E72-T2
marking s808
S-80814ANNP-EDB-T2
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SUP53P06-20
Abstract: No abstract text available
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
18-Jul-08
SUP53P06-20
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SUP53P06-20
Abstract: SUP53P06-20-E3 SUP53P06
Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT
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SUP53P06-20
O-220AB
SUP53P06-20-E3
08-Apr-05
SUP53P06-20
SUP53P06-20-E3
SUP53P06
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Si4459ADY
Abstract: No abstract text available
Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested
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Si4459ADY
Si4459ADY-T1-GE3
150ed
08-Apr-05
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Si4126DY
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS
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Si4124DY
Si4124DY-T1-E3
18-Jul-08
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si4459a
Abstract: Si4459ADY
Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested
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Si4459ADY
Si4459ADY-T1-GE3
150lectual
18-Jul-08
si4459a
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Si4126DY
Abstract: No abstract text available
Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4126DY
Si4126DY-T1-GE3
08-Apr-05
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x1Z11
Abstract: DG4051A
Text: New Product DG4051A/DG4052A/DG4053A Vishay Siliconix 8-Channel, Dual 4-Channel, Triple 2-Channel Multiplexers, with 0.5 pC Charge Injection DESCRIPTION FEATURES The DG4051A, DG4052A and DG4053A are precision low voltage, single and dual supply CMOS analog multiplexers.
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DG4051A/DG4052A/DG4053A
DG4051A,
DG4052A
DG4053A
DG4051A
08-Apr-05
x1Z11
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6860-1
Abstract: SI-4124 16a55
Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS
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Si4124DY
Si4124DY-T1-E3
08-Apr-05
6860-1
SI-4124
16a55
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Si7994DP
Abstract: si7994
Text: New Product Si7994DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0056 at VGS = 10 V 60 0.007 at VGS = 4.5 V 60 VDS (V) 30 • Halogen-free Qg (Typ.) • TrenchFET Power MOSFET APPLICATIONS • System Power DC/DC
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Si7994DP
Si7994DP-T1-GE3
08-Apr-05
si7994
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Si9926CDY
Abstract: SI9926CDY-T1-E3 8089-2 SI9926CD
Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.) 10 nC RoHS APPLICATIONS
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Si9926CDY
Si9926CDY-T1-E3
08-Apr-05
8089-2
SI9926CD
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DG4051A
Abstract: TSSOP16 spdt switch DG4053 mQFN-16 DG4051
Text: New Product DG4051A/DG4052A/DG4053A Vishay Siliconix 8-Channel, Dual 4-Channel, Triple 2-Channel Multiplexers, with 0.5 pC Charge Injection DESCRIPTION FEATURES The DG4051A, DG4052A and DG4053A are precision low voltage, single and dual supply CMOS analog multiplexers.
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DG4051A/DG4052A/DG4053A
DG4051A,
DG4052A
DG4053A
DG4051A
18-Jul-08
TSSOP16
spdt switch
DG4053
mQFN-16
DG4051
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8054ALR
Abstract: replacement transistor 13003 ED9 marking diode S-80830ALY 80836 S8052ANB-NE marking code DIODE ed6 cd 4847 S8054HNM S-8053ALR
Text: Contents Features . 1 Applications . 1 Pin Assignment . 1 Block Diagram . 2
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S-80827ANUP-EDQ
OT-89-3
S-8052HNM
S-80824ANY
S-8052HNM-CR
S-80824ANUP-EDM
S8052HNM
11S808001
8054ALR
replacement transistor 13003
ED9 marking diode
S-80830ALY
80836
S8052ANB-NE
marking code DIODE ed6
cd 4847
S8054HNM
S-8053ALR
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ic 4018
Abstract: S-80926ALMP-DAP-T2 K 3264 transistor
Text: C o n te n ts Applications. 1 Pin Block Diagram. 1
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OCR Scan
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S-808
S-809
ic 4018
S-80926ALMP-DAP-T2
K 3264 transistor
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