zkb* vac
Abstract: PLC GE FANUC VAC ZKB 420 Current Transformer ZKB siemens 230 gas discharge tube 90 88 pm WDU-2.5 fanuc 11 MF 101120000 vac zkb 8708660000
Text: RELAYS FIELDBUS CONNECTORS CIRCUIT BREAKERS OVERVOLTAGE PROTECTORS CABLE AND ELECTRONIC FUSES PRODUCTS DIN-RAIL MOUNTED TERMINAL BLOCKS TOOLS & MARKING SYSTEMS PROTECTED CONNECTORS PCB CONNECTORS & TERMINAL BLOCKS SIGNAL CONDITIONERS POWER SUPPLIES WIRING SOLUTIONS
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204-B
LIT0120
zkb* vac
PLC GE FANUC
VAC ZKB 420
Current Transformer ZKB
siemens 230 gas discharge tube 90 88 pm
WDU-2.5
fanuc 11 MF
101120000
vac zkb
8708660000
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ccfl inverter schematic
Abstract: ccfl inverter schematic frontier ccfl transformer 7N22 6 ccfl inverter inverter transformer marking n2 Transformer-SIH1005-01 transistor marking N1 ccfl inverter
Text: Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: 805 522-9998 FAX: (805) 522-9989 E-mail: frontiersales@frontierusa.com Web: frontierusa.com CCFL Inverter Transformer—SIH1005-01 A. Electrical specification: Part No. Marking
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Transformer--SIH1005-01
SIH1005-01
40KHz
200KHz
1600Vrms
50KHz
ccfl inverter schematic
ccfl inverter schematic frontier
ccfl transformer
7N22
6 ccfl inverter
inverter transformer
marking n2
Transformer-SIH1005-01
transistor marking N1
ccfl inverter
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IEC 60947-7-1 terminal block 400v
Abstract: MARKING ZTW red 5mm LED with holder G-FUSE 35 ZDU 4l1s ZDU16
Text: Terminals, Z-Series Overview Tension clamp connection Terminals with tension clamp technology, the Z series, are made to suit a wide range of customer applications. They are: Small structural dimensions, large marking surface, integrated test point, cross-connection ability within the Z series and to
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Untitled
Abstract: No abstract text available
Text: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the
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IRFL214,
SiHFL214
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFL014, SiHFL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the
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IRFL014,
SiHFL014
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the
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IRFL110,
SiHFL110
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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marking s15 diode
Abstract: No abstract text available
Text: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.54 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface mount Available in tape and reel
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IRLL110,
SiHLL110
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
marking s15 diode
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Untitled
Abstract: No abstract text available
Text: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.54 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface mount Available in tape and reel
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IRLL110,
SiHLL110
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFL9110
Abstract: No abstract text available
Text: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the
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IRFL9110,
SiHFL9110
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRFL9110
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Untitled
Abstract: No abstract text available
Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D
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IRFL9014,
SiHFL9014
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel
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IRLL014,
SiHLL014
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface mount Available in tape and reel
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IRFL210,
SiHFL210
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIHP22N60S-E3
Abstract: max6265 siliconix mosfet marking to-220
Text: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17
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SiHP22N60S
SiHF22N60S
O-220
O-220
SiHP22N60S-E3
SiHF22N60S-E3
18-Jul-08
max6265
siliconix mosfet marking to-220
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SiHP18N50C-E3
Abstract: SiHF18N50C SiHF18N50C-E3 SiHP18N50C
Text: Preliminary SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • High EAR capability 500 RDS(on) (Ω) VGS = 10 V • Low Figure-of-Merit Ron x Qg 0.225 Qg (Max.) (nC) 76 • 100 % Avalanche Tested Qgs (nC) 21 • High Peak Current Capability
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SiHP18N50C
SiHF18N50C
O-220
O-220
SiHP18N50C-E3
SiHF18N50C-E3
18-Jul-08
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IRL540
Abstract: SiHL540 SiHL540-E3 IRL540PBF
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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IRL540,
SiHL540
O-220
O-220
18-Jul-08
IRL540
SiHL540-E3
IRL540PBF
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IRFL014
Abstract: siliconix sot-223 marking SiHFL014 SiHFL014-E3
Text: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFL014,
SiHFL014
OT-223
18-Jul-08
IRFL014
siliconix sot-223 marking
SiHFL014-E3
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IRFP350LC
Abstract: No abstract text available
Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFP350LC,
SiHFP350LC
O-247
18-Jul-08
IRFP350LC
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IRLZ24
Abstract: SiHLZ24 SiHLZ24-E3
Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V
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IRLZ24,
SiHLZ24
2002/95/EC
O-220
O-220
18-Jul-08
IRLZ24
SiHLZ24-E3
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Untitled
Abstract: No abstract text available
Text: S O LITRON DEVICES INC 4ÔE D Ö3bßb02 []0D377ki TTT SOD T-5<S-IH3 "vü O LITR O N DEVICES PRODUCT SPECIFICATION R egulator TYPE NO. 1% -5 5 ° C t o +125°C Si General Purpose |« v. j - DEVICE MARKING CJSE038 G NPN IIPNP ro 1 O 1- cusT. +12 V o l t CLASS
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0D377ki
CJSE038
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9139310000
Abstract: ZBE 1016 9139130000
Text: ACCESSORIES 182 W eidm iiller ! • SIHA fuse holder The SIHA fuse holder turns your disconnect terminal into a fuse terminal within seconds. Just remove the disconnect lever, and plug-in the fuse connector - ready! Terminal markers As one of the leading manufacturers
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TPC8208 TO SH IB A FIE LD E F F E C T T R A N SIS TO R SILICO N N CHANNEL MOS T Y P E U-M O SIH TENTATIVE] TPC8208 Lithium Ion Battery Applications High Speed and High Efficiency DC-D C Converters Note Book PC .Portable Equipments Applications
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TPC8208
10//A
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vitrohm rgc
Abstract: 509-0 Vitrohm 45802 508-0 Vitrohm 3900J01SA berg din
Text: S 1. G5. 38 Serie RGC Series RGC SMD-Metallglasurschicht Widerstand SMD-Metalglaze Film Resistors Chip-Widerstand Chip Resistors V IT R O H M V1TRO H M D EU TSCH LA N D O m bH SIHMENSSTR. 7-« 2 5 4 2 1 PtNNEBERG W . + 49 0 m m / 7 0 M F m . +4 9 10M 101 / 7 2 7 B7
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3900J07
0HUU/70M
vitrohm rgc
509-0 Vitrohm
45802
508-0 Vitrohm
3900J01SA
berg din
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SMD CODE PACKAGE SOT23 489
Abstract: 1PS89SS04 1PS89SS05 1PS89SS06 SG 21 DIODE SMD DIODE marking S6 89 PS89SS05 Diode smd s6 95 em 34 philips marking za sc-89
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET 1PS89SS04; 1PS89SS05; 1PS89SS06 High speed double diodes Preliminary specification Philips Sem iconductors 1999 Mar 01 PHILIPS Philips Semiconductors Preliminary specification 1PS89SS04; 1PS89SS05; High speed double diodes
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1PS89SS04;
1PS89SS05;
1PS89SS06
1PS89SS.
1PS89SS06
PS89SS04
5104/00/02/pp9
SMD CODE PACKAGE SOT23 489
1PS89SS04
1PS89SS05
SG 21 DIODE SMD
DIODE marking S6 89
PS89SS05
Diode smd s6 95
em 34 philips
marking za sc-89
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melcher dc imr
Abstract: No abstract text available
Text: Benign Environment //VIR 25-FomHy D C-D C Converters <40 W IMR 25-Family 25 W DC-DC Converters Input to output electric strength test 1500 V DC Single, dual or triple output :+xilr1j3ÿtïiltërib^ :*x:SihQitr<5iÎ<5Ü1^ x»:x^ 3^ Æ s im W M M W M m W M m
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25-FomHy
25-Family
97/IN
melcher dc imr
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