MYS 99
Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Text: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a
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AN926
MYS 99
STMicroelectronics date code format
STMicroelectronics marking code date
MYS 99 STMicroelectronics
Date Code Marking STMicroelectronics
STMicroelectronics marking code
AN926
STMicroelectronics marking code date diode
soic date code stmicroelectronics
INTEGRATED CIRCUIT DATE code stmicroelectronics
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MYS 99
Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Text: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes
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AN926
MYS 99
STMicroelectronics marking code date
MYS 99 STMicroelectronics
Date Code Marking STMicroelectronics
STMicroelectronics date code format
st marking code
st MYS 99
stmicroelectronics assembly site date code format
LOT code stmicroelectronics
marking code stmicroelectronics
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sd4931
Abstract: No abstract text available
Text: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European
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SD4931
2002/95/EC
SD4931
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Untitled
Abstract: No abstract text available
Text: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■
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STAC2943
STAC177B
STAC2943
SD2933,
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Untitled
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
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SD2933W
Abstract: No abstract text available
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
SD2933W
SD2933W
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resistor 560 ohm
Abstract: SD2933
Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed
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SD2933
SD2933
resistor 560 ohm
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B2DN TSE2
Abstract: B2DN STTS2002 Analog Marking Information stmicroelectronics "serial eeprom" M34E02 MO-229 STTS424E02 TSE2002a2 tse2
Text: STTS2002 2.3 V memory module temperature sensor with a 2 Kb SPD EEPROM Data brief Features • STTS2002 is a 2.3 V memory module temperature sensor with 2 Kb SPD EEPROM forward compatible with JEDEC standard TSE 2002a2 and backward compatible with STTS424E02
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STTS2002
STTS2002
2002a2
STTS424E02
M34E02
B2DN TSE2
B2DN
Analog Marking Information
stmicroelectronics "serial eeprom"
MO-229
STTS424E02
TSE2002a2
tse2
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transistor marking G9
Abstract: J4-81 j4 81 MARKING D8
Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
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STAC3933
STAC3933
STAC177B
transistor marking G9
J4-81
j4 81
MARKING D8
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Untitled
Abstract: No abstract text available
Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability
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SD2943
SD2943
SD2933,
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sd2943
Abstract: No abstract text available
Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability
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SD2943
SD2943
SD2933,
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sd2931-10w
Abstract: marking code oz 09-Sep-2004
Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures
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SD2931-10
SD2931-10
SD2931
sd2931-10w
marking code oz
09-Sep-2004
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Arco 423
Abstract: choke vk200 sd2931-10w
Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower
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SD2931-10
SD2931-10
SD2931
Arco 423
choke vk200
sd2931-10w
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Untitled
Abstract: No abstract text available
Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
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SD3933
2002/95/EEC
SD3933
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ECG transistor replacement guide book free
Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a
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UG-309
UG-201
UG-349
UG-1034
UG-146
UG-83
UG-318
UG-273
UG-255
ECG transistor replacement guide book free
ecg semiconductors master replacement guide
philips ecg master replacement guide
Diode Equivalent 1N34A
philips ecg semiconductors master replacement guide
RCA SK CROSS-REFERENCE
ecg philips semiconductor master book
ECG NTE semiconductor manual
transistor to220 ph on 588 5v
rca 40673
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Untitled
Abstract: No abstract text available
Text: M25P80 8 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 8 Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (8 Mbit) in 6s (typical)
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M25P80
50MHz
2014h)
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Untitled
Abstract: No abstract text available
Text: M25P80 8 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 8 Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (8 Mbit) in 8s (typical)
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M25P80
50MHz
2014h)
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SO8W Package
Abstract: No abstract text available
Text: M25P80 8 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz Clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Flash memory ■ Page Program (up to 256 Bytes) in 0.64 ms
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M25P80
2014h)
SO8W Package
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Untitled
Abstract: No abstract text available
Text: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute
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VL6180X
VL6180X
DocID026171
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Untitled
Abstract: No abstract text available
Text: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute
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VL6180X
VL6180X
DocID026171
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Untitled
Abstract: No abstract text available
Text: M25P80 8 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz Clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Flash memory ■ Page Program (up to 256 bytes) in 0.64 ms
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M25P80
2014h)
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Untitled
Abstract: No abstract text available
Text: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute
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VL6180X
VL6180X
DocID026171
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vl6180xv
Abstract: No abstract text available
Text: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data • Two programmable GPIO – Window and thresholding functions for both ranging and ALS Description Features • Three-in-one smart optical module – Proximity sensor – Ambient Light Sensor
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VL6180X
100mm
DocID026171
vl6180xv
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Marking STMicroelectronics Single digit week
Abstract: VDFPN8 package M45PE80 SO16 wide package
Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory
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M45PE80
4014h)
Marking STMicroelectronics Single digit week
VDFPN8 package
M45PE80
SO16 wide package
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