Untitled
Abstract: No abstract text available
Text: DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V Low Input Capacitance Fast Switching Speed
|
Original
|
DMC2004DWK
OT-363
OT-363
J-STD-020C
MIL-STD-202,
DS31114
621-DMC2004DWK-7
DMC2004DWK-7
|
PDF
|
Diode smd 86
Abstract: DIODE smd marking 27 diode marking 76 KB156 smd diode marking 27 smd diode 1301 BB156
Text: Diodes SMD Type Low-Voltage Variable Capacitance Diode KB156 BB156 SOD-323 Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Excellent linearity Very small plastic SMD package +0.1 2.6-0.1 Very low series resistance. 0.375 +0.05 0.1-0.02
|
Original
|
KB156
BB156)
OD-323
Diode smd 86
DIODE smd marking 27
diode marking 76
smd diode marking 27
smd diode 1301
BB156
|
PDF
|
1SS379
Abstract: 0-110A
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)
|
Original
|
1SS379
OT-23
100mA
1SS379
0-110A
|
PDF
|
smd diode marking a6
Abstract: smd diode a6 DIODE SMD A6 SMD a6 Transistor SMD DIODE A6 t smd transistor A6 SMD A6 smd transistor A6 datasheet DIODE smd marking A6 BAS216
Text: Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V cathode idenfifier Repetitive peak forward current:max. 500 mA.
|
Original
|
BAS216
OD110
smd diode marking a6
smd diode a6
DIODE SMD A6
SMD a6 Transistor
SMD DIODE A6 t
smd transistor A6
SMD A6
smd transistor A6 datasheet
DIODE smd marking A6
BAS216
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1403011
|
PDF
|
dmn5l06dwk
Abstract: No abstract text available
Text: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
|
DMN5L06DWK
AEC-Q101
OT363
J-STD-020
MIL-STD-202,
DS30930
621-DMN5L06DWK-7
DMN5L06DWK-7
dmn5l06dwk
|
PDF
|
marking TV
Abstract: 1SV304
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV304 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=3.0 Typ. Low Series Resistance:rs=0.27 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02
|
Original
|
1SV304
OD-323
marking TV
1SV304
|
PDF
|
Low Forward Voltage Diode
Abstract: Diode smd 86 DIODE SMD 88 smd symbols 1PS70SB82 88 diode Marking 85 diode marking 88 smd diode marking smd marking rd
Text: Diodes SMD Type Schottky barrier double diodes 1PS70SB82;1PS70SB84 1PS70SB85;1PS70SB86 Features Low forward voltage Very small SMD plastic package Low diode capacitance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit Continuous reverse voltage
|
Original
|
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS70SB84
Low Forward Voltage Diode
Diode smd 86
DIODE SMD 88
smd symbols
88 diode
Marking 85
diode marking 88
smd diode marking
smd marking rd
|
PDF
|
1SV264
Abstract: No abstract text available
Text: Diodes SMD Type PIN Diode for VHF,UHF,AGC Applications 1SV264 Features Series connection of 2 elements in an ultrasmall package facilitates high-density mounting and permits 1SV264-applied equipment to be made smaller Small interterminal capacitance C=0.23pF typ .
|
Original
|
1SV264
1SV264-applied
1SV264
|
PDF
|
KDV262
Abstract: No abstract text available
Text: Diodes SMD Type Silicon Epitaxial Planar Diode KDV262 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio : C2V/C25V=12.5 Typ. Low Series Resistance : rs=0.6 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error.
|
Original
|
KDV262
OD-323
C2V/C25V
KDV262
|
PDF
|
Marking C9
Abstract: HSM276ASR HSM276SR
Text: Diodes SMD Type Silicon Schottky Barrier Diode HSM276SR SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1
|
Original
|
HSM276SR
OT-23
HSM276ASR
200pF,
Marking C9
HSM276SR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
|
Original
|
PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
|
PDF
|
smd diode a6
Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
|
Original
|
1SS304
smd diode a6
smd diode marking a6
DIODE A6
marking A6
A CLIPPER CIRCUIT APPLICATIONS
1SS304
smd transistor A6
A6 DIODE
SMD a6 Transistor
|
PDF
|
vs-10bq100
Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
|
Original
|
VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vs-10bq100
DIODE V1J marking code
V1j marking code
V1J diode
95034
vs10bq100
|
PDF
|
|
|
smd diode ua
Abstract: transistor smd marking 2SC3648
Text: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage
|
Original
|
2SC3648
250mA
smd diode ua
transistor smd marking
2SC3648
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high
|
Original
|
VS-MBR150,
VS-MBR150-M3,
VS-MBR160,
VS-MBR160-M3
2002/95/EC
DO-204AL
DO-41)
2011/65/EU
2002/95/EC.
|
PDF
|
TO-252AA Mechanical dimensions
Abstract: VS-50WQ04
Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition
|
Original
|
VS-50WQ04FN-M3
2002/95/EC
O-252AA)
J-STD-020,
VS-50WQ04FN-M3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
TO-252AA Mechanical dimensions
VS-50WQ04
|
PDF
|
smd marking S21
Abstract: DIODE S4 56 smd diode S4 DIODE marking S4 06 BAP65-05
Text: Diodes SMD Type Silicon PIN diode BAP65-05 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage, current controlled 1 0.55 Two elements in common cathode configuration +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 RF resistor for RF switches
|
Original
|
BAP65-05
OT-23
smd marking S21
DIODE S4 56
smd diode S4
DIODE marking S4 06
BAP65-05
|
PDF
|
HSL2-1808
Abstract: BAY6642
Text: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified
|
Original
|
BAY6642
1N6639
1N6643
HSL2-1808
HSL2-1808
BAY6642
|
PDF
|
VS-40EPS12-M3
Abstract: VS-40EPS08-M3 VS-40EPS12
Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47
|
Original
|
VS-40EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-40EPS12-M3
VS-40EPS08-M3
VS-40EPS12
|
PDF
|
sOd-923
Abstract: No abstract text available
Text: 05297 PRSB6.8D Only One Name Means ProTek’Tion low capacitance TVS COMPONENT Description The PRSB6.8D is a transient voltage suppressor array designed to protect applications such as wireless telecommunication devices and portable electronics. This device is available in a bidirectional configuration with a working voltage
|
Original
|
OD-923
sOd-923
|
PDF
|
60EPS08PBF
Abstract: VS-60EPS12PBF
Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47
|
Original
|
VS-60EPS.
JEDEC-JESD47
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
60EPS08PBF
VS-60EPS12PBF
|
PDF
|
marking 5c diode
Abstract: 40 ria 120 PANASONIC MARKING AC
Text: Panasonic V a ria b le C a p a c ita n c e D io d e s MA2S374 Silicon epitaxial planer type U n it : m m For CATV tuner • Features • Small series resistance ro • SS-Mini package, enabling down-sizing of the equipment and auto matic insertion through taping
|
OCR Scan
|
MA2S374
10ki2
470MHz
470MHz
marking 5c diode
40 ria 120
PANASONIC MARKING AC
|
PDF
|
marking t6 VARIABLE CAPACITANCE DIODE
Abstract: 1SV211
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
1SV211
C2V/C25V
marking t6 VARIABLE CAPACITANCE DIODE
1SV211
|
PDF
|
