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    MARKING SYMBOL ER TRANSISTOR Search Results

    MARKING SYMBOL ER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING SYMBOL ER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product


    Original     		LUMF23NDW1T1G S-LUMF23NDW1T1G AEC-Q101 SC-88 LUMF23NDW1T3G S-LUMF23NDW1T3G PDF

    LUMF23NDW1T3G

    Abstract: transistors marking HJ mh 7489 789 marking
    Text: LESHAN RADIO COMPANY, LTD. Power Management dual transistors zApplication Power management circuit LUMF23NDW1T1G 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product


    Original     		LUMF23NDW1T1G SC-88 3000/Tape LUMF23NDW1T3G 10000/Tape LUMF23NDW1T3G transistors marking HJ mh 7489 789 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: DN500 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP500


    Original     		DN500 DP500 KST-9086-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD129 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Switching Application


    Original     		STD129 KST-9060-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code


    Original     		DP500 DN500 KST-9091-003 -500m -150m PDF

    Untitled

    Abstract: No abstract text available
    Text: STC2073D NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) TO-252


    Original     		STC2073D O-252 STC2073 KSD-T6O038-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD1408PI NPN Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= 80V Min. Com plem ent t o STB1017PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STD1408PI STB1017PI O-220F-3L STD1408 SDB20D45 KSD-T0O111-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STC403 NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing Pa ck a ge Code


    Original     		STC403 O-220F-3L SDB20D45 KSD-T0O017-003 PDF

    Stc405

    Abstract: No abstract text available
    Text: STC405 NPN Silicon Transistor Features PIN Connection • Low sat urat ion swit ching applicat ion • Volt age regulat or applicat ion • High Volt age : VCEO= 60V Min. 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code STC405 STC405


    Original     		STC405 O-220F-3L SDB20D45 KSD-T0O064-001 Stc405 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STB1017PI STD1408PI O-220F-3L STB1017 SDB20D45 KSD-T0O110-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STC603PI NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing


    Original     		STC603PI O-220F-3L STC603 SDB20D45 KSD-T0O114-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed swit ching  VCEO sus = 400V  Suit able for Swit ching Regulat or and Mot or Cont rol PIN Connection C B Ordering Information Type N O. M a r k ing Pa ck a ge Code


    Original     		STD13005IS STD13005I STD13005 KSD-T6Q012-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: STA3360PI PNP Silicon Transistor Applications PIN Connection • Power am plifier applicat ion • High current swit ching applicat ion Features • Low sat urat ion volt age : VCE sat = - 0.15V Typ. @ I C= - 1A, I B= - 50m A • Large collect or current capacit y: I C= - 3A


    Original     		STA3360PI O-220F-3L STA3360 SDB20D45 KSD-T0O109-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUT390J Epitaxial planar NPN silicon transistor Description • Com plex t ype bipolar t ransist or Feature • Sm all package save PCB area • Reduce quant it y of part s and m ount ing cost • Two SBT3904 chips in SOT- 363 package Package : SOT-363 Ordering Information


    Original     		SUT390J SBT3904 OT-363 KSD-T5S009-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1980E PNP Silicon Transistor PIN Connection Description • General sm all signal am plifier Features 3 • Low collect or sat urat ion volt age : VCE sat = - 0.3V( Max.) • Low out put capacit ance : Cob = 4pF( Typ.) • Com plem ent ary pair wit h 2SC5343E


    Original     		2SA1980E 2SC5343E OT-523 KSD-T5E007-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose applicat ion • Swit ching applicat ion C Features B B C E • Low Leakage current • Low collect or sat urat ion volt age enabling low volt age operat ion • Com plem ent ary pair wit h 2N4403


    Original     		2N4401 2N4403 KSD-T0A078-000 PDF

    144T

    Abstract: No abstract text available
    Text: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eatures 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta=25°C) Param eter •C irc u it schematic Symbol


    OCR Scan     		DTA144T DTC144T 200mW Ta--25 94S-904-AC 144T PDF

    PUMT1

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES PUMT1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.


    OCR Scan     		SC-88; OT363 PUMT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.


    OCR Scan     		BF820; BF822 BF821; BF823. BF820 BF822 PDF

    TRANSISTOR 124E

    Abstract: 124e transistor marking 1n TRANSISTOR TN3000 marking H5 B5 MARKING 124E
    Text: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A UMG1N / UMH1N / UMH5N I FMG1A / IMH1A / IMH5A Transistors I Digital Transistor Duai Digital Transistors for inverter Driver UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A • Features •A b s o lu te maximum ratings (Ta=25',C )


    OCR Scan     		DTA124E 120mW 200mype 94S-789-C TRANSISTOR 124E 124e transistor marking 1n TRANSISTOR TN3000 marking H5 B5 MARKING 124E PDF

    marking T2D

    Abstract: STA93
    Text: Philips Semiconductors Product specification PNP high-voltage transistors PMSTA92; PMSTA93 FEATURES PINNING • High voltage. PIN DESCRIPTION 1 base APPLICATIONS 2 em itter • High voltage sw itching in telephony. 3 collector DESCRIPTION a PNP transistor in a SO T323 plastic package.


    OCR Scan     		PMSTA92; PMSTA93 STA42 PMSTA43. PMSTA92 OT323) STA92 STA93 marking T2D PDF

    d2p marking code philips

    Abstract: marking d3p D3P SOT23 D2p marking 4-20 mA 1997 marking D2p
    Text: Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 FEATURES PINNING • Low current 100 mA PIN • Low voltage (32 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • G eneral purpose sw itching and amplification.


    OCR Scan     		BCW31 BCW32; BCW33 BCW31 MAM255 d2p marking code philips marking d3p D3P SOT23 D2p marking 4-20 mA 1997 marking D2p PDF

    a5 TRANSISTOR

    Abstract: transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor
    Text: UM A5 N / FM A5A Transistors U M G 11N / F M G 11A I Digital Transistor Dual Digital Transistors for Inverter Driver UMA5N / FMA5A I Absolute maximum ratings (Ta=25'C) •Features 1 ) Tw o D T A 123J transistors are housed in a U M T o r S M T package. Parameter


    OCR Scan     		TaaB25 100MHz 94S-813-C123J) UMG11N a5 TRANSISTOR transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor PDF

    C3906K

    Abstract: C4102
    Text: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.


    OCR Scan     		2SA1579 2SA1514K 2SC4102 2SC3906K --120V, --50mA) 2SA1514K C4102/2S C3906K C4102 PDF