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    MARKING TP5C Search Results

    MARKING TP5C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING TP5C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADV9502

    Abstract: ep320Ipc TNPLD610 N85C220 D5AC312 EP320IDC npld610 EP320IPI EPX780LC84 N5C180
    Text: April 4, 1995 Dear Customer: Effective July 1, 1995, Altera will transition from a dual mark, to a single mark for all products acquired from Intel. In addition, Altera will be converting solely to Altera ordering codes for these products See Table 1 . This change is cosmetic in nature and does not effect


    Original     		PDF EP320IPI EP22V10LC EP22V10PC EP22V10ELC EP22V10EPC EP312DC EP312LC EP312PC EP600IDC EP600ILC ADV9502 ep320Ipc TNPLD610 N85C220 D5AC312 EP320IDC npld610 EP320IPI EPX780LC84 N5C180

    marking TP5C

    Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †


    Original     		PDF TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA marking TP5C TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707

    A10150

    Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2522 125pF O-243AA OT-89) O-243, A101507 A10150 TO243AA TP2522 TP2522N8-G TP2522ND A101507

    TO-243AA

    Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2520 125pF O-243AA OT-89) O-243, A101507 TO-243AA TN2520N8-G TP2520 tp5cw jedec package TO-243AA

    Untitled

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707

    TP2520N8-G

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G

    TP2520

    Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †


    Original     		PDF TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2522 125pF DSFP-TP2522 B091408

    TP2522ND

    Abstract: TP2522 TP2522N8-G
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original     		PDF TP2522 125pF DSFP-TP2522 C081413

    b0914

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2520 125pF B091408 b0914

    Untitled

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		PDF TP2520 125pF B022309

    TP2520

    Abstract: tp5cw TP5C
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2520 125pF B022309 TP2520 tp5cw TP5C

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original     		PDF TP2520 125pF C081413