tda7052 equivalent
Abstract: TDA7052 TDA7052 application note TDA7052 audio power amplifier TDA7052 Audio power amplifier IC tda7052 ic TDA7052N tda7052n2 TV210D NXP dip8 date code marking
Text: INTEGRATED CIRCUITS DATA SHEET TDA7052 1 W BTL mono audio amplifier Product specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Product specification 1 W BTL mono audio amplifier TDA7052 GENERAL DESCRIPTION The TDA7052 is a mono output amplifier in a 8-lead dual-in-line DIL plastic package. The device is designed for
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TDA7052
TDA7052
tda7052 equivalent
TDA7052 application note
TDA7052 audio power amplifier
TDA7052 Audio power amplifier IC
tda7052 ic
TDA7052N
tda7052n2
TV210D
NXP dip8 date code marking
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V5834L
Abstract: No abstract text available
Text: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring
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NTMFS5834NL,
NVMFS5834NL
NVMFS5834NLWF
NTMFS5834NL/D
V5834L
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V5834L
Abstract: 5834L
Text: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring
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NTMFS5834NL,
NVMFS5834NL
NVMFS5834NLWF
AEC-Q101
10cable
NTMFS5834NL/D
V5834L
5834L
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NVMFS5826NLT1G
Abstract: No abstract text available
Text: NVMFS5826NL Power MOSFET 60 V, 24 mW, 26 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5826NLWF − Wettable Flanks Product
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NVMFS5826NL
NVMFS5826NLWF
AEC-Q101
NVMFS5826NL/D
NVMFS5826NLT1G
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Untitled
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product
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NVMFS5830NL
NVMFS5830NLWF
AEC-Q101
NVMFS5830NL/D
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Untitled
Abstract: No abstract text available
Text: NVMFS5885NL Power MOSFET 60 V, 15 mW, 39 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5885NLWF − Wettable Flanks Product
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NVMFS5885NL
NVMFS5885NLWF
AEC-Q101
NVMFS5885NL/D
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Untitled
Abstract: No abstract text available
Text: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring
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NTMFS5834NL,
NVMFS5834NL
NVMFS5834NLWF
NTMFS5834NL/D
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Untitled
Abstract: No abstract text available
Text: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product
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NVMFS5830NL
NVMFS5830NLWF
NVMFS5830NL/D
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74LVC1G58
Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW JESD22-A114E marking code 5
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 04 — 27 April 2009 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
74LVC1G58GF
74LVC1G58GM
74LVC1G58GV
74LVC1G58GW
JESD22-A114E
marking code 5
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74LVC1G58-Q100
Abstract: No abstract text available
Text: 74LVC1G58-Q100 Low-power configurable multiple function gate Rev. 1 — 10 June 2014 Product data sheet 1. General description The 74LVC1G58-Q100 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND,
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74LVC1G58-Q100
74LVC1G58-Q100
74LVC1G58
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V5832L
Abstract: No abstract text available
Text: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5832NLWF − Wettable Flanks Product
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NVMFS5832NL
NVMFS5832NLWF
AEC-Q101
NVMFS5832NL/D
V5832L
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Untitled
Abstract: No abstract text available
Text: NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5844NLWF − Wettable Flanks Product
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NTMFS5844NL,
NVMFS5844NL
NVMFS5844NLWF
AEC-Q101
NTMFS5844NL/D
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74LVC1G58
Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 05 — 15 October 2010 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
74LVC1G58GF
74LVC1G58GM
74LVC1G58GV
74LVC1G58GW
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Untitled
Abstract: No abstract text available
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 8 — 22 April 2014 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
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Untitled
Abstract: No abstract text available
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 7 — 6 December 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
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Untitled
Abstract: No abstract text available
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 7 — 6 December 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
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74LVC1G58
Abstract: 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 01 — 15 September 2004 Product data sheet 1. General description The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
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74LVC1G58
74LVC1G58
74LVC1G58GM
74LVC1G58GV
74LVC1G58GW
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74LVC1G58GV
Abstract: 74LVC1G58GW JESD22-A114E 74LVC1G58 74LVC1G58GF 74LVC1G58GM
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 03 — 27 August 2007 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,
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74LVC1G58
74LVC1G58
74LVC1G58GV
74LVC1G58GW
JESD22-A114E
74LVC1G58GF
74LVC1G58GM
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marking code YK
Abstract: No abstract text available
Text: 74LVC1G58 Low-power configurable multiple function gate Rev. 02 — 22 February 2007 Product data sheet 1. General description The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
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74LVC1G58
74LVC1G58
marking code YK
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Untitled
Abstract: No abstract text available
Text: 1GB, 2GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 128M, 256M X 64 UDIMM Features: • ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-10600, PC3-8500 Utilizes DDR3-1066 and DDR3-1333 SDRAM FBGA
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240-Pin
PC3-10600,
PC3-8500
DDR3-1066
DDR3-1333
128MX64)
256MBX64)
8125us
-128Mx8
128MX8
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V170R
Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
Text: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non
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R6921ZOV511RA110
4K221
S20K140
ERZC20OK361
ERZC20DK391
S20K230
S20K250
ERZC20DK471
S20K300
V480LA
V170R
SO7K40
so7k
SO7K250
sanken snr
ERZC07DK330
varistor 420 s 14k
sanken varistor SNR
varistor 7k 270
ZOV Varistor
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MARKING V58
Abstract: No abstract text available
Text: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD
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NE72218
NE72218
24-Hour
MARKING V58
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T225-6
Abstract: marking code 581
Text: LOW PROFILE SERIES SPECIFICATIONS 550» 5 8 0 ,6 2 0 and 6 8 0 VAC Varistors Recognitions To Safety Agency Standards Maida Style Number R691 *ZOV551 RA255 R65* *ZOV551 RA510 R66*ZOV551RA540 S66* *ZOV551RA690 A X X X X B X X X X R69* •ZOV581RA265 R651 *ZOV581 RA530
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Characteris01
1-02MM
T225-6
marking code 581
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VARISTOR z151
Abstract: varistor z301 zo 150 77 z251 zo 107
Text: 53m m Single —Disk Configuration Maida Style Number D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 A B c D E F ZOV131RA49C X X X ZOV141RA530 X X X ZO V151RA570 X X X ZO V181RA630 X X X ZO V231RA730 X X X ZO V251RA800 X X X
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10x1000
VARISTOR z151
varistor z301
zo 150 77
z251
zo 107
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