Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING W1S Search Results

    MARKING W1S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING W1S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original
    PDF BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23

    VPS05604

    Abstract: No abstract text available
    Text: BAS 16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original
    PDF OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604

    BAS16S

    Abstract: VPS05604 4C3 diode
    Text: BAS16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original
    PDF BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Text: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


    Original
    PDF VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23

    BFT92

    Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original
    PDF BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23

    infineon marking W1s SOT23

    Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original
    PDF BFT92 VPS05161 15rements infineon marking W1s SOT23 BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327

    SMBTA06UPN

    Abstract: SC74
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original
    PDF SMBTA06UPN VPW09197 EHA07177 EHP00821 EHP00815 Aug-21-2002 EHP00817 SMBTA06UPN SC74

    Transistor BFT 98

    Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
    Text: BFT 92W PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s


    Original
    PDF VSO05561 OT-323 900MHz Oct-25-1999 Transistor BFT 98 Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w

    infineon marking W1s SOT23

    Abstract: marking W1S sot23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original
    PDF BFT92 VPS05161 infineon marking W1s SOT23 marking W1S sot23

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original
    PDF SMBTA06UPN VPW09197 EHA07177

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original
    PDF SMBTA06UPN VPW09197 EHA07177

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 68-08S Q62702-A1344 OT-363 EHD07102 EHD07103

    VPS05604

    Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999 VPS05604 CC140 marking 68 Marking w1s sot 1c36 sot-36

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4  For mixer applications in the VHF / UHF range 5 6  For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999

    Untitled

    Abstract: No abstract text available
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jan-28-2002

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


    Original
    PDF 62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode

    Marking w1s sot

    Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
    Text: BAS 70-08S Silicon Schottky Diode Array  General-purpose diode for high-speed switching 4  Circuit protection 5 6  Voltage clamping  High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF 70-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHB00042 EHB00043 EHB00044 Marking w1s sot VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363

    BAT68-08S

    Abstract: VPS05604 diode array MARKING A3
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    PDF BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jul-30-2001 BAT68-08S VPS05604 diode array MARKING A3

    VPS05604

    Abstract: No abstract text available
    Text: %$7 6 6LOLFRQ 6FKRWWN\ 'LRGH $UUD\ 3UHOLPLQDU\ GDWD 4 • Low barrier diode for detectors up to GHz 5 6 frequencies 7DSH ORDGLQJ RULHQWDWLRQ Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1


    Original
    PDF OT-363 VPS05604 EHA07193 EHA07291 62-08S OT-363 EHD07061 900MHz EHD07063 EHD07062 VPS05604

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original
    PDF OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original
    PDF OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan
    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    TRANSISTOR MARKING YB

    Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
    Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj


    OCR Scan
    PDF 3904PN Q62702-C OT-363 3904PN TRANSISTOR MARKING YB sot36 3904P marking code Yb Transistor 70 sot3-6

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan
    PDF BFT92W Q62702-F1681 OT-323 900MHz