Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING W1S SOT Search Results

    MARKING W1S SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING W1S SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VPS05604

    Abstract: No abstract text available
    Text: BAS 16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original
    OT-363 VPS05604 EHA07193 EHA07291 OT-363 Aug-09-1999 EHB00025 EHB00022 VPS05604 PDF

    BAS16S

    Abstract: VPS05604 4C3 diode
    Text: BAS16S Silicon Switching Diode Array 4  For high-speed switching applications 5 6  Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2


    Original
    BAS16S OT-363 VPS05604 EHA07193 EHA07291 OT363 Jul-06-2001 EHB00025 BAS16S VPS05604 4C3 diode PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original
    BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23 PDF

    VPS05604

    Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999 VPS05604 CC140 marking 68 Marking w1s sot 1c36 sot-36 PDF

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Text: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


    Original
    VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 PDF

    BFT92

    Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original
    BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23 PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original
    BFT92 VPS05161 infineon marking W1s SOT23 marking W1S sot23 PDF

    VPS05604

    Abstract: No abstract text available
    Text: %$7 6 6LOLFRQ 6FKRWWN\ 'LRGH $UUD\ 3UHOLPLQDU\ GDWD 4 • Low barrier diode for detectors up to GHz 5 6 frequencies 7DSH ORDGLQJ RULHQWDWLRQ Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1


    Original
    OT-363 VPS05604 EHA07193 EHA07291 62-08S OT-363 EHD07061 900MHz EHD07063 EHD07062 VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    68-08S OT-363 VPS05604 EHA07193 EHA07291 68-08S Q62702-A1344 OT-363 EHD07102 EHD07103 PDF

    BAT62-08S

    Abstract: VPS05604
    Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4  Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604


    Original
    BAT62-08S OT-363 VPS05604 EHA07193 EHA07291 OT363 EHD07061 900MHz EHD07063 BAT62-08S VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jan-28-2002 PDF

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


    Original
    62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode PDF

    BAT68-08S

    Abstract: VPS05604 diode array MARKING A3
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jul-30-2001 BAT68-08S VPS05604 diode array MARKING A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4  For mixer applications in the VHF / UHF range 5 6  For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999 PDF

    Transistor BFT 98

    Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
    Text: BFT 92W PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s


    Original
    VSO05561 OT-323 900MHz Oct-25-1999 Transistor BFT 98 Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w PDF

    Marking w1s sot

    Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
    Text: BAS 70-08S Silicon Schottky Diode Array  General-purpose diode for high-speed switching 4  Circuit protection 5 6  Voltage clamping  High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original
    70-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHB00042 EHB00043 EHB00044 Marking w1s sot VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363 PDF

    h12e

    Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
    Text: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


    Original
    SMBT3904PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00763 EHP00764 Aug-21-2002 h12e ic power 22E SMBT3904PN VPS05604 h11e h22e PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


    Original
    SMBT3904PN EHA07193 VPS05604 OT-363 EHA07177 OT363 PDF

    H21E

    Abstract: No abstract text available
    Text: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


    Original
    SMBT3904PN EHA07193 VPS05604 OT-363 EHA07177 OT363 H21E PDF

    infineon marking W1s

    Abstract: marking code w1s marking W1S Marking w1s sot
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original
    BCR10PN EHA07176 OT-363 EHA07193 OT363 infineon marking W1s marking code w1s marking W1S Marking w1s sot PDF

    W1s transistor

    Abstract: marking W1S BCR10PN VPS05604
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original
    BCR10PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 W1s transistor marking W1S BCR10PN VPS05604 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR 10PN NPN/PNP Silicon Digital Transistor Array 4 5  Switching circuit, inverter, interface circuit, 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation


    Original
    VPS05604 OT-363 EHA07193 EHA07176 OT-363 Mar-28-2001 PDF

    marking code w1s

    Abstract: infineon marking W1s
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original
    BCR10PN EHA07176 EHA07193 OT-363 OT363 marking code w1s infineon marking W1s PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original
    BCR10PN EHA07176 OT-363 EHA07193 PDF