Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING WA SOT-23 DIODE Search Results

    MARKING WA SOT-23 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING WA SOT-23 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD20

    Abstract: ksd 190 ksd2090 marking z3d
    Text: WA SDZ5V6WA Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V6WA Marking Package Code Z3D SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3


    Original     		PDF OT-23 KSD-2090-000 KSD20 ksd 190 ksd2090 marking z3d

    marking WJ sot-23

    Abstract: marking wa sot-23 MARKING WB SOT-23 SOT-23 WU BZX84B4V3 marking WZ sot-23 wT 3 sot23 ZENER MARKING WM SOT-23 WD sot-23 SOT23 WU
    Text: BZX84B4V3 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 51 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Zener Voltages from 4.3~51V .103(2.60) • Ideally Suited for Automated Assembly Processes .047(1.20) .056(1.40)


    Original     		PDF BZX84B4V3 410mW MIL-STD-750, OT-23, marking WJ sot-23 marking wa sot-23 MARKING WB SOT-23 SOT-23 WU marking WZ sot-23 wT 3 sot23 ZENER MARKING WM SOT-23 WD sot-23 SOT23 WU

    MARKING X4 SOT23

    Abstract: No abstract text available
    Text: BZX84-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Zener Voltages from 2.4~75V .103(2.60) • Ideally Suited for Automated Assembly Processes .047(1.20) .056(1.40)


    Original     		PDF BZX84-C2V4 410mW MIL-STD-750, OT-23, MARKING X4 SOT23

    marking WJ sot-23

    Abstract: MARKING W2 SOT23 wT 3 sot23 ZENER MARKING WB SOT-23 marking wa sot-23 marking W6 sot23 SOT-23 MARKING w5 marking WM sot-23 7v5, sot-23 WL sot23
    Text: BZX84-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Zener Voltages from 2.4~75V .103(2.60) • Ideally Suited for Automated Assembly Processes .047(1.20) .056(1.40)


    Original     		PDF BZX84-C2V4 410mW MIL-STD-750, OT-23, marking WJ sot-23 MARKING W2 SOT23 wT 3 sot23 ZENER MARKING WB SOT-23 marking wa sot-23 marking W6 sot23 SOT-23 MARKING w5 marking WM sot-23 7v5, sot-23 WL sot23

    GE 43 marking zener

    Abstract: BZX84C15
    Text: DATA SHEET BZX84C SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 - 39 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES • Planar Die construction .103(2.60) Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .083(2.10) .066(1.70) MECHANICAL DATA


    Original     		PDF BZX84C 410mW OT-23, MIL-STD-202, CHARA25 GE 43 marking zener BZX84C15

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G02 353/SC V = Device Code

    zener sot23

    Abstract: wT 3 sot23 ZENER
    Text: BZX84C SERIES PB FREE PRODUCT SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 - 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES • Planar Die construction .056(1.40) MECHANICAL DATA • Case: SOT-23, Molded Plastic .083(2.10) .066(1.70) • Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BZX84C OT-23, MIL-STD-202, 410mW zener sot23 wT 3 sot23 ZENER

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		PDF MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1GU04 MC74HC 353/SC T138A U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code

    MC74HC

    Abstract: marking t132 marking code V6 diode V = Device Code
    Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G04 MC74HC 353/SC marking t132 marking code V6 diode V = Device Code

    transistor g23 mosfet

    Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
    Text: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;


    OCR Scan     		PDF 000530b 569-GS transistor g23 mosfet 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF 00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070