marking R1B
Abstract: TRANSISTOR C 2026 transistor marking wn MMBT918
Text: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram
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PDF
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MMBT918
2002/95/EC
OT-23,
MIL-STD-750,
marking R1B
TRANSISTOR C 2026
transistor marking wn
MMBT918
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400V 100MA NPN SOT23
Abstract: MMBTA44 eb6 sot23 A44 transistor MARKING A44
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic
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Original
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PDF
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MMBTA44
300mA
2002/95/EC
OT-23,
MIL-STD-750,
400V 100MA NPN SOT23
MMBTA44
eb6 sot23
A44 transistor
MARKING A44
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Untitled
Abstract: No abstract text available
Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
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BC856
-100mA
BC846/BC847/BC848/BC849
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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PDF
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MMBT2369A
200mA
2002/95/EC
OT-23,
MIL-STD-750,
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MMBT2369A
Abstract: Transistor General Purpose Transistor FE SOT
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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PDF
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MMBT2369A
200mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBT2369A
Transistor General Purpose Transistor
FE SOT
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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PDF
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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MMBTA44
Abstract: marking a44 transistor marking wn A44 transistor
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volts POWER SOT- 23 225 mWatts Unit: inch mm FEATURES .056(1.40) .103(2.60) • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20) .119(3.00) .110(2.80) • Collector-emitter voltage VCE = 400V
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PDF
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MMBTA44
300mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBTA44
marking a44
transistor marking wn
A44 transistor
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MMBTA42
Abstract: No abstract text available
Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic
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PDF
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MMBTA42
500mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBTA42
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code marking ssi sot-23
Abstract: mmbt918 MMBT918R
Text: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon 0.120 3.04 • / 0.110(2.80) *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH MECHANICAL DATA
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PDF
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MMBT918
OT-23,
MIL-STD-750,
code marking ssi sot-23
mmbt918
MMBT918R
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2011/65/EU directives.
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PDF
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MMBT2369A
200mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
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MMBT4401
Abstract: transistor m4a
Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .103(2.60) .086(2.20) .056(1.40) .047(1.20) • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives
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PDF
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MMBT4401
600mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBT4401
transistor m4a
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Untitled
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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PDF
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
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"marking s1a" sot-23
Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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PDF
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
"marking s1a" sot-23
1N916
MMBT3904
MMBT3904 40V SOT23
transistor marking s1a
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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PDF
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MMBT2369A
200mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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eb6 sot23
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR POWER 400 Volts 225 mWatts SOT-23 Unit:inch mm • Silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH
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PDF
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MMBTA44
300mA
OT-23
OT-23,
MIL-STD-750,
RB500V-40
MMBTA44
eb6 sot23
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives
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PDF
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MMBT3906
-200mA
2002/95/EC
OT-23,
MIL-STD-750,
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1N916
Abstract: MMBT3906
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives
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PDF
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MMBT3906
-200mA
2002/95/EC
OT-23,
MIL-STD-750,
1N916
MMBT3906
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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PDF
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volt POWER 225 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • Silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive
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Original
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PDF
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MMBTA44
300mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2014-REV
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Untitled
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volts SOT-23 225 mWatts Unit:inch mm • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) 0.006(0.15)MIN. FEATURES • /
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PDF
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
OT-23
OT-23,
MIL-STD-750,
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s2A SOT23
Abstract: SOT-23 marking S2A
Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts POWER 40 Volts SOT-23 Unit:inch mm • PNP epitaxial silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = -40V 0.103(2.60) • Collector current IC = -200mA
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PDF
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MMBT3906
-200mA
OT-23
OT-23,
MIL-STD-750,
RB500V-40
s2A SOT23
SOT-23 marking S2A
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Untitled
Abstract: No abstract text available
Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA
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Original
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PDF
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MMBT4401
600mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: MMBTA42-AU NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • • • • • Collector current IC = 500mA Acqire quality system certificate : TS16949
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PDF
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MMBTA42-AU
500mA
TS16949
AEC-Q101
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2013-REV
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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PDF
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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