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    MARKING WUS SOT Search Results

    MARKING WUS SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING WUS SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking WUS sot

    Abstract: No abstract text available
    Text: BCR 162W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162W WUs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


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    PDF OT-323 Nov-26-1996 Marking WUS sot

    Q62702-C2378

    Abstract: Marking WUS sot
    Text: BCR 162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162 WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23


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    PDF Q62702-C2378 OT-23 Nov-26-1996 Q62702-C2378 Marking WUS sot

    BCR162

    Abstract: No abstract text available
    Text: BCR162 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23


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    PDF BCR162 VPS05161 EHA07183 Nov-29-2001 BCR162

    BCR162

    Abstract: No abstract text available
    Text: BCR162 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23


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    PDF BCR162 VPS05161 EHA07183 Jul-16-2001 BCR162

    DIN 6784

    Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


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    PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 Aug-29-2003 DIN 6784 BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75

    Untitled

    Abstract: No abstract text available
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


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    PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 Aug-29-2003

    BCR162F

    Abstract: BCR162 BCR162L3 BCR162T SC75
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


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    PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 Aug-29-2003 BCR162F BCR162 BCR162L3 BCR162T SC75

    Untitled

    Abstract: No abstract text available
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B


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    PDF BCR162. BCR162/F/L3 BCR162T EHA07183 BCR162 BCR162F BCR162L3 dissipationBCR162,

    Untitled

    Abstract: No abstract text available
    Text: BCR 162 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 162 WUs Pin Configuration 1=B 2=E Package 3=C SOT-23


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    PDF VPS05161 EHA07183 OT-23 Oct-19-1999

    BCR162F

    Abstract: BCR162 BCW66
    Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR162/F C 3 R1 R2


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    PDF BCR162. BCR162/F EHA07183 BCR162 BCR162F BCR162F BCR162 BCW66

    iC101

    Abstract: IC-101 Marking WUS sot BCR35PN VPS05604 CONFIGURATION OF IC IC Marking AC 6 PIN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


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    PDF BCR35PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Nov-29-2001 iC101 IC-101 Marking WUS sot BCR35PN VPS05604 CONFIGURATION OF IC IC Marking AC 6 PIN

    VPS05604

    Abstract: Marking WUS sot
    Text: BCR 35PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) 2 1 VPS05604


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    PDF VPS05604 OT-363 EHA07193 EHA07176 OT-363 Oct-19-1999 VPS05604 Marking WUS sot

    Marking WUS sot

    Abstract: transistor Common collector configuration Common collector configuration pnp array Q62702-C2495
    Text: BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) Tape loading orientation


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    PDF Q62702-C2495 OT-363 Nov-26-1996 Marking WUS sot transistor Common collector configuration Common collector configuration pnp array

    Marking WUS sot

    Abstract: MARKING CODE wus SOT363
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


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    PDF BCR35PN VPS05604 EHA07193 OT-363 EHA07176 OT363 Marking WUS sot MARKING CODE wus SOT363

    infineon marking W1s

    Abstract: BCR108S BCR35PN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)


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    PDF BCR35PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR108S BCR35PN

    Untitled

    Abstract: No abstract text available
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original
    PDF BCR35PN VPS05604 EHA07193 OT-363 EHA07176 OT363

    Untitled

    Abstract: No abstract text available
    Text: BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR162 C 3 R1 R2 1 B 2


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    PDF BCR162 EHA07183

    Untitled

    Abstract: No abstract text available
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original
    PDF BCR35PN EHA07176 OT-363 EHA07193

    Untitled

    Abstract: No abstract text available
    Text: BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR162 C 3 R1 R2 1 B 2


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    PDF BCR162 EHA07183

    marking 215

    Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original
    PDF BCR35PN EHA07176 EHA07193 OT-363 OT363 marking 215 MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 162 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drivere circuit * Built in bias resistor R1=4.7ki2, R2=4.7kQ Type BCR 162 Marking Ordering Code Pin Configuration WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23


    OCR Scan
    PDF Q62702-C2378 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 162 PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, drivere circuit »Built in bias resistor R-|=4.7kii, R2=4.7kQ □ ET Type Marking Ordering Code Pin Configuration BCR 162 WUs Q62702-C2378 1=B Package 2=E 3=C


    OCR Scan
    PDF Q62702-C2378 OT-23 015G7Ã BE35b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan
    PDF OT-363 Q62702-C2495

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan
    PDF 10kiJ, Q62702-C2495 OT-363