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    MARKING WV1 Search Results

    MARKING WV1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING WV1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIL-M-87958

    Abstract: X0640 BMS-13-47 lms9000 T612M-DS MV203 snap on tools for electronic BMS13-47 RT-1805 CR-107
    Text: C O N T E N T S WIRE AND HARNESS ID P R O D U C T S 2 Heat Shrink/Cable Markers Performance Labels Self-Laminating Labels Pre-Printed Wire & Cable Markers LABEL ID PRODUCTS 64 Product Code Cross Reference Thermal Transfer Labels Dot Matrix Labels Laser Labels


    Original     		PDF WV-762508-2 ZH-SCE-1K-11/2-2 ZH-SCE-1K-3/16-2 ZH-SCE-1K-3/32-2 MIL-M-87958 X0640 BMS-13-47 lms9000 T612M-DS MV203 snap on tools for electronic BMS13-47 RT-1805 CR-107

    H1061

    Abstract: H1037 11f60
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS CDA Series Solventproof 125℃ 1,000~2,000Hrs assured. WV Vertical SMD type. Wide Temperature range. For ECU, ESA RoHS compliant. MVK 80VDC CDA Wide Temp. SPECIFICATIONS Item Characteristics Rated Voltage Range


    Original     		PDF 000Hrs 80VDC 120Hz) H1061 H1037 11f60

    KTT-381127-5-1A

    Abstract: electronic component identification X0640 X12106 101-T1K-10 hw101 NC-254097-10-9 M2541 1318p m5330
    Text: Label ID Products THERMAL TRANSFER LABELS WP White Polyester . . . . . . . . . . . . . . . . .80 CP Clear Polyester . . . . . . . . . . . . . . . . . .82 HW HighTack White Polyester . . . . . .84 HM High Tack Metalized Polyester . .86 MP Metalized Polyester . . . . . . . . . . . . .88


    Original     		PDF

    MV203

    Abstract: M5330 T2K12 HM305
    Text: Label ID Products CROSS REFERENCE Label format - Product Order Code . . .87 THERMAL TRANSFER LABELS NC Nylon Cloth Terminal Markers . .110 Kapton Labels . . . . . . . . . . . . . . . . . . . . .112 T1K Standard Polyimide . . . . . . . . . . .113 T2K High-performance Polyimide . .114


    Original     		PDF LEB2-1318P LEB2-1325P MV203 M5330 T2K12 HM305

    3-EW10F

    Abstract: LM 3390 ep1016 MV203
    Text: Label ID Products CROSS REFERENCE Label format - Product Order Code . . .87 THERMAL TRANSFER LABELS NC Nylon Cloth Terminal Markers . .110 Kapton Labels . . . . . . . . . . . . . . . . . . . . .112 T1K Standard Polyimide . . . . . . . . . . .113 T2K High-performance Polyimide . .114


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION JULY 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating – 12 µW (typical) CMOS standby


    Original     		PDF IS62WV10248EALL/BLL IS65WV10248EALL/BLL 62/65WV10248EALL) 62/65WV10248EBLL) IS62WV10248EALL/ IS62WV10248EBLL IS62WV10248EBLL-55TLI IS62WV10248EBLL-55BI IS62WV10248EBLL-55BLI IS62WV10248EBLL-45TLI

    Untitled

    Abstract: No abstract text available
    Text: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION AUGUST 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating


    Original     		PDF IS62WV10248EALL/BLL IS65WV10248EALL/BLL 62/65WV10248EALL) 62/65WV10248EBLL) IS62WV10248EALL/ IS62WV10248EBLL ThisIS62WV10248EBLL-55TLI IS62WV10248EBLL-55BI IS62WV10248EBLL-55BLI IS62WV10248EBLL-45TLI

    Equivalent ana 650

    Abstract: qtc 2730
    Text: r, I i, ; . MIL.c-39012/z5E +%$%+= RI L-C-39012/250 6 October 1983 MILITARY YECIFICAT]ON sME1 CONUICTOAS, CWIAA , RAOIOFR20UfNCY HAROUANIFOR RAOILTREQLENCYCOASIM CW4ECTORS This specification fs approved for use by all DepartIWItS and Agensies of the LSsp4rt5ent of DefetTSe.


    Original     		PDF c-39012/z5E L-C-39012/250 RAOIOFR20UfNCY 0001SS) lU\-C-39012. 51Lhfn ACGl143A/U N39cU2/2S-EOOS u7-1144/u 39032/2S Equivalent ana 650 qtc 2730

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416EALL IS62/65WV102416EBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •      High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating


    Original     		PDF IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 62/65WV102416EALL) 62/65WV102416EBLL) IS62WV102416EALL/BLL IS65WV102416EALL/BLL 1024K 16bits. IS65WV102416EALL-55BA3

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416EALL IS62/65WV102416EBLL ADVANCED INFORMATION JULY 2013 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •      High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating – 12 µW (typical) CMOS standby


    Original     		PDF IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 62/65WV102416EALL) 62/65WV102416EBLL) IS62WV102416EALL/BLL IS65WV102416EALL/BLL 1024K 16bits. IS65WV102416EALL-55BA3

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416EALL IS62/65WV102416EBLL PRELIMINARY INFORMATION JULY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •      High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating – 12 µW (typical) CMOS standby


    Original     		PDF IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 62/65WV102416EALL) 62/65WV102416EBLL) IS62WV102416EALL/BLL IS65WV102416EALL/BLL 1024K 16bits. IS65WV102416EALL-55BA3

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416EALL IS62/65WV102416EBLL PRELIMINARY INFORMATION MAY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •      High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating – 12 µW (typical) CMOS standby


    Original     		PDF IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 62/65WV102416EALL) 62/65WV102416EBLL) IS62WV102416EALL/BLL IS65WV102416EALL/BLL 1024K 16bits. IS65WV102416EALL-55BA3

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416EALL IS62/65WV102416EBLL PRELIMINARY INFORMATION MARCH 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •      High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating – 12 µW (typical) CMOS standby


    Original     		PDF IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 62/65WV102416EALL) 62/65WV102416EBLL) IS62WV102416EALL/BLL IS65WV102416EALL/BLL 1024K 16bits. IS65WV102416EALL-55BA3

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION JULY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION MARCH 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION MAY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    wv5 marking

    Abstract: LQM31P MIC23250 MIC23250-C4YMT MIC23250-G4YMT MIC23250-GFHYMT Hyper PWM marking WV5 WV3 47 WV3 diode
    Text: MIC23250 4MHz Dual 400mA Synchronous Buck Regulator with HYPER LIGHT LOAD General Description Features The MIC23250 is a high efficiency 4MHz dual 400mA synchronous buck regulator with Hyper Light Load™. Hyper Light Load™ provides all the advantages of standard light


    Original     		PDF MIC23250 400mA MIC23250 400mA M9999-121707-A wv5 marking LQM31P MIC23250-C4YMT MIC23250-G4YMT MIC23250-GFHYMT Hyper PWM marking WV5 WV3 47 WV3 diode

    wv4 marking code

    Abstract: WV5 MICREL MLF MARKING WV3 marking CODE WV5
    Text: MIC23250 4MHz Dual 400mA Synchronous Buck Regulator with HyperLight Load General Description Features The MIC23250 is a high efficiency 4MHz dual 400mA • Input voltage: 2.7V to 5.5V HyperLight Load™ synchronous buck regulator with HyperLight Load™ mode.


    Original     		PDF MIC23250 400mA MIC23250 400mA 400mA/400mA M9999-111108-D wv4 marking code WV5 MICREL MLF MARKING WV3 marking CODE WV5

    marking WV5

    Abstract: wv5 marking wv4 marking code marking CODE WV5 WV3 diode wv3 transistor WV5 MICREL MLF marking WV4 MIC23250 MIC23250-C4YMT
    Text: MIC23250 4MHz Dual 400mA Synchronous Buck Regulator with HyperLight Load General Description Features The MIC23250 is a high efficiency 4MHz dual 400mA • Input voltage: 2.7V to 5.5V HyperLight Load™ synchronous buck regulator with HyperLight Load™ mode.


    Original     		PDF MIC23250 400mA MIC23250 400mA 400mA/400mA M9999-071409-E marking WV5 wv5 marking wv4 marking code marking CODE WV5 WV3 diode wv3 transistor WV5 MICREL MLF marking WV4 MIC23250-C4YMT

    transistor kc 2026

    Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
    Text: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019

    1rf9530

    Abstract: No abstract text available
    Text: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF D14642 IRF9530 O-220 1rf9530

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108