capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Text: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications
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TPCAM0198
5OKB10
B-1050
capacitor poliester 100nf
CAPACITOR 5D 3KV
5d 3kv
kje y4
capacitor 100nF poliester
Thomson csf ceramic capacitor
IEC-384-9
capacitor poliester 10nf
Carimbo ceramic capacitor
5OQ322MAEAA
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Y5P 1NF
Abstract: n220 N4700 N2200 560pF n150 transistor 15nf marking 222 N1500 N330
Text: Disc Ceramic Capacitors Marking DIG. 2 Logo: Only in diam. ≥ 6mm O TC / Class General Purpose A = NP0 / I *B = P100 / I *C = N150 / I *D = N220 / I *E = N330 / I *F = N470 / I G = N750 / I H = N1500 / I *I = N2200 / I *J = N4700 / I K = SL M = Y5E / II N = Y5F / II
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N1500
N2200
N4700
100pF
120pF
150pF
180pF
Y5P 1NF
n220
560pF
n150 transistor
15nf
marking 222
N330
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Multilayer Capacitor 0.1 uF 50V
Abstract: D55X5 D47X5T2A104 D33X D55X5T1H104 D67X D33X5T1H103 D33X5T1H marking X5T
Text: General-Purpose Leaded Type X5T Temperature Characteristics Features • High dielectric constant that enables compact capacitors • Close-grained ceramic and superior film quality that ensure high reliability and superior humidity resistance • Good temperature characteristics, bias voltage
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10-55-10Hz
D55X5T1H104M
Multilayer Capacitor 0.1 uF 50V
D55X5
D47X5T2A104
D33X
D55X5T1H104
D67X
D33X5T1H103
D33X5T1H
marking X5T
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X5T953
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A
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ZX5T953G
OT223
-100V
-90mV
AEC-Q101
OT223
J-STD-020
DS33425
X5T953
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A
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ZX5T953G
OT223
-100V
-90mV
AEC-Q101
J-STD-020
DS33425
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X5T851
Abstract: ZX5T951G marking X5T
Text: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current
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ZX5T851G
OT223
-60mV
ZX5T951G
AEC-Q101
OT223
J-STD-020
DS33421
X5T851
marking X5T
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X5T951
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current
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ZX5T951G
OT223
-70mV
ZX5T851G
AEC-Q101
OT223
J-STD-020
DS33424
X5T951
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZX5T953G
OT223
-100V
-90mV
AEC-Q101
OT223
J-STD-020
DS33425
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X5T955
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZX5T955G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZX5T955G
OT223
-140V
-120mV
AEC-Q101
OT223
J-STD-020
ZX5T955G
DS33426
X5T955
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X7T voltage dependence
Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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ISO14001
C02E-17
X7T voltage dependence
GRM155B31A225K
GR331
GRM155R71E104K
GRM188R61E475
GRM188R71C105KA12
GRM1555C1HR10BA01
GRM32ER71H106KA12
GRM0222C1A101GD05
GRM188D71
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SOT-223 X5T
Abstract: A550C
Text: High Energy Corporation Contents HF HIGH VOLTAGE CERAMIC WATER COOLED CAPACITORS: PWC SERIES. 2 LOW INDUCTANCE, HIGH RF POWER DOUBLE CUPS: SPHT SERIES. 3 RF TRANSMITTING CAPACITORS: AN OVERVIEW.
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ZX5T853G
Abstract: ZX5T853GTA ZX5T853GTC
Text: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T853G
OT223
OT223
ZX5T853GTA
ZX5T853GTC
ZX5T853G
ZX5T853GTA
ZX5T853GTC
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ZX5T953GTA
Abstract: ZX5T953G ZX5T953GTC x5t953
Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T953G
OT223
-100V
OT223
ZX5T953GTA
ZX5T953GTC
ZX5T953GTA
ZX5T953G
ZX5T953GTC
x5t953
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X5T955
Abstract: No abstract text available
Text: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATOIN TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T955G
OT223
-140V
OT223
ZX5T955GTA
ZX5T955GTC
X5T955
X5T955
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X5T951
Abstract: No abstract text available
Text: ZX5T951A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T951A
ZX5T951ASTOA
ZX5T951ASTZ
X5T951
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X5T851
Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T851A
ZX5T851ASTOA
ZX5T851ASTZ
X5T851
ZX5T851A
ZX5T851ASTOA
ZX5T851ASTZ
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Untitled
Abstract: No abstract text available
Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN2005G
ZX5T869G
OT223
OT223
ZX5T869GTA
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sot223 device Marking
Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T869G
OT223
OT223
Q26100
sot223 device Marking
npn 20A
ZX5T869G
ZX5T869GTA
ZX5T869GTC
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X5T951
Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
Text: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in
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ZX5T951G
OT223
OT223
X5T951
ZX5T951G
ZX5T951GTA
ZX5T951GTC
Bv 42 transistor
ZX5T951GT
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X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
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U103M29Y5
Abstract: u503m2 UK50-104
Text: SERIES U r ~ - i Ultra-Kap, 3VDC through 100VDC, Low Voltage El A Class IV Ceramic Capacitors DESCRIPTION: Ph ilips Components Ultra-Kap capacitors provide many advantages when compared to ordinary ceramic capacitors. Their unique semi-conductor
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100VDC,
ava33
U103M29Y5
u503m2
UK50-104
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T309K
Abstract: T101K99U2JT850S 850S-50Z 853A T500K philips catalog components T200K99U2JT854A marking X5T T500K99COGW8570 857-25Z
Text: Ceramic Capacitors Series T 5KVDC through 20KVDC RF Rated, Transmitting, Special Applications Ceramic Capacitors Description Philips Components RF Rated, ceramic transmitting capacitors are designed primarily for use in applications where very high RF currents, high KVA ratings and high working
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20KVDC
850-Series
T500K99COGW
99U2JW
T201K99U
2JV8570
857-25Z
857-50Z
857-200N
10OpF
T309K
T101K99U2JT850S
850S-50Z
853A
T500K
philips catalog components
T200K99U2JT854A
marking X5T
T500K99COGW8570
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Untitled
Abstract: No abstract text available
Text: rjtlrLowlnductance, ^ ^ Ifiig h C a p a c ita n c e SPDH Series SPECIFICATIONS High RF Current Disc Capacitors Capacitance Value pF — 10,000 20,000 50,000 Capacitance Tolerance — @ 2 5 °C ±20% ±20% GMV or + 8 0 - 20% Rated DC voltage — 25 KVDC 25 KVDC
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N5250
SDC14202MA
SDC14252MA
SDC14302M
SDC13402M
SDC13502M
SDC12602MA
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marking z5e capacitor
Abstract: No abstract text available
Text: TUSONIX 1.0 1.1 1.2 1.3 GENERAL SPECIFICATIONS MECHANICAL Case: Conformal coated. Lead Material: Copper clad steel. Terminal Strength: Mil-Std-202, Method 211, Condition A radial . 2 lbs. TUSONIX style 8121 and smaller. 5 lbs. TUSONIX style 8131 and larger.
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Mil-Std-202,
N4700
N5600
marking z5e capacitor
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