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    MARKING YB Search Results

    MARKING YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING YB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking YB

    Abstract: YB MARKING KRC822U
    Text: SEMICONDUCTOR KRC822U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


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    KRC822U marking YB YB MARKING KRC822U PDF

    KRC822E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC822E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


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    KRC822E KRC822E PDF

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code PDF

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage


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    BAT54SWT1G/BAT54CWT1G BAT54SWT1G BAT54CWT1G OT-323 BAT54SWT1G/BAT54CWT1G PDF

    BAT54CWT1G

    Abstract: BAT54SWT1G
    Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage


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    BAT54SWT1G/BAT54CWT1G BAT54SWT1G BAT54CWT1G OT-323 BAT54SWT1G/BAT54CWT1G BAT54CWT1G BAT54SWT1G PDF

    capacitive touch sensor pcb guideline

    Abstract: ticomel transformer electronic passive components catalog EN132400 znr 10k varistor s241000 5500.206 "SCHURTER" "Catalogue"
    Text: Product Group Catalog EMC Products www.schurter.com/emc 1-Phase Line Filters  www.schurter.com > summary Intro Information 4 1-phase line filters Keyword Index Product Datasheets 6 6 12 General Product Information Product Standard / Definitions / CE-Marking / Conformity


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    schottky diode cross reference

    Abstract: FYV0203DSMTF FAIRCHILD DIODE
    Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted


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    FYV0203S/DN/DP/DS FYV0203S FYV0203DP FYV0203S FYV0203DN FYV0203DP FYV0203DS OT-23 FYV0203DN schottky diode cross reference FYV0203DSMTF FAIRCHILD DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted


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    FYV0203S/DN/DP/DS OT-23 FYV0203S FYV0203DP FYV0203DN FYV0203DS FYV0203DN FYV0203DP PDF

    FYV0203DN

    Abstract: FYV0203DP FYV0203DS FYV0203S
    Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted


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    FYV0203S/DN/DP/DS OT-23 FYV0203S FYV0203DP FYV0203DN FYV0203DS FYV0203DN FYV0203DP FYV0203S PDF

    74HC4316A

    Abstract: MC14016 MC14066 MC74HC4316A 948F HC4316A
    Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and http://onsemi.com Digital Power Supplies High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low


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    MC74HC4316A MC74HC4316A HC4316A MC14016 MC14066, HC4066A. r14525 MC74HC4316A/D 74HC4316A MC14066 948F PDF

    74HC4316A

    Abstract: 948F HC4066A HC4316A MC14016 MC14066 MC74HC4316A
    Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies http://onsemi.com High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low


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    MC74HC4316A MC74HC4316A HC4316A MC14016 MC14066, HC4066A. r14525 MC74HC4316A/D 74HC4316A 948F HC4066A MC14066 PDF

    Untitled

    Abstract: No abstract text available
    Text: LIEKKI Yb1200-6/125 – Single Mode Ytterbium Doped Fiber LIEKKITM Yb1200-6/125 fibers are highly doped single mode fibers for medium power fiber laser and amplifier applications. Their telcom-like geometry makes them compatible with many fiber based components like fiber gratings and combiners. They are ideal fibers for low-cost marking lasers and


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    Yb1200-6/125 Yb1200-6/125 Yb1200-6/125DC) Yb1200-6/125DC-PM) 0E-04 PDF

    MARKING a1n

    Abstract: K145 marking CB-115 A1N4148 4148d marking K145 1N3600 3604 CB145
    Text: ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS AC TIF S POUR CIRCUITS H YBRIDES CB-145 CB-115 TM -3 Planar silicon diodes Typa Type Marking Marquage Diodes planar au silicium Pin conf. Brochage VR (V) 'o (mA) ♦ VF (V) / / 'F (mA) max / 'r ' (iJA) / VR


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    CB-115 CB-145 CB-145 A1N914 MARKING a1n K145 marking A1N4148 4148d marking K145 1N3600 3604 CB145 PDF

    q406 transistor

    Abstract: nf 820 transistor q406 q406 transistor data
    Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q


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    Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data PDF

    sot marking code ZS

    Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
    Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


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    OT-23 sot marking code ZS Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M PDF

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    900MHz Q62702-F1501 OT-343 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking


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    0Qlb747 Q62702-F550 Q62702-F979 T-31-17 23b320 PDF

    BFQ64

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings


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    BFQ64 OT-89 BFQ64 PDF

    TRANSISTOR MARKING YB

    Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
    Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj


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    3904PN Q62702-C OT-363 3904PN TRANSISTOR MARKING YB sot36 3904P marking code Yb Transistor 70 sot3-6 PDF

    2907a

    Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
    Text: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration


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    Q68000-A6501 Q68000-A6474 OT-23 EHP0075I 2907a 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    Q62702-F1382 OT-143 235bQ5 BFP183 900MHz PDF