marking yw
Abstract: MMBTA93 YW marking MARKING yw SOT23
Text: SEMICONDUCTOR MMBTA93 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking YW No. 1 Item Marking Device Mark YW MMBTA93 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
|
Original
|
MMBTA93
OT-23
marking yw
MMBTA93
YW marking
MARKING yw SOT23
|
PDF
|
PAM3101DAB
Abstract: PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280
Text: PAM3101 300mA High PSRR Low Dropout CMOS Linear Regulator Features General Description n Low Dropout Voltage: 180mV@300mA V O=3.3V n Output Voltage Accuracy within ±2% n Quiescent Current : 65 A Typ. n High PSRR: 70dB@1kHz n Excellent Line and Load Regulation
|
Original
|
PAM3101
300mA
180mV
300mA
OT-23
OT-89
PAM3101
SC70-3L
PAM3101DAB
PAM3101DAB180
PAM3101AAA250
PAM3101DAB300
P3101E
PAM3101DAB250
OT89-5
capacitor a475
P3101I
PAM3101DAB280
|
PDF
|
SOT23 PAB
Abstract: No abstract text available
Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP2004K
-150mA
-430mA
AEC-Q101
DS30933
SOT23 PAB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) max • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP2004K
-430mA
-150mA
DS30933
|
PDF
|
MARKING tAN SOT-23
Abstract: sot-23 marking code pe L630 IRLML2402 YW marking marking yw
Text: IRLML2402 Package Outline HEXFET MICRO3 SOT-23 Outline Dimensions are shown in millimeters (inches) D - B - 3 E -A - L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN 3 3 D IM A H 1 0 . 20 ( .0 0 8 ) 2 M A M e e1 θ A -C B 0. 1 0 (.0 0 4 )
|
Original
|
IRLML2402
OT-23)
MARKING tAN SOT-23
sot-23 marking code pe
L630
IRLML2402
YW marking
marking yw
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BL8554 300mA High PSRR, Linear Regulator DESCRIPTION FEATURES BL8554 series is a group of positive voltage output, low power consumption, low dropout voltage regulator. • • • • BL8554 can provide output value in the range of 1.0V~4.5V every 0.1V step. It also can be
|
Original
|
BL8554
300mA
BL8554
SC70-5
3000Pcs
|
PDF
|
sot-23 marking code pe
Abstract: IRLML6401 SOT-23 MARKING tAN SOT-23 gi 9532 MARKING EK SOT-23 marking bad sot-23 IRLML5103 irlml2402 IRLML2803 IRLML6401
Text: IRLML2402 Package Outline HEXFET MICRO3 SOT-23 Outline Dimensions are shown in millimeters (inches) D - B - 3 E -A - L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN 3 3 D IM A H 1 0 . 20 ( .0 0 8 ) 2 M A M e e1 θ A -C B 0. 1 0 (.0 0 4 )
|
Original
|
IRLML2402
OT-23)
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
sot-23 marking code pe
IRLML6401 SOT-23
MARKING tAN SOT-23
gi 9532
MARKING EK SOT-23
marking bad sot-23
IRLML5103
irlml2402
IRLML2803
IRLML6401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMG3415U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Low Noise , Fast Transient 1A Step-Down Converter Product Description Features The GS5581 is a 2MHz step-down converter with an input voltage range of 2.7V to 5.5V and output voltage as low as 0.6V. It is optimized to react quickly to a load
|
Original
|
GS5581
Lane11
|
PDF
|
marking code YW DIODE
Abstract: J-STD-020D MMBD7000HC MMBD7000HS-7-F
Text: MMBD7000HS /HC DUAL SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • NEW PRODUCT Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion
|
Original
|
MMBD7000HS
OT-23
J-STD-020D
MIL-STD-202,
DS31782
marking code YW DIODE
J-STD-020D
MMBD7000HC
MMBD7000HS-7-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP2004K
-430mA
-150mA
AEC-Q101
DS30933
|
PDF
|
DMP2004K-7
Abstract: No abstract text available
Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP2004K
-430mA
-150mA
AEC-Q101
DS30933
621-DMP2004K-7
DMP2004K-7
DMP2004K-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RClamp1224S Low Capacitance TVS for ADSL Interfaces PROTECTION PRODUCTS - RailClamp Description Features Transient protection for high-speed data lines to RailClamp® TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed
|
Original
|
RClamp1224S
5/50ns)
|
PDF
|
USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection
Abstract: ECLAMP2122S sot-23 marking code 352 marking code YW DIODE
Text: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB 2.0 interfaces. This device utilizes solid-state
|
Original
|
2122S
USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection
ECLAMP2122S
sot-23 marking code 352
marking code YW DIODE
|
PDF
|
|
|
122 sot23 6pin usb
Abstract: USB land pattern
Text: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB interfaces. This device utilizes solid-state
|
Original
|
2122S
122 sot23 6pin usb
USB land pattern
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at Case: SOT23
|
Original
|
MMBD3004A/C/S
100nA
J-STD-020
MIL-STD-202,
DS30353
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB interfaces. This device utilizes solid-state
|
Original
|
EClamp2122S
2122S
|
PDF
|
2DC2412R
Abstract: No abstract text available
Text: 2DC2412R 50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: molded plastic, “Green” molding compound
|
Original
|
2DC2412R
AEC-Q101
J-STD-020
MIL-STD-202,
2DC2412R-7
DS31241
2DC2412R
|
PDF
|
AP1531
Abstract: AH276K-PL-B AP13933WA AP131-18YA AH175WL-7 T77Z102.13 AP1117C AP1117CE33G-13 AP2191ASG-13 transistor+smd+zG+13
Text: INFORMATIONAL PRODUCT CHANGE NOTICE Initial Final DCS/ICN-1140 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: July 24, 2009 Immediate Analog Semiconductors Marking Change ICN #: 1140 TITLE Date Code Marking Update IMPACT Change in device marking format. Improved product traceability.
|
Original
|
DCS/ICN-1140
40W6G-7
APX825A-44W6G-7
APX825A-46W6G-7
ATS137-PL-A
ATS137-PL-A-A
ATS137-PLA-B
ATS137-PL-A-B
ATS137-PL-B
ATS137-PL-B-A
AP1531
AH276K-PL-B
AP13933WA
AP131-18YA
AH175WL-7
T77Z102.13
AP1117C
AP1117CE33G-13
AP2191ASG-13
transistor+smd+zG+13
|
PDF
|
mosfet Marking SAs
Abstract: SAs SOT-23 marking Diode smd code sm 97
Text: PD - 9.1257B International 3BR Rectifier IR L M L 2 4 0 2 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel M O S FE T S O T -23 Footprint Low Profile <1.1 mm Available in Tape and Reel
|
OCR Scan
|
1257B
mosfet Marking SAs
SAs SOT-23 marking
Diode smd code sm 97
|
PDF
|
SOT-23-5L cmos
Abstract: No abstract text available
Text: 300mA CMOS LDO Product Description Features The GS2903 series of positive linear regulators feature low quiescent current Typ. 65uF with low dropout voltage, making them ideal for battery powered applications. Space-saving SOT-23 SOT-23-3LSOT-89 and SOT-23-5L package are
|
Original
|
300mA
GS2903
OT-23
OT-23-3Lã
OT-89
OT-23-5L
230mV
300mA
Lane11
SOT-23-5L cmos
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD- 93757A IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.045Ω S Description These N-Channel MOSFETs from International Rectifier
|
Original
|
3757A
IRLML2502
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 800mA Synchronous Buck Switching Regulator Product Description Features The GS5578 is a step-down, current mode, DC-DC converter. At heavy load, the constant-frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in portable
|
Original
|
800mA
GS5578
Lane11
|
PDF
|
diode SMD MARKING CODE yw
Abstract: smd diode marking 9 ba MARKING tAN SOT-23 diode
Text: PD - 9.1 2 6 0 C International lö R Rectifier IR L M L 5 1 0 3 PRELIMINARY H E XFE T Pow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel
|
OCR Scan
|
OT-23
diode SMD MARKING CODE yw
smd diode marking 9 ba
MARKING tAN SOT-23 diode
|
PDF
|
