Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
|
Original
|
LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking
|
Original
|
LBA277T1
|
PDF
|
sod523 dimension LESHAN RADIO COMPANY
Abstract: LBA277AT1
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277AT1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD–523 2 ANODE Device Marking LBA277AT1 = 1
|
Original
|
LBA277AT1
LBA277AT1-2/3
523/SC
LBA277AT1-3/3
sod523 dimension LESHAN RADIO COMPANY
LBA277AT1
|
PDF
|
L1SS356T1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323 2 ANODE Driver Marking L1SS356T1 = B
|
Original
|
L1SS356T1
25stics
L1SS356T1
OD-323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1 High frequency switching z Features 1 Small surface mounting type. UMD2) 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323 2 ANODE Driver Marking
|
Original
|
L1SS356T1
t1SS356T1â
OD-323
L1SS356T1â
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 DAN222 SWITCHING DIODE FEATURES: z z z z Four types of packaging are available High speed Suitable for high packing density layout High reliability 1 3 2 MARKING: N
|
Original
|
OT-523
OT-523
DAN222
100mA
|
PDF
|
BAS16V
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors SOT-563 BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 Marking: KAM Maximum Ratings @TA=25℃
|
Original
|
OT-563
OT-563
BAS16V
150mA
BAS16V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 Marking: MMBD4148T: KA2, BAS16T:A2
|
Original
|
OT-523
MMBD4148T/BAS16T
OT-523
MMBD4148T:
BAS16T
150mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes SOT-563 BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 6 5 1 4 1 2 3 Marking: KAM Maximum Ratings @Ta=25℃
|
Original
|
OT-563
OT-563
BAS16V
150mA
|
PDF
|
MARKING D3A
Abstract: Sot-23 MARKING d3a RB400D
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 RB400D Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. N, C MARKING: D3A
|
Original
|
OT-23
RB400D
MARKING D3A
Sot-23 MARKING d3a
RB400D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 DAP222 SWITCHING DIODE FEATURES: z z z High speed Suitable for high packing density layout High reliability 1 3 2 MARKING: P Maximum Ratings @Ta=25 ℃ Parameter
|
Original
|
OT-523
OT-523
DAP222
100mA
|
PDF
|
RB751S-40
Abstract: SOD523
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. CATHODE MARKING: 5
|
Original
|
OD-523
RB751S-40
OD-523
RB751S-40
SOD523
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS21T SWITCHING DIODE FEATURES z z z Fast Switching Speed For General Purpose Switching Applications High Conductance 1 3 2 MARKING :T3 Maximum Ratings @Ta=25℃
|
Original
|
OT-523
OT-523
BAS21T
100mA
200mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SOT-363 BAS16TW/MMBD4148TW SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 6 5 4 1 2 3 MARKING: BAS16TW KA2• MMBD4148TW KA2
|
Original
|
OT-363
OT-363
BAS16TW/MMBD4148TW
BAS16TW
MMBD4148TW
150mA
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 MARKING: D3A 3 2 Maximum Ratings @Ta=25℃
|
Original
|
OT-23
RB400D
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: KA2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
|
Original
|
OT-23
MMBD4148
OT-23
|
PDF
|
MMBD4448V
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors MMBD4448V SOT-563 SWITCHING DIODE FEATURES z Fast switching speed z High conductance 1 MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage
|
Original
|
OT-563
MMBD4448V
OT-563
100mA
150mA
MMBD4448V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Marking: D3C 2. 92¡ À0. 05
|
Original
|
OT-23-3L
OT-23-3L
RB421D
100mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors MMBD4448V SOT-563 SWITCHING DIODE FEATURES z Fast switching speed z High conductance 1 MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage
|
Original
|
OT-563
MMBD4448V
OT-563
100mA
150mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3B 2. 92¡ À0. 05
|
Original
|
OT-23-3L
OT-23-3L
RB420D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05
|
Original
|
OT-23-3L
OT-23-3L
RB400D
|
PDF
|
RB425D
Abstract: No abstract text available
Text: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L
|
Original
|
RB425D
OT-23-3L
100mA
RB425D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes MMBD4148W/BAS16W SOT-323 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
|
Original
|
OT-323
MMBD4148W/BAS16W
OT-323
150mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits 1 3 2 MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter
|
Original
|
OT-523
DA221
OT-523
|
PDF
|