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    MARKING Z.1 DIODE Search Results

    MARKING Z.1 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING Z.1 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR


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    LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking


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    LBA277T1 PDF

    sod523 dimension LESHAN RADIO COMPANY

    Abstract: LBA277AT1
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277AT1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD–523 2 ANODE Device Marking LBA277AT1 = 1


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    LBA277AT1 LBA277AT1-2/3 523/SC LBA277AT1-3/3 sod523 dimension LESHAN RADIO COMPANY LBA277AT1 PDF

    L1SS356T1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323 2 ANODE Driver Marking L1SS356T1 = B


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    L1SS356T1 25stics L1SS356T1 OD-323 PDF

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1 High frequency switching z Features 1 Small surface mounting type. UMD2) 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323 2 ANODE Driver Marking


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    L1SS356T1 t1SS356T1â OD-323 L1SS356T1â PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 DAN222 SWITCHING DIODE FEATURES: z z z z Four types of packaging are available High speed Suitable for high packing density layout High reliability 1 3 2 MARKING: N


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    OT-523 OT-523 DAN222 100mA PDF

    BAS16V

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors SOT-563 BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 Marking: KAM Maximum Ratings @TA=25℃


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    OT-563 OT-563 BAS16V 150mA BAS16V PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 Marking: MMBD4148T: KA2, BAS16T:A2


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    OT-523 MMBD4148T/BAS16T OT-523 MMBD4148T: BAS16T 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes SOT-563 BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 6 5 1 4 1 2 3 Marking: KAM Maximum Ratings @Ta=25℃


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    OT-563 OT-563 BAS16V 150mA PDF

    MARKING D3A

    Abstract: Sot-23 MARKING d3a RB400D
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 RB400D Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. N, C MARKING: D3A


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    OT-23 RB400D MARKING D3A Sot-23 MARKING d3a RB400D PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 DAP222 SWITCHING DIODE FEATURES: z z z High speed Suitable for high packing density layout High reliability 1 3 2 MARKING: P Maximum Ratings @Ta=25 ℃ Parameter


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    OT-523 OT-523 DAP222 100mA PDF

    RB751S-40

    Abstract: SOD523
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB751S-40 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. CATHODE MARKING: 5


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    OD-523 RB751S-40 OD-523 RB751S-40 SOD523 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS21T SWITCHING DIODE FEATURES z z z Fast Switching Speed For General Purpose Switching Applications High Conductance 1 3 2 MARKING :T3 Maximum Ratings @Ta=25℃


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    OT-523 OT-523 BAS21T 100mA 200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SOT-363 BAS16TW/MMBD4148TW SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 6 5 4 1 2 3 MARKING: BAS16TW KA2• MMBD4148TW KA2


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    OT-363 OT-363 BAS16TW/MMBD4148TW BAS16TW MMBD4148TW 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 MARKING: D3A 3 2 Maximum Ratings @Ta=25℃


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    OT-23 RB400D OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: KA2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃


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    OT-23 MMBD4148 OT-23 PDF

    MMBD4448V

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors MMBD4448V SOT-563 SWITCHING DIODE FEATURES z Fast switching speed z High conductance 1 MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage


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    OT-563 MMBD4448V OT-563 100mA 150mA MMBD4448V PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Marking: D3C 2. 92¡ À0. 05


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    OT-23-3L OT-23-3L RB421D 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors MMBD4448V SOT-563 SWITCHING DIODE FEATURES z Fast switching speed z High conductance 1 MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage


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    OT-563 MMBD4448V OT-563 100mA 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3B 2. 92¡ À0. 05


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    OT-23-3L OT-23-3L RB420D PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05


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    OT-23-3L OT-23-3L RB400D PDF

    RB425D

    Abstract: No abstract text available
    Text: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L


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    RB425D OT-23-3L 100mA RB425D PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes MMBD4148W/BAS16W SOT-323 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃


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    OT-323 MMBD4148W/BAS16W OT-323 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits 1 3 2 MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter


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    OT-523 DA221 OT-523 PDF