Z6 DIODE
Abstract: DIODE Z6 marking Z6 zener Z6 SOT23 SOT-23 marking 717
Text: SDZ7V5 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ7V5 Marking Package Code Z6 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1
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OT-23
KSD-2012-000
Z6 DIODE
DIODE Z6
marking Z6
zener Z6 SOT23
SOT-23 marking 717
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PDF
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Z6 DIODE
Abstract: DIODE Z6 marking Z6 ksd2047 marking Z6 SOT
Text: SDZ7V5F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ7V5F Marking Package Code Z6 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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Original
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OT-23F
KSD-2047-000
Z6 DIODE
DIODE Z6
marking Z6
ksd2047
marking Z6 SOT
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PDF
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MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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Original
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MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
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PDF
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
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PDF
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OCR Scan
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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PDF
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OCR Scan
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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PDF
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1
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Original
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350mW
BZX84C7V5
OT-23
/W200
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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BZX84C7V5
OT-23
350mW
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PDF
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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PDF
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SAW MARKING CODE SOT23
Abstract: H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
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AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
H8 SOT-23
SOT23 marking D1G
SAW MARKING CODE SOT-23
52s marking code
AZP51SG
marking Z6
AZP51
52S marking
microtek
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PDF
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SAW MARKING CODE SOT23
Abstract: SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
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AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
SAW MARKING CODE SOT-23
52S marking
52s marking code
AZP51SG
AZP52
AZP53
AZP54VG
AZP51
AZP51S
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PDF
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MG241H
Abstract: MMG15241HT1 GRM188R71H104KA93D ML200C GJM1555C1H100JB01D
Text: Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 1, 4/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
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MMG15241H
MMG15241HT1
MMG15241H
MG241H
MMG15241HT1
GRM188R71H104KA93D
ML200C
GJM1555C1H100JB01D
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PDF
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BZX 5V6
Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Text: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)
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OCR Scan
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CB-166
OT-23)
55-C11
BZX 5V6
BZX 9V1
BZX 4V7
BZX 6v8
bzx 8v2
8v2 BZX
15 BZX
BZX -2V5
bZX equivalent
BZX 2.7 v
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PDF
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
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Original
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MMG15241H
MMG15241HT1
MMG15241H
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PDF
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Untitled
Abstract: No abstract text available
Text: 74LVC2G17 DUAL SCHMITT TRIGGER BUFFER Description Pin Assignments The 74LVC2G17 is a dual Schmitt trigger buffer gate with standard push-pull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The SOT26 SOT363 are Future
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74LVC2G17
74LVC2G17
OT363
OT26/363
DS35164
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PDF
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Z15 marking diode
Abstract: z14 b marking
Text: BZX84Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Planar die construction • 300mW power dissipation rating • Ultra-small surface mount package SOT-23 Dim. A A1 b c D E E1 e
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BZX84Cx
OT-23
OT-23
300mW
J-STD-020D
2002/95/EC
May-2009,
KSJR06
Z15 marking diode
z14 b marking
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PDF
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smd transistor marking z3
Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1805
MRF18060AR3
MRF18060ALSR3
smd transistor marking z3
SMD Transistor z6
smd transistor z4
marking Z6 Capacitance
smd transistor marking z1
Transistor z1
SMD marking Z4
transistor SMD Z2
SMD TRANSISTOR MARKING Z2
transistor 6 pin SMD Z2
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PDF
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SMD Transistor z6
Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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GSM1930
MRF18060BLSR3
SMD Transistor z6
transistor SMD Z2
Transistor smd Z3
J344
smd transistor marking z3
transistor 6 pin SMD Z2
MOSFET marking Z5
transistor Z6
SMD z6
SMD TRANSISTOR MARKING Z2
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PDF
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zener y11
Abstract: zener 472
Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N
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OCR Scan
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Diodes/SOT23
zener y11
zener 472
|
PDF
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BZX84-C5V1
Abstract: No abstract text available
Text: BZX84Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Planar die construction • 300mW power dissipation rating • Ultra-small surface mount package SOT-23 Dim. A A1 b c D E E1 e
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Original
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BZX84Cx
OT-23
OT-23
300mW
J-STD-020D
2002/95/EC
Volta14
Jul-2010,
KSJR06
BZX84-C5V1
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PDF
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kz4 y6
Abstract: KY8 Y8 Y6 kz4 BZX84C2V7 ky4 diode kz4 diode ky2 y3 KZ9 Y6 BZX84C13 KY3 Y3 kz4
Text: BZX84C2V7 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 Mechanical Data • • • • • • Case: SOT-23, Molded Plastic
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BZX84C2V7
BZX84C51
350mW
OT-23
OT-23,
MIL-STD-202,
BZX84C4V3
BZX84C4V7
BZX84C5V1
kz4 y6
KY8 Y8
Y6 kz4
ky4 diode
kz4 diode
ky2 y3
KZ9 Y6
BZX84C13 KY3
Y3 kz4
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PDF
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Untitled
Abstract: No abstract text available
Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1
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OCR Scan
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OT-23
BV2109
BV3102
BV409
MMBV432L
|
PDF
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Y6 ZENER DIODE
Abstract: Y4 ZENER DIODE Y6 70 ZENER DIODE Y9 ZENER DIODE Diode Marking z3 SOT-23 zener y11 marking zener Z9 Z6 DIODE c27 zener diode datasheet ZENER C3V3
Text: BZX84C2V4 - BZX84C39 350mW Surface Mount Zener Diode Pb RoHS SOT-23 COMPLIANCE Features Planar die construction 350 mW power dissipation Zener voltages from 2.4V – 39V Ideally suited for automated assembly processes Mechanical Data
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Original
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BZX84C2V4
BZX84C39
350mW
OT-23
OT-23,
J-STD-020A
MIIL-STD-202,
Y6 ZENER DIODE
Y4 ZENER DIODE
Y6 70 ZENER DIODE
Y9 ZENER DIODE
Diode Marking z3 SOT-23
zener y11
marking zener Z9
Z6 DIODE
c27 zener diode datasheet
ZENER C3V3
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PDF
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