Code DP
Abstract: No abstract text available
Text: Packages Flat Pack package outlines 24 pins Flat Pack 500 mils Code : D Date : 21–07–92 28 pins Flat Pack (400 mils) Code : DP MATRA MHS Date : 15–04–97 1 Packages 32 pins Flat Pack (400 mils) Code : DJ 2 Date : 04–09–96 MATRA MHS
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CERDIP 28 PINS
Abstract: CODE 1P MATRA MHS code 1k CERDIP 48 PINS
Text: Packages Ceramic Dual In Line package outlines 22 pins CERDIP 300 mils Code : 1S Date : 28–04–97 24 pins CERDIP (300 mils) Code : 1Z MATRA MHS Date : 29–06–94 1 Packages 28 pins CERDIP (300 mils) Code : 1P Date : 23–04–97 28 pins CERDIP (600 mils)
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MATRA MHS
Abstract: 400mils MATRA MHS 28 pins
Text: Packages Side Braze package outlines 22 pins Side Braze 300 mils Code : CS Date : 22–11–96 24 pins Side Braze (300 mils) Code : CZ MATRA MHS Date : 14–06–94 1 Packages 28 pins Side Braze (300 mils) Code : CP Date : 14–06–94 28 pins Side Braze (600 mils)
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SMD-5962-38294
Abstract: No abstract text available
Text: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active
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SMD5962
SMD-5962-38294
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F 10 L 600
Abstract: DIL 330 65764 z1015
Text: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip
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65664
Abstract: MATRA MHS 65664a MATRA MHS HM S92A
Text: HM 65664A MATRA MHS 8 K x 8 Ultimate CMOS SRAM Description The HM 65664A is a very low power CMOS static RAM organized as 8192 × 8 bit. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at
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5664A
5664A
65664
MATRA MHS 65664a
MATRA MHS HM
S92A
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M65608
Abstract: No abstract text available
Text: M 65608 MATRA MHS 128 K x 8 Ultimate CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS brings the solution to
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Untitled
Abstract: No abstract text available
Text: L 65656 MATRA MHS 32 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a
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L65656
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P883
Abstract: HM-65664AB hm65664a 65664ab HM-65664
Text: HM 65664A 8 K 8 Very Low Power CMOS SRAM Introduction The HM 65664A is a very low power CMOS static RAM organized as 8192 x 8 bit. It is manufactured using the TEMIC high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at
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5664A
5664A
65664F
SCC9301029)
P883
HM-65664AB
hm65664a
65664ab
HM-65664
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Untitled
Abstract: No abstract text available
Text: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for
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Untitled
Abstract: No abstract text available
Text: M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 × 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for
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P883
Abstract: No abstract text available
Text: M 65656 MATRA MHS 32 K x 8 Ultimate CMOS SRAM Description The M 65656 is a very low power CMOS static RAM organized as 32768 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for
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65664
Abstract: No abstract text available
Text: L 65664 MATRA MHS 8 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. current typical value = 0.1 µA with a fast access time of
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L65664
65664
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sparclet
Abstract: bicc V110 temic iobus ASR22 2290C TMV-8E
Text: 90C701 for Advanced Communication Systems Preview - November 1995 Semiconductor 90C701 MATRA MHS TEMIC / MATRA MHS FAX-IT We Want Your Comments FAX +33 1-30 60 71 57 e-mail : c701.preview@matramhs.fr TEMIC / MATRA MHS SPARClet TM Applications Engineering provides a Fax number and an e-mail
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90C701
90C701
sparclet
bicc
V110
temic iobus
ASR22
2290C
TMV-8E
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65756
Abstract: MHS 65756 L65756
Text: L 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM 3.3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a
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65756
Abstract: No abstract text available
Text: HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip
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HM-65756
65756
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M65656
Abstract: 65656 P883
Text: M65656 32 K 8 Very Low Power CMOS SRAM Introduction The M65656 is a very low power CMOS static RAM organized as 32768 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC is the first to bring the solution
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M65656
M65656
65656F/G
SCC9301030)
65656
P883
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29C80F
Abstract: H261 P883 two-dimensional inverse discrete cosine transform
Text: 29C80F 2D Discrete Cosine Transform Circuit Introduction The 29C80F is a dedicated two-dimensional discrete cosine transform circuit. The two-dimensional forward transform FDCT or inverse transform (IDCT) is performed on fixed 8 x 8 pixel or coefficient blocks (64
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29C80F
29C80F
MQFPJ44
SCC9000
H261
P883
two-dimensional inverse discrete cosine transform
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80C51PX
Abstract: 80C51P16 MATRA MHS 80c51p32
Text: Tem ic 80C51PX MATRA MHS CMOS Piggy Back for MHS 80C51/C52/C154/C154D Introduction The MHS 80C51PX are piggy back devices for all the MHS microcontrollers 80C51, 80C52, 83C154 and 83C154D. of software can be evaluated and the optimum solution found by using real time evaluation and by reducing the
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80C51PX
80C51/C52/C154/C154D
80C51PX
80C51,
80C52,
83C154
83C154D.
80C51P
80C51P:
80C51P16
MATRA MHS 80c51p32
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Untitled
Abstract: No abstract text available
Text: Tem ic L 65656 MATRA MHS 32 K X 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 x 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a
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L65656
00D54flb
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sck p
Abstract: 80251G1
Text: T em ic TSG 80251G1 S e m i c o « it u c t o r s DC Characteristics Table 1.1. Absolute Maximum Ratings • Ambient Temperature Under Bias Commercial . industrial .
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80251G1
16/RD#
3/A11
4/A12
5/A13
6/A14
7/A15
sck p
80251G1
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Untitled
Abstract: No abstract text available
Text: Tem ic M 65608 MATRA MHS 128 K X 8 Ultimate CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS brings the solution to
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Sflbfl45b
0005blb
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Untitled
Abstract: No abstract text available
Text: Tem ic M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 x 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for
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Untitled
Abstract: No abstract text available
Text: Temic Semiconductors 8 K X 8 Very Low Power CMOS SRAM HM 65664A Introduction The HM 65664A is a very low power CMOS static RAM organized as 8192 x 8 bit. It is manufactured using the TEMIC high performance CMOS technology named super CMOS. With this process, TEMIC is the first to bring the solution
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5664A
5664A
again55
SCC9301029)
65664K
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