Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MAX 550 TRANSISTOR Search Results

    MAX 550 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MAX 550 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSP55

    Abstract: No abstract text available
    Text: MSP55 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)350m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MSP55 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: DT600-550 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550º V(BR)CBO (V) I(C) Max. (A)750 Absolute Max. Power Diss. (W)3.0k Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF DT600-550

    Untitled

    Abstract: No abstract text available
    Text: MSP55A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550ã V(BR)CBO (V)550 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)4.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MSP55A Freq30M

    Untitled

    Abstract: No abstract text available
    Text: APT5540HN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V) I(D) Max. (A)16.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)


    Original     		PDF APT5540HN

    Untitled

    Abstract: No abstract text available
    Text: APT5545HN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V) I(D) Max. (A)15.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)


    Original     		PDF APT5545HN

    Untitled

    Abstract: No abstract text available
    Text: IXTH20N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original     		PDF IXTH20N55

    Untitled

    Abstract: No abstract text available
    Text: IXTH17N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)17 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)


    Original     		PDF IXTH17N55

    Untitled

    Abstract: No abstract text available
    Text: APT5545AN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)30 I(D) Max. (A)14.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)230 Minimum Operating Temp (øC)


    Original     		PDF APT5545AN

    Untitled

    Abstract: No abstract text available
    Text: APT5540BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)30 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)


    Original     		PDF APT5540BN

    Untitled

    Abstract: No abstract text available
    Text: APT5540AN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)30 I(D) Max. (A)15.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)230 Minimum Operating Temp (øC)


    Original     		PDF APT5540AN

    Untitled

    Abstract: No abstract text available
    Text: 2SC5116 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)550 V(BR)CBO (V) I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.50


    Original     		PDF 2SC5116

    Untitled

    Abstract: No abstract text available
    Text: IXTH21N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original     		PDF IXTH21N55

    Untitled

    Abstract: No abstract text available
    Text: APT5545BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)30 I(D) Max. (A)17 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)


    Original     		PDF APT5545BN

    Untitled

    Abstract: No abstract text available
    Text: IXFH22N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)22# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ


    Original     		PDF IXFH22N55

    Untitled

    Abstract: No abstract text available
    Text: 2SC4517 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1


    Original     		PDF 2SC4517

    Untitled

    Abstract: No abstract text available
    Text: SSP4N55A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF SSP4N55A

    Untitled

    Abstract: No abstract text available
    Text: 2SC4518 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)900 I(C) Max. (A)5 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)1.8


    Original     		PDF 2SC4518

    Untitled

    Abstract: No abstract text available
    Text: 2N5099 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)800 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5099 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: SSS4N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)2.7 I(DM) Max. (A) Pulsed I(D)1.7 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)-55õ


    Original     		PDF SSS4N55

    Untitled

    Abstract: No abstract text available
    Text: SSH4N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF SSH4N55

    Untitled

    Abstract: No abstract text available
    Text: SSP4N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)4.0 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF SSP4N55

    Untitled

    Abstract: No abstract text available
    Text: 2C5099 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)550 V(BR)CBO (V)800 I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)25m


    Original     		PDF 2C5099

    Untitled

    Abstract: No abstract text available
    Text: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2


    OCR Scan     		PDF 30-15K BC146 BC146R BC146Y BO-92F O-92A

    MPS-A65

    Abstract: No abstract text available
    Text: Miniature Transistors TYPE POLA­ CASE NO. RITY H FE MAXIMUM RATINGS Pd It ^C E O mW (mA) (V) min max Ic ^C E (mA) (V) BC146 BC146R BC146Y BC146G N N N N MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 20 20 20 20 80 80 140 280 550 200 350 550 0.2 0.2 0.2


    OCR Scan     		PDF BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 MT4102 MPS-A65