BF545A
Abstract: BF545B BF545C
Text: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken
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BF545A;
BF545B;
BF545C
MSC895
BF545A)
BF545A
BF545B
BF545C
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BF545A_BF545B_BF545C
Abstract: BF545B
Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF545A;
BF545B;
BF545C
BF545A)
BF545A
BF545A_BF545B_BF545C
BF545B
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24 SOT23
Abstract: BF545 BF545B BF545A BF545C
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification
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BF545A;
BF545B;
BF545C
BF545A)
MAM036
24 SOT23
BF545
BF545B
BF545A
BF545C
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Untitled
Abstract: No abstract text available
Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF545A;
BF545B;
BF545C
BF545A)
BF545A
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FUJITSU MB8464A
Abstract: MB8464A-10-W mb8464a MBB464A 990kc MB8464A-15-W
Text: FUJITSU M I C R O E L E C T R ON I C S 23E D • 3 7 4 1 7 b 2 '0007^55 5 ■ T -4 k -2 3 > - 2 , October 1989 Edition 1.0 _ DATA S H E E T FUJITSU - MB8464A-10-W/-15-W CMOS 64K-BIT LOW POWER SRAM 8.192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION
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MB8464A-10-W/-15-W
64K-BIT
192WORDS
MB8464A
8192-word
t3-12
MB8464A-10-W
MB8464A-15-W
28-LEAD
FUJITSU MB8464A
MBB464A
990kc
MB8464A-15-W
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mb8464
Abstract: MB8464-15-W MB8464-15W MB8464-15
Text: FUJITSU MICROELECTRONICS 7fl D E I 374ci7b5 □GD33SÛ Û T Preliminary F U J IT S U MOS M em ories • M B 8 4 6 4 -1 5 -X , M B 8464-15-W , M B 8 4 6 4 -2 0 -W CMOS 65,536-Bit Static Random Access Memory with Data Retention Mode D e a c rip tio n The Fujitsu MB&464-X/W Is a 8,192 word by 8-bit static random
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GD33SÛ
464-15-W
536-Bit
464-X/W
MB8464-15X/W)
MB8464-20W)
00033kl7
mb8464
MB8464-15-W
MB8464-15W
MB8464-15
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apx transistor
Abstract: No abstract text available
Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A
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bbS3T31
00Z353T
BF545A;
BF545B;
BF545C
BF545A
BF545B
apx transistor
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Untitled
Abstract: No abstract text available
Text: F U JI TS U M I C R O E L E C T R O N I C S 47E D • 3 7 4 T 7 b E O O IT D? ! 2 ■ f h i January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation
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January1990
MB8464A-10-X/-10LL-X/-15-X/-15LL-X
64K-BIT
MB8464A-X
appl/-10LL-X
MB8464A-15-X/-15LL-X_
32-PAD
LCC-32C-A02)
C32011Ã
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8464a
Abstract: MBB464A 8464A-10 MB6464 3170L mb8464a
Text: F UJITSU M I C R O E L E C T R ON I C S 7fl D E | 374T7t,2 □□□33ÖQ 1 3749762 FUJITSU MICROELECTRONICS 7ÖC 033ÖÜ u _-i T-46-23- Preliminary F U J IT S U M OS M em o rie s • M B 8464A -10-W , M B 8464A -15-W CM OS 65,536-Bit Static Random Access Memory
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374T7t
T-46-23-
-10-W
-15-W
536-Bit
MB8464A-W
192-word
u0033flY
28-Lead
8464a
MBB464A
8464A-10
MB6464
3170L
mb8464a
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