PMF400UN
Abstract: No abstract text available
Text: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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PMF400UN
M3D102
OT323
SC-70)
PMF400UN
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PMF370XN
Abstract: SOT323 FET N M 087
Text: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMF370XN
M3D102
OT323
SC-70)
PMF370XN
SOT323 FET N
M 087
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smd diode marking a6
Abstract: BAS16W smd diode code a6 marking code a6 smd diode marking code a6
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 12 Philips Semiconductors Product specification High-speed diode BAS16W
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M3D102
BAS16W
BAS16W
OT323
smd diode marking a6
smd diode code a6
marking code a6
smd diode marking code a6
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"MARKING CODE A1"
Abstract: BAW56W
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode
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M3D102
BAW56W
BAW56W
OT323
"MARKING CODE A1"
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SMD diode 6.8y
Abstract: smd code marking 18Y 51y diode BZV49 SOT89 smd marking 13 marking code 47y 43Y smd code BZV49-C12 BZV49-C75 BZV49-C2V7
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes
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M3D109
BZV49
SMD diode 6.8y
smd code marking 18Y
51y diode
SOT89 smd marking 13
marking code 47y
43Y smd code
BZV49-C12
BZV49-C75
BZV49-C2V7
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR BFT92 m1b marking marking code 10 sot23 BFT92W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES
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BFT92W
OT323
BFT92W
BFT92.
MBC870
SCD31
123065/1500/01/pp12
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
BFT92
m1b marking
marking code 10 sot23
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smd diode code A4
Abstract: DIODE smd marking A4 smd diode A4 BAV70W
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAV70W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed double diode BAV70W
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M3D102
BAV70W
BAV70W
OT323
smd diode code A4
DIODE smd marking A4
smd diode A4
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MRC002
Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS540 PINNING • High power gain
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BFS540
OT323
MBC870
OT323
OT323.
MRC002
MRC005
MRC008
BFS540
MRC003
philips bfs540
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MRC026
Abstract: MRC025 MRC027 BFS520 mrc024 MRC021
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS520 • High transition frequency It is intended for wideband applications such as satellite TV
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BFS520
OT323
OT323
MBC870
R77/03/pp13
MRC026
MRC025
MRC027
BFS520
mrc024
MRC021
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1PS302
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D187 1PS302 High-speed double diode Product specification Supersedes data of 1996 Sep 03 File under Discrete Semiconductors, SC01 1996 Oct 04 Philips Semiconductors Product specification High-speed double diode
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M3D187
1PS302
1PS302
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1PS301
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 1PS301 High-speed double diode Product specification Supersedes data of 1996 Sep 03 File under Discrete Semiconductors, SC01 1996 Oct 04 Philips Semiconductors Product specification High-speed double diode
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M3D187
1PS301
1PS301
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1PS70SB82
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier double diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes
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M3D102
1PS70SB82;
1PS70SB84;
1PS70SB85;
1PS70SB86
1PS70SB82
1PS70SB82
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BFS540
Abstract: MRC005
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION
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M3D102
BFS540
OT323
MBC870
613516/04/pp12
BFS540
MRC005
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MB88121B
Abstract: MB88121 mbc107 mbc107 transistor ND-19 SPP0110 032-G TIBC 0714H ccfl driver schematic fujitsu
Text: FUJITSU SEMICONDUCTOR ASSP MANUAL AM15-11201-1E FlexRay ASSP MB88121B User’s Manual FlexRay ASSP MB88121B User’s Manual FUJITSU LIMITED PREFACE • Purpose of this document Thank you for reading about this Fujitsu semiconductor device. The MB88121B is a controller that performs FlexRay communications in accordance with the FlexRay
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AM15-11201-1E
MB88121B
MB88121B
MB88121B,
MB88121B.
MB88121
mbc107
mbc107 transistor
ND-19
SPP0110
032-G
TIBC
0714H
ccfl driver schematic fujitsu
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Untitled
Abstract: No abstract text available
Text: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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PMF280UN
M3D102
OT323
SC-70)
MBC870
771-PMF280UN115
PMF280UN
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BAS16W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS16W
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M3D102
BAS16W
BAS16W
OT323
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The
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BFT92W
OT323
BFT92W
BFT92.
MBC870
OT323.
R77/01/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns
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BFS505
OT323
MBC870
OT323.
OT323
R77/03/pp14
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION • High power gain
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M3D102
BFS540
OT323
MBC870
R77/04/pp13
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Untitled
Abstract: No abstract text available
Text: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.
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BSH121
BSH121
OT323.
OT323,
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Philips FA 261
Abstract: No abstract text available
Text: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •
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BFS505
OT323
MBC87I0
OT323.
OT323
Philips FA 261
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier double diodes FEATURES BAS70W series PINNING • Low forward voltage BAS70 PIN • High breakdown voltage • Guard ring protected • Very small S M D package • Low capacitance. W -04W -05W
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BAS70W
BAS70
BAS70W)
BAS70-04W;
MBC870
OT323)
OT323
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stb 1277 TRANSISTOR equivalent
Abstract: MSC 1691 transistor 1201 1203 1205 B3c1 RF NPN POWER TRANSISTOR C 10-12 GHZ BFS505 FC 0137 transistor Bf 966 msc 1697 transistor bf 979
Text: Philips Sem iconductors b L S B IB l N A tlE R 0 0 B 5 2 clL i T tiT IH A P X P H IL IP S /D IS C R E T E Product specification b?E D NPN 9 GHz wideband transistor BFS505 PIN CONFIGURATION PINNING FEATURES PIN DESCRIPTION • Low current consumption • High power gain
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BFS505
OT323
MBC670
OT323.
stb 1277 TRANSISTOR equivalent
MSC 1691
transistor 1201 1203 1205
B3c1
RF NPN POWER TRANSISTOR C 10-12 GHZ
BFS505
FC 0137
transistor Bf 966
msc 1697
transistor bf 979
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic
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BFS17W
OT323
BFS17W
BFS17.
MBC870
711062b
711Dfl5b
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