MBK10
Abstract: No abstract text available
Text: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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Original
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PSMN015-100P/100B
OT404
771-PSMN015-100P
PSMN015-100P
MBK10
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PDF
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PHD45N03LTA
Abstract: PHB45N03LTA PHP45N03LTA a2240
Text: PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP45N03LTA in SOT78 TO-220AB
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Original
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PHP/PHB/PHD45N03LTA
PHP45N03LTA
O-220AB)
PHB45N03LTA
OT404
PHD45N03LTA
OT428
OT404,
OT428
a2240
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PDF
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transistor BR 471 A
Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Text: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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Original
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PHP95N03LT;
PHB95N03LT;
PHE95N03LT
PHP95N03LT
O-220AB)
PHB95N03LT
OT404
PHE95N03LT
OT226
OT404,
transistor BR 471 A
74 series PHILIPS
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PDF
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PHB153NQ08LT
Abstract: PHP153NQ08LT
Text: PHP/PHB153NQ08LT N-channel TrenchMOS logic level FET Rev. 01 — 31 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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Original
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PHP/PHB153NQ08LT
O-220AB)
OT404
PHB153NQ08LT
PHP153NQ08LT
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PDF
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PHB145NQ06T
Abstract: No abstract text available
Text: PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold
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Original
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PHB145NQ06T
OT404
PHB145NQ06T
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PDF
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13164
Abstract: PHB129NQ04LT PHP129NQ04LT
Text: PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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Original
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PHP/PHB129NQ04LT
O-220AB)
OT404
13164
PHB129NQ04LT
PHP129NQ04LT
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PDF
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PSMN015-100B
Abstract: PSMN015-100P
Text: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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Original
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PSMN015-100P/100B
OT404
PSMN015-100B
PSMN015-100P
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PDF
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Untitled
Abstract: No abstract text available
Text: PHP73N06T; PHB73N06T TrenchMOS standard level FET Rev. 02 — 5 July 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP73N06T in SOT78 TO-220AB
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Original
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PHP73N06T;
PHB73N06T
PHP73N06T
O-220AB)
PHB73N06T
OT404
OT404,
MBB076
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK75150-55A;
BUK76150-55A
BUK75150-55A
O-220AB)
BUK76150-55A
OT404
OT404,
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PDF
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PHP71NQ03LT
Abstract: PHB71NQ03LT PHD71NQ03LT
Text: PHP/PHB/PHD71NQ03LT TrenchMOS logic level FET Rev. 01 — 25 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP71NQ03LT in SOT78 TO-220AB
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Original
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PHP/PHB/PHD71NQ03LT
PHP71NQ03LT
O-220AB)
PHB71NQ03LT
OT404
PHD71NQ03LT
OT428
OT404,
OT428
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PDF
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Untitled
Abstract: No abstract text available
Text: PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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Original
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PHP32N06LT;
PHB32N06LT
PHP32N06LT
O220AB)
PHB32N06LT
OT404
O-220AB)
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK7511-55A; BUK7611-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK7511-55A;
BUK7611-55A
BUK7511-55A
O-220AB)
BUK7611-55A
OT404
OT404,
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PDF
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BUK9540-100A
Abstract: BUK9640-100A
Text: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:
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Original
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BUK95/9640-100A
BUK9540-100A
O-220AB)
BUK9640-100A
OT404
OT404,
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PDF
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BUK7623-75A
Abstract: No abstract text available
Text: BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK7523-75A;
BUK7623-75A
BUK7523-75A
O-220AB)
BUK7623-75A
OT404
OT404,
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PDF
|
|
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PSMN004-60B
Abstract: PSMN004-60P
Text: PSMN004-60P/60B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN004-60P in SOT78 TO-220AB
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Original
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PSMN004-60P/60B
PSMN004-60P
O-220AB)
PSMN004-60B
OT404
OT404,
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PDF
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BUK9560-100A
Abstract: BUK9660-100A BUK956
Text: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK9560-100A;
BUK9660-100A
BUK9560-100A
O-220AB)
BUK9660-100A
OT404
OT404,
BUK956
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PDF
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K 3264 fet transistor
Abstract: BUK7608-55A 03NH45 BUK7508-55A VA140
Text: BUK7508-55A; BUK7608-55A TrenchMOS standard level FET Rev. 02 — 17 January 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK7508-55A;
BUK7608-55A
BUK7508-55A
O-220AB)
BUK7608-55A
OT404
OT404,
K 3264 fet transistor
03NH45
VA140
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PDF
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OC202
Abstract: BUK7520-100A BUK7620-100A
Text: BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 — 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK7520-100A;
BUK7620-100A
BUK7520-100A
O-220AB)
BUK7620-100A
OT404
OT404,
OC202
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PDF
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BUK9520-100A
Abstract: BUK9620-100A
Text: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK9520-100A;
BUK9620-100A
BUK9520-100A
O-220AB)
BUK9620-100A
OT404
OT404,
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PDF
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BUK9535-100A
Abstract: BUK9635-100A
Text: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK9535-100A;
BUK9635-100A
BUK9535-100A
O-220AB)
BUK9635-100A
OT404
OT404,
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PDF
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BUK7535-55A
Abstract: No abstract text available
Text: BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK7535-55A;
BUK7635-55A
BUK7535-55A
O-220AB)
BUK7635-55A
OT404
OT404,
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK9523-75A;
BUK9623-75A
BUK9523-75A
O-220AB)
BUK9623-75A
OT404
OT404,
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PDF
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PHB29N08T
Abstract: PHP29N08T
Text: PHP/PHB29N08T TrenchMOS standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 TO-220AB
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Original
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PHP/PHB29N08T
PHP29N08T
O-220AB)
PHB29N08T
OT404
OT404
MBB076
MBK116
MBK106
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PDF
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D 795 A
Abstract: No abstract text available
Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low
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Original
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BUK95/96/9E06-55B
BUK9506-55B
O-220AB)
BUK9606-55B
OT404
BUK9E06-55B
OT226
D 795 A
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PDF
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