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    MBM20 Price and Stock

    ASSMANN WSW components GmbH A-USB30AM-30MBM-200

    CABLE A PLUG TO MCR B PLUG 6.56'
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    DigiKey A-USB30AM-30MBM-200 Bag 70 1
    • 1 $12.85
    • 10 $9.873
    • 100 $7.6969
    • 1000 $6.12657
    • 10000 $6.12657
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    Red Lion Controls MBM20000

    BOTTOM MOUNT BRACKET KIT
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    DigiKey MBM20000 Box
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    AmericaFA Inc SFDL-MB-M20

    INTERLOCK SOLENOID RELEASE 4PST
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    DigiKey SFDL-MB-M20 Bulk 1
    • 1 $140
    • 10 $140
    • 100 $140
    • 1000 $140
    • 10000 $140
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    Hitachi Ltd MBM200GS12A

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    Bristol Electronics MBM200GS12A 1
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    Autonics Corporation SFDL-MB-M20K

    Safety switch: bolting; SFDL; 2NC + 1NC/1NO; IP67; polyamide 66
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SFDL-MB-M20K 1
    • 1 $113.12
    • 10 $98.98
    • 100 $98.98
    • 1000 $98.98
    • 10000 $98.98
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    Find more MBM20 price and stock on Findchips.com

    MBM20 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBM20000 Red Lion Controls Accessories, Sensors, Transducers, BOTTOM MOUNT BRACKET KIT Original PDF
    MBM200A6 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    MBM200A6 Hitachi Semiconductor IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES Scan PDF
    MBM200A6 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200A6 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200A6 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MBM200AS6 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200BS6 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200BS6 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200GR12A Hitachi Semiconductor TRANS IGBT MODULE N-CH 1200V 200A Original PDF
    MBM200GR6 Hitachi Semiconductor TRANS IGBT MODULE N-CH 600V 200A Original PDF
    MBM200GS12 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200GS12 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200GS12 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MBM200GS6AW Hitachi Semiconductor TRANS IGBT MODULE N-CH 600V 200A Original PDF
    MBM2011A Motorola 1M x 1-Bit Magnetic Bubble Memory Device Original PDF

    MBM20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBM200GR12

    Abstract: IGBT-SP-99024 Hitachi DSA00110
    Text: Spec. No. IGBT-SP-99024 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99024 MBM200GR12 00A/1200V, MBM200GR12 Hitachi DSA00110

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200JS12AW

    MBM200GR12A

    Abstract: IGBT 200A 600V 600V 200A TR 1250W
    Text: PDJ-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [定格 200A/1200V, 2in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用


    Original     		PDF PDJ-M200GR12A-0 MBM200GR12A 00A/1200V, TC125 MBM200GR12A IGBT 200A 600V 600V 200A TR 1250W

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 17 25 35 46 * High speed and low saturation voltage. 94 80 16 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200GS12AW

    MBM200GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A Hitachi DSA0047

    MBM200GR12A

    Abstract: No abstract text available
    Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDF PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A

    MBM200JS12EW

    Abstract: e2 diode Hitachi DSA00110
    Text: IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING FEAT RES EATURES 4-φ6.5 * High speed and low saturation voltage. 108 93 20 20 4-Fast-on Terminal #110 20 Unit in mm 3-M6 C2E1 * low noise due to built-in free-wheeling G2 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200JS12EW MBM200JS12EW e2 diode Hitachi DSA00110

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 FEAT EATURES RES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 12 17 25 35 * High speed and low saturation voltage. 80 16 * low noise due to built-in free-wheeling E1


    Original     		PDF MBM200GS6AW

    MBM200GR6

    Abstract: Hitachi DSA0047
    Text: Spec. No.IGBT-SP-99020 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR6 [Rated 200A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.


    Original     		PDF IGBT-SP-99020 MBM200GR6 00A/600V, MBM200GR6 Hitachi DSA0047

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 108 93 20 20 4-Fast-on Terminal #110 20 Unit in mm 3-M6 C2E1 * low noise due to built-in free-wheeling G2 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200JS12EW

    MBM200JS12AW

    Abstract: e2 diode Hitachi DSA00110
    Text: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200JS12AW MBM200JS12AW e2 diode Hitachi DSA00110

    MBM200GS12AW

    Abstract: mbm200gs12a C2E1 Hitachi DSA00110
    Text: IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 17 25 35 46 * High speed and low saturation voltage. 94 80 16 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .


    Original     		PDF MBM200GS12AW MBM200GS12AW mbm200gs12a C2E1 Hitachi DSA00110

    MBM200GS6AW

    Abstract: Hitachi DSA00110
    Text: IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 FEAT RES EATURES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 12 17 25 35 * High speed and low saturation voltage. 80 16 * low noise due to built-in free-wheeling E1


    Original     		PDF MBM200GS6AW MBM200GS6AW Hitachi DSA00110

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  Isolated heat sink terminal to base .


    Original     		PDF IGBT-SP-12010 MBM200H45E2-H

    C2E1

    Abstract: N5108 MBM300GS12AW MBN600GS12AW MBM400GR6 mbn1200gr12a 4862G G3E3 Hitachi DSA002734 MBN1200D33A
    Text: Date:Mar.2002 Status List M:Mass production KS02007 A:Abolition GR - A Series Advanced GR Series Absolute Maximum Ratings Connection Single Type Characteristics Outline Status 0.4 N-7 M 1.2 0.35 N-6 M 0.7 1.1 0.3 N-5 M 2.2 0.7 1.1 0.3 M- 9 M 1,250 2.2 0.6


    Original     		PDF MBN1200GR12A MBN600GR12A MBN400GR12A MBM300GR12A MBM200GR12A MBM150GR12A MBM100GR12A KS02007 MBM400GR6 MBM300GR6 C2E1 N5108 MBM300GS12AW MBN600GS12AW 4862G G3E3 Hitachi DSA002734 MBN1200D33A

    MC34047

    Abstract: MC34046
    Text: SC42584 SC42585 MOTOROLA A d v a n c e Information GENERAL DESCRIPTION The SC42584 and SC42585 Bubble M em ory controllers are m onolithic HMOS integrated circuits which control the operation of the Motorola MBM2256 256 Kilobit and MBM2011 <1 Megabit) Magnetic Bubble Memories, respectively. They provide the inter­


    OCR Scan     		PDF SC42584 SC42585 SC42585 MBM2256 MBM2011 40-pin MC34047 MC34046

    motorola bubble memory controller

    Abstract: MC34047 MC34046 MBM2256 memory bubble L100 MC34044 SC42468 SC42584 SC42585
    Text: SC42584 SC42585 MOTOROLA A d v a n c e Information GENERAL DESCRIPTION The SC42584 and SC42585 Bubble M e m o ry c o n tro lle rs are m o n o lith ic HM OS in te g ra te d circ u its w h ic h c o n tro l the o pe ra tio n o f th e M o to ro la M B M 2 25 6 256 K ilo b it and MBM 2011 <1 M egabit)


    OCR Scan     		PDF SC42584 SC42585 MBM2256 MBM2011 40-pin SC42584* SC42585 motorola bubble memory controller MC34047 MC34046 MBM2256 memory bubble L100 MC34044 SC42468

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    IGBT MBN 1200

    Abstract: 1200a6 IGBT MBN 400 A6 MBN300A6 MBM200A6 H-17 MBM100A6 MBM150A6 MBM75A6 MBN200F12
    Text: - 224 - O U h ÿ 's - J X Ï = M & - ? 'j jv . * - G BT K r t ia = X h tj T O i ^ M r - x â i i ^ l è l ^ è n r i - '- S h g i -2 E o r t i v z C O l ^ ; O E 1o G B ) £ 1. Bz g V"cES V GES A î§ I c CP (T e F (1ms) (V ) (V ) (A ) (A ) Í FM I (1ms)


    OCR Scan     		PDF H-101 IGBT MBN 1200 1200a6 IGBT MBN 400 A6 MBN300A6 MBM200A6 H-17 MBM100A6 MBM150A6 MBM75A6 MBN200F12

    MIL-883B

    Abstract: No abstract text available
    Text: gl MOTOROLA A d v a n c e Inform ation GENERAL DESCRIPTION 1 M X 1 BIT MAGNETIC BUBBLE MEMORY DEVICE The M B M 2011A is a 1,048,576 (2^0 b it m a gn e tic b u b b le m e m ­ o ry device. A ll re q u ire d m a g n e tic co m p o n e n ts, in clu d in g p e r­


    OCR Scan     		PDF MBM2011A 16-pin l883B, IL-883B, MIL-883B, MIL-STD-883B, MIL-883B

    MBM300GS12A

    Abstract: MBN1200C33 MBM200BS6 MBM100AS6 MBM300gs6a mbm200gs12a mbm200js12a MBM150BS6 MBB100AS6 MBM300BS6
    Text: IGBTESä-Jb IGBT Modules • £ï • m m H ß is w w E & t t x ' i v r y y * • @ S £ V y h U t i l t u - * - < * - F U S F D J g « | c <£ D , « y - r x • « » lif â Ê ( ï ü ? t : - ■Features #High speed and low saturation voltage #Low noise due to built-in free-wheeling USFD


    OCR Scan     		PDF MBN400C20 MBN600C20 MBN400C33 MBN600C33 MBN1200C33 MBM300GS12A MBN1200C33 MBM200BS6 MBM100AS6 MBM300gs6a mbm200gs12a mbm200js12a MBM150BS6 MBB100AS6 MBM300BS6

    MBN300A6

    Abstract: 25 KW inverter 150 KW motor 12 to 220 inverter 110 KW motor .37 KW motor IGBT inverter Hitachi INVERTER 50 kW GN6030C MBM300A6
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E MBN300A6 25 KW inverter 150 KW motor 12 to 220 inverter 110 KW motor .37 KW motor IGBT inverter Hitachi INVERTER 50 kW MBM300A6

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    MBB100A6

    Abstract: MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6
    Text: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes • High speed . small recovery time, tr • Low loss . small reverse-peak current, Irp • Low noise . small rate of charge of recovery current, di/dt In order to maintain switching losses to minimal,


    OCR Scan     		PDF MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 MBB100A6 MBB50A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6