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    MBR20040CTR Search Results

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    MBR20040CTR Price and Stock

    GeneSic Semiconductor Inc MBR20040CTR

    DIODE MOD SCHOTT 40V 200A 2TOWER
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    DigiKey MBR20040CTR Bulk 80
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    NAC MBR20040CTR 25
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    Navitas Semiconductor MBR20040CTR

    Diode Modules 40V 200A Schottky Recovery
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    Mouser Electronics MBR20040CTR
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    Onlinecomponents.com MBR20040CTR
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    MBR20040CTR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR20040CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR20040CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 200A 2TOWER Original PDF
    MBR20040CTR America Semiconductor MBR20040 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MBR20040CTR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    MBR20020CT MBR20040CTR MBR20030CT MBR20035CT MBR20040CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT 175se PDF

    MBR20020CT

    Abstract: MBR20030CT MBR20035CT MBR20040CT
    Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20030CT MBR20035CT MBR20040CT PDF

    MBR20020CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original
    MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT PDF