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onsemi MBR2030CTLG DIODE ARRAY SCHOT 30V 10A TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR2030CTLG	Tube	170		1	1 $3.26 10 $3.26 100 $3.26 1000 $3.26 10000 $3.26	Buy Now
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Bristol Electronics	MBR2030CTLG		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
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Rochester Electronics	MBR2030CTLG		130		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now
Richardson RFPD	MBR2030CTLG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Flip Electronics	MBR2030CTLG		12,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MBR2030CTL DIODE ARRAY SCHOT 30V 10A TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR2030CTL	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MBR2030CTL		50		1	1 $0.7908 10 $0.7908 100 $0.7434 1000 $0.6722 10000 $0.6722	Buy Now
Motorola Semiconductor Products MBR2030CTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MBR2030CTL		3,455			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MBR2030CTL Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
MBR2030CTL	On Semiconductor	SWITCHMODE Dual Schottky Power Rectifier	Original	PDF
MBR2030CTL	On Semiconductor	20A 30V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50	Original	PDF
MBR2030CTL	Microsemi	Schottky Rectifier	Scan	PDF
MBR2030CTL-D	On Semiconductor	SWITCHMODE Dual Schottky Power Rectifier	Original	PDF
MBR2030CTLG	On Semiconductor	20A 30V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50	Original	PDF
MBR2030CTLG	On Semiconductor	20A 30V Schottky Rectifier	Original	PDF

MBR2030CTL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MBR2030CTL Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)20	Original	MBR2030CTL Current10 Voltage30 Voltage580m Current40 StyleTO-220AB	PDF
B2030 Abstract: B-2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	MBR2030CTL 2N2222 2N6277 1N5817 B2030 B-2030	PDF
b2030l Abstract: MBR2030CTLG b2030lg SCHOTTKY BARRIER RECTIFIER aka B2030 MBR2030CTL Text: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability	Original	MBR2030CTL MBR2030CTL/D b2030l MBR2030CTLG b2030lg SCHOTTKY BARRIER RECTIFIER aka B2030 MBR2030CTL	PDF
B2030L Abstract: B2030LG MBR2030CTLG MBR2030CTL SCHOTTKY BARRIER RECTIFIER aka Text: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability	Original	MBR2030CTL B2030L B2030LG MBR2030CTLG MBR2030CTL SCHOTTKY BARRIER RECTIFIER aka	PDF
2N2222 Abstract: 2N6277 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	MBR2030CTL r14525 MBR2030CTL/D 2N2222 2N6277	PDF
B2030L Abstract: No abstract text available Text: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability	Original	MBR2030CTL MBR2030CTL/D B2030L	PDF
MBR2030CTLG Abstract: No abstract text available Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	MBR2030CTL MBR2030CTL 2N2222 2N6277 1N5817 MBR2030CTLG	PDF
MBR2030CTLG Abstract: 2N2222 B2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	MBR2030CTL MBR2030CTL MBR2030CTL/D MBR2030CTLG 2N2222 B2030	PDF
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS MBR2015CTL-MBR2030CTL 20A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating MBR Symbol 2015CTL 2030CTL 15 30 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current	Original	MBR2015CTL-MBR2030CTL 2015CTL 2030CTL MIL-PRF-19500,	PDF
B2030 Abstract: 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030 Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.	Original	MBR2030CTL r14525 MBR2030CTL/D B2030 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030	PDF
MBR2030CTLG Abstract: No abstract text available Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	MBR2030CTL MBR2030CTL MBR2030CTL/D MBR2030CTLG	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
SMD Transistors w04 sot-23 Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.	Original	represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF

MBRM110LT1 Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360 Text: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3	Original	1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 MBRM110LT1 MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360	PDF
418B-04 Abstract: MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460 Text: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers Device IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) 0.5 1 1 2 1 4 8 10 20 25 25 25 25 30 40 200 400 400 600 20 20 10 10 30 10 35 35 30 35 35	Original	MBR0520LT1, MBR120LSFT1, MBRM110LT1, MBRA210LT3 MBRS130LT3 MBRS410LT3 MBRD835L MBRD1035CTL MBR2030CTL MBRB2535CTL 418B-04 MUR3020PT 1n5822 trr MR760RL SS16 SMB MBR2 mur460	PDF
mur860 diode Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821	Original	1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA	PDF
mps2112 Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular	Original	SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp	PDF
transistor marking code 12W SOT-23 Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp	PDF
LT1047 Abstract: COILTRONICS LT1074 LT1074CY LT1074 LT1074/LT1076 equivalent de LT1074 LT1074HVCY LT1074HVMK LT1074 24v LT1076 Text: LT1074/LT1076 Step-Down Switching Regulator tions allow this device to be used as a positive-to-negative converter, a negative boost converter, and as a flyback converter. The switch output is specified to swing 40V below ground, allowing the LT1074 to drive a tappedinductor in the buck mode with output currents up to 10A.	Original	LT1074/LT1076 LT1074 LT1074) 100kHz LT1047 COILTRONICS LT1074 LT1074CY LT1074/LT1076 equivalent de LT1074 LT1074HVCY LT1074HVMK LT1074 24v LT1076	PDF
MBR2015CTL Abstract: B2015 Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA MBR2015CTL MBR2030CTL SWITCHMODE Dual Schottky Power Rectifiers MBR203QCTL is a Motorola Preferred Device . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal	OCR Scan	MBR2015CTL MBR2030CTL MBR203QCTL B2015	PDF
BR2030C Abstract: MBR2015CTL B2015 tl 2n2222 Text: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with	OCR Scan	MBR2015CTL/D BR2030C MBR2015CTL B2015 tl 2n2222	PDF
30LT30CT Abstract: 32CTQ030 FST3230 MBR2030CTL Text: FST3230 30 Amp Schottky Rectifier Dim. Inches Minimum .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P R M M illim eter Maximum Minimum -.500 .190 .014 .080 .015 .045 .090 .415 .055 .190 .260 .650 .161 .135 .250 .580 .210 .022 .115 .040 .070	OCR Scan	O-220AB FST3230 30LT30CT 32CTQ030 MBR2030CTL 32CTQ030 MBR2030CTL	PDF
IRL3103 Abstract: No abstract text available Text: FA IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R RC5031 Adjustable Switching Regulator Description • High power switched-mode DC-DC controller can source in excess of 13 A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency • Cumulative accuracy <3% over line, load, temperature	OCR Scan	RC5031 RC5031 IRL3103	PDF

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onsemi MBR2030CTLG

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Motorola Semiconductor Products MBR2030CTL

MBR2030CTL Datasheets (6)

MBR2030CTL Datasheets Context Search

Untitled

B2030

b2030l

B2030L

2N2222

B2030L

MBR2030CTLG

MBR2030CTLG

Untitled

B2030

MBR2030CTLG

MC68B21CP

SMD Transistors w04 sot-23

transistor mosfet buv18a

MBRM110LT1

418B-04

mur860 diode

mps2112

transistor marking code 12W SOT-23

LT1047

MBR2015CTL

BR2030C

30LT30CT

IRL3103