MBR25 Search Results

mbr2506

Abstract: MBR25060V
Contextual Info: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

Contextual Info: MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60A Forward Current 30A ITO-220AB MBRF25xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

2550CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: DIGITRON SEMICONDUCTORS MBR2535CTL 25A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR2535CTL Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 35 30 30 V Average rectified forward current Rated VR IF(AV)

Contextual Info: MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection OVP

B2515L

Abstract: MBR2515L
Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

Contextual Info: MCC MBR2520CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU MBR2560CT Features • • • • • 25 Amp Schottky Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection

MBR25H35CT

Contextual Info: New Product MBR F,B 25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR25HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF25HxxCT

MBR25H35CT

Contextual Info: MBR25HxxCT, MBRF25HxxCT & MBRB25HxxCT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 35 to 60 V Forward Current 30 A ITO-220AB MBRF25HxxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

MBR2505

Abstract: MBR251 MBR252 MBR254
Contextual Info: MBR2505 THRU MBR2510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation

322 smd code

Abstract: MBR2535CT MBR2535CT-1 MBR2545CT MBR2545CT-1 MBRB2535CT MBRB2545CT SMD-220 93446 MBRB25
Contextual Info: Bulletin PD-2.322 rev. E 01/07 MBR25.CT MBRB25.CT MBR25.CT-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30Amp VR = 35 - 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 30 A 30 A 35 - 45 V IFSM @ tp = 5 s sine 1060 A VF

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: MBR2520 MBR2545 MBR2560 MBR2540 MBR2580
Contextual Info: MBR2520 thru MBR2580 25 Amp HT Power Schottky Barrier Rectifier 20 Volts to 80 Volts Features • High Junction Temperature Capability • Low Leakage Current and Low Forward Voltage Drop • Low Power Loss and High Efficiency Maximum Ratings • Operating Junction Temperature: 150°C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-220F Plastic-Encapsulate Diodes MBR2545FCT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss, High Efficiency z High Surge Capability

Contextual Info: MBR2535CT THRU MBR2560CT SCHOTTKY RECTIFIER Reverse Voltage 35 to 60 Volts Forward Current - 30.0 Amperes - FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap

2535CT

Abstract: 2545CT MBR2535CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT Features • • • • • • 0.185 4.70 0.175(4.44) 0.412(10.5) MAX 0.055(1.40) 0.045(1.14) 0.154(3.91) 0.148(3.74) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity

MBR2515L

Abstract: MBR2515LG B2515L diode B2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

MBR2535CT

Abstract: MBR2545CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection TO-220AB Low Power Loss, High Efficiency L High Surge Capability B Min Max A 14.48 15.75 B 10.00 10.40

MBR25200FCT

Abstract: MBR25200
Contextual Info: MBR2540FCT~MBR25200FCT SCHOTTKY BARRIER RECTIFIERS 40 to 200 Volts VOLTAGE 25 Amperes CURRENT FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228

2535CT

Abstract: 2545CT MBR2535CT MBR2560CT
Contextual Info: E M IC O N D U C T O R 1 MBR2535CT - MBR2560CT 0 .055 1.40 0 .045 (1.14 ) Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier

Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCH MODE Power R ectifier . . . em p lo ying the S cho ttky B arrier princip le in a large m e ta l-to -s ilic o n pow er diod e. S ta te - o f- th e - a r t ge o m e try fe a tu re s e p ita xia l co n stru ctio n w ith oxide

MBR 2535 package

Abstract: MBR2560
Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

MBR2545CT/45

Abstract: MBR2535CT MBR2545CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • G uard Ring D ie Construction for T ran sien t Protection • Low P ow er Loss, High Efficiency • High S urge Capability Lh -*| • High C urrent C apability and Low Forward

Contextual Info: BL GALAXY ELECTRICAL MBR2535CT - MBR2560CT VOLTAGE RANGE: 35 - 60 V CURRENT: 25 A DUAL SCHOTTKY RECTIFIERS FEATURES High s urge capacity. TO-220AB For us e in low voltage, high frequency inverters , free 111 wheeling, and polarity protection applications .