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    MBR60035CT Price and Stock

    GeneSic Semiconductor Inc MBR60035CT

    DIODE MOD SCHOTT 35V 300A 2TOWER
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    Mouser Electronics MBR60035CT
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    NAC MBR60035CT 25
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    GeneSic Semiconductor Inc MBR60035CTL

    DIODE MOD SCHOTT 35V 300A 2TOWER
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    GeneSic Semiconductor Inc MBR60035CTR

    DIODE MOD SCHOTT 35V 300A 2TOWER
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    Mouser Electronics MBR60035CTR
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    NAC MBR60035CTR 25
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    GeneSic Semiconductor Inc MBR60035CTRL

    DIODE MOD SCHOTT 35V 300A 2TOWER
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    Navitas Semiconductor MBR60035CT

    Silicon Rectifier Module - Schottky (Std Config) - 35V - 600A - Twin Tower
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    Onlinecomponents.com MBR60035CT
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    Find more MBR60035CT price and stock on Findchips.com

    MBR60035CT Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR60035CT America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Original PDF
    MBR60035CT GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 35V 600A 2TOWER Original PDF
    MBR60035CT Micro Commercial Components 600 Amp Schottky Barrier Rectifier 35 Volts Original PDF
    MBR60035CT America Semiconductor MBR60035 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Scan PDF
    MBR60035CTL GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 35V 300A 2 TOWER Original PDF
    MBR60035CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Original PDF
    MBR60035CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 35V 600A 2TOWER Original PDF
    MBR60035CT(R) Transys Electronics SCHOTTKY DIODES MODULE TYPE 600A Original PDF
    MBR60035CTR America Semiconductor MBR60035 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Scan PDF
    MBR60035CTRL GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 35V 300A 2 TOWER Original PDF

    MBR60035CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR60035CT R L Low VF Silicon Power Schottky Diode VRRM = 35 V IF(AV) = 600 A Features • High Surge Capability • Type 35 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR60035CT

    MBR60035CT(R)L

    Abstract: No abstract text available
    Text: DACO SEMICONDUCTOR CO., LTD. MBR60035CT R L LOW VF SCHOTTKY DIODE MODULE TYPE 600A Features 600Amp Rectifier 35Volts High Surge Capability TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 R B Part Number MBR60035CT(R)L


    Original     		PDF MBR60035CT 600Amp 35Volts MBR60035CT(R)L

    Untitled

    Abstract: No abstract text available
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    Untitled

    Abstract: No abstract text available
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 600 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR60020CT MBR60040CTR MBR60030CT MBR60035CT MBR60040CT

    Untitled

    Abstract: No abstract text available
    Text: MB R 60020C T R DACO SEMICONDUCTOR CO., LTD. MB R 600100CT(R ) T HRU SCHOTTKY DIODE MODULE TYPES 600A Features 600Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150


    Original     		PDF 60020C 600100CT 600Amp MBR60020CT MBR60030CT MBR60035CT MBR60045CT MBR60060CT MBR60040CT MBR60080CT

    MBR60020CT

    Abstract: MBR60030CT MBR60035CT MBR60040CT 600600A
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT MBR60030CT MBR60035CT MBR60040CT 600600A

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    MBR600100CT

    Abstract: MBR60020CT MBR60030CT MBR60035CT MBR60040CT MBR60045CT MBR60080CT
    Text: MCC MBR60020CT THRU MBR600100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 600 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR60020CT MBR600100CT MBR60030CT MBR60035CT MBR60040CT MBR60045CT MBR60060CT MBR60080CT MBR600100CT MBR60020CT MBR60030CT MBR60035CT MBR60040CT MBR60045CT MBR60080CT

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MBR60060CT

    Abstract: MBR60020CT
    Text: MCC MBR60020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR600100CT Features • • • • 600 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		PDF MBR60020CT MBR600100CT MBR60030CT MBR60035CT MBR60040CT MBR60045CT MBR60060CT MBR60080CT MBR60060CT MBR60020CT

    MBR60020CT

    Abstract: MBR60030CT MBR60035CT MBR60040CT MBR60045CT
    Text: Transys MBR60020CT R THRU MBR60045CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 600A Features High Surge Capability 600Amp Rectifier 20-45 Volts Types Up to 45V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original     		PDF MBR60020CT MBR60045CT 600Amp MBR60040CT MBR60035CT MBR60030CT

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    MBR600100CT

    Abstract: mcc40
    Text: MCC 4 0 0 AM PERE S C H O T T K Y I FU LL PAC K _ MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT 20 30 35 40 45 60 80 too 400 400 400 400 400 400 400 400 125 125 125 125 125 125 125 125


    OCR Scan     		PDF MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT MBR50020CT MBR50030CT MBR600100CT mcc40

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR! bME 3 TECHNICAL DATA • b 3 b ? 2S 5 Q 0 ñ b 37 ñ ObT « M O T ? MO TO ROL A SC CD I O D E S / O P T O ) Product Preview M BR60035CTL POWERTAP Package M o to ro la P re fe rre d D e v ic e SWITCHMODE™ Pow er R ectifier LOW VF


    OCR Scan     		PDF BR60035CTL

    MBR60035CTL

    Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL
    Text: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL


    OCR Scan     		PDF GGfl30D4 MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR30035CT MBR60030CTL MBR60035CTL MBR30045CT MBR30050CT