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    MBRA120ET3G Search Results

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    MBRA120ET3G Price and Stock

    onsemi MBRA120ET3G

    Diode Schottky 20V 1A 2-Pin SMA T/R - Tape and Reel (Alt: MBRA120ET3G)
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    Avnet Americas MBRA120ET3G Reel 9 Weeks 10,000
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    Mouser Electronics MBRA120ET3G 132,515
    • 1 $0.44
    • 10 $0.341
    • 100 $0.205
    • 1000 $0.119
    • 10000 $0.097
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    Newark MBRA120ET3G Cut Tape 1,551 5
    • 1 $0.477
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    • 1000 $0.154
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    MBRA120ET3G Cut Tape 5,000
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    MBRA120ET3G Reel 5,000
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    Future Electronics MBRA120ET3G Reel 9 Weeks 10,000
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    MBRA120ET3G Reel 9 Weeks 10,000
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    Onlinecomponents.com MBRA120ET3G
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    Bristol Electronics MBRA120ET3G 1,105
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    Richardson RFPD MBRA120ET3G 10,000
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    Avnet Asia MBRA120ET3G 9 Weeks 10,000
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    Avnet Silica MBRA120ET3G 10 Weeks 5,000
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    Chip1Stop MBRA120ET3G 25,000
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    MBRA120ET3G 10,000
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    • 10 $0.314
    • 100 $0.1868
    • 1000 $0.1062
    • 10000 $0.0891
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    MBRA120ET3G 9,800
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    • 10 $0.4244
    • 100 $0.4212
    • 1000 $0.4165
    • 10000 $0.4133
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    EBV Elektronik MBRA120ET3G 5,000 11 Weeks 5,000
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    New Advantage Corporation MBRA120ET3G 5,000 1
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    Win Source Electronics MBRA120ET3G 88,786
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    • 10000 $0.245
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    Wuhan P&S MBRA120ET3G 25,000 1
    • 1 $0.2622
    • 10 $0.2622
    • 100 $0.1674
    • 1000 $0.1269
    • 10000 $0.1269
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    Others MBRA120ET3G

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    Chip 1 Exchange MBRA120ET3G 39,000
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    MBRA120ET3G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRA120ET3G EIC Semiconductor Schottky Barrier Diodes Original PDF
    MBRA120ET3G On Semiconductor 1A 20V Low Leakage Schottky Rectifier Original PDF

    MBRA120ET3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRA120ET3G

    Abstract: No abstract text available
    Text: TH97/10561QM MBRA120ET3G TW00/17276EM IATF 0060636 SGS TH07/1033 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 20 Volts Io : 1.0 Ampere SMA 5.3 ± 0.35 FEATURES : * Highly Stable Oxidation Passivated Junction * Guardring for Over - Voltage Protection * Optimized for Low Leakage Current


    Original
    PDF TH97/10561QM MBRA120ET3G TW00/17276EM TH07/1033 UL94V-O MBRA120ET3G

    SMA CASE 403D-02 footprint

    Abstract: No abstract text available
    Text: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF MBRA120ET3G MBRA120ET3/D SMA CASE 403D-02 footprint

    Untitled

    Abstract: No abstract text available
    Text: Certificate TH97/10561QM MBRA120ET3G Certificate TW00/17276EM SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 20 Volts Io : 1.0 Ampere SMA 5.4 ± 0.2 * Highly Stable Oxidation Passivated Junction * Guardring for Over - Voltage Protection * Optimized for Low Leakage Current


    Original
    PDF TH97/10561QM MBRA120ET3G TW00/17276EM UL94V-O

    Untitled

    Abstract: No abstract text available
    Text: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF MBRA120ET3G MBRA120ET3/D

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Jamicon capacitor

    Abstract: SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709
    Text: Freescale Semiconductor User’s Guide KIT33927EKEVBE Evaluation Board User’s Guide Freescale Semiconductor, Inc., 2007-2008. All rights reserved. KT33927UG Rev 2.0, 3/2008 Important Notice Important Notice Freescale provides the enclosed product s under the following conditions:


    Original
    PDF KIT33927EKEVBE KT33927UG Jamicon capacitor SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SBOU078 – June 2009 PGA2505EVM This document provides the information needed to set up and operate the PGA2505EVM evaluation module EVM and accompanying software. For a detailed description of the PGA2505 device, please refer to the product data sheet available from the Texas Instruments web site at www.ti.com. Additional


    Original
    PDF SBOU078 PGA2505EVM PGA2505EVM PGA2505

    J200 mosfet

    Abstract: Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A KIT33937AEKEVBE Jamicon 47uf miniature 2.1mm DC power jack connector
    Text: Freescale Semiconductor User’s Guide KT33937AUG Rev 1.0, 10/2009 KIT33937AEKEVBE Evaluation Board User’s Guide Freescale Semiconductor, Inc., 2009. All rights reserved. Important Notice Important Notice Freescale provides the enclosed product s under the following conditions:


    Original
    PDF KT33937AUG KIT33937AEKEVBE J200 mosfet Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A Jamicon 47uf miniature 2.1mm DC power jack connector

    Untitled

    Abstract: No abstract text available
    Text: MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF MBRA120E, NRVBA120E MBRA120ET3/D